Abstract: The present invention provides novel use of Bifidobacterium lactis BL-99 in suppression of intestinal inflammation. Bifidobacterium lactis BL-99 of the present invention has the deposit number CGMCC 15650. It was discovered in the present invention that the strain alone was highly efficacious at suppressing intestinal inflammation, reducing inflammatory factors IL-6 and/or TNF-?, promoting anti-inflammatory factor IL-10, and reducing the tissue damage of colitis.

Abstract: A Bifidobacterium lactis BL-99 strain capable of enhancing immunity and the use thereof, which belongs to the technical field of microorganisms, is described. The Bifidobacterium lactis BL-99 provided by the present invention is deposited in China General Microbiological Culture Collection Center CGMCC on Apr. 26, 2018 with the deposit number CGMCC No. 15650. The bacteria have gastric acid resistance and intestinal fluid resistance, can significantly promote the growth of Bifidobacterium and Lactobacillus, significantly increase antibody-producing cells and half hemolysis value HC50, activate NK cell activity, and can be used to prepare foods for immunity enhancement. It also has the effects in preventing osteoporosis, increasing blood calcium and/or phosphorus ions, which has a wide range of application prospects.

Abstract: A Bifidobacterium lactis BL-99 strain capable of enhancing immunity and the use thereof, which belongs to the technical field of microorganisms, is described. The Bifidobacterium lactis BL-99 provided by the present invention is deposited in China General Microbiological Culture Collection Center CGMCC on Apr. 26, 2018 with the deposit number CGMCC No. 15650. The bacteria have gastric acid resistance and intestinal fluid resistance, can significantly promote the growth of Bifidobacterium and Lactobacillus, significantly increase antibody-producing cells and half hemolysis value HC50, activate NK cell activity, and can be used to prepare foods for immunity enhancement. It also has the effects in preventing osteoporosis, increasing blood calcium and/or phosphorus ions, which has a wide range of application prospects.

Abstract: Semiconductor structures and methods for forming the same are provided. The method includes forming a dummy gate structure over a substrate and forming a sealing layer surrounding the dummy gate structure. The method includes forming a spacer covering the sealing layer and removing the dummy gate structure to form a trench. The method further includes forming an interfacial layer and a gate dielectric layer. The method further includes forming a capping layer over the gate dielectric layer and partially oxidizing the capping layer to form a capping oxide layer. The method further includes forming a work function metal layer over the capping oxide layer and forming a gate electrode layer over the work function metal layer. In addition, a bottom surface of the capping oxide layer is higher than a bottom surface of the spacer.

Abstract: Semiconductor structures and method for forming the same are provided. The method for manufacturing the semiconductor structure includes forming a first gate dielectric layer over a substrate and forming a first capping layer over the first gate dielectric layer. The method for manufacturing the semiconductor structure includes oxidizing the first capping layer to form a first capping oxide layer and forming a first work function metal layer over the first capping oxide layer. The method for manufacturing the semiconductor structure includes forming a first gate electrode layer over the first work function metal layer.

Abstract: A Bifidobacterium lactis BL-99 strain capable of enhancing immunity and the use thereof, which belongs to the technical field of microorganisms, is described. The Bifidobacterium lactis BL-99 provided by the present invention is deposited in China General Microbiological Culture Collection Center CGMCC on Apr. 26, 2018 with the deposit number CGMCC No. 15650. The bacteria have gastric acid resistance and intestinal fluid resistance, can significantly promote the growth of Bifidobacterium and Lactobacillus, significantly increase antibody-producing cells and half hemolysis value HC50, activate NK cell activity, and can be used to prepare foods for immunity enhancement. It also has the effects in preventing osteoporosis, increasing blood calcium and/or phosphorus ions, which has a wide range of application prospects.

Abstract: The present application relates to a Lactobacillus paracasei ET-22 strain and use thereof. The present application provides a Lactobacillus paracasei ET-22 strain with a deposit number of CGMCC No. 15077, a composition containing the strain and a method of treating a subject using the strain. The present application also relates to a method for treating a subject, including administering an effective amount of the Lactobacillus paracasei ET-22 strain to a subject in need thereof for 1) whitening teeth and/or inhibiting oral pathogens; 2) adjusting balance of flora in the subject; 3) promoting growth of bifidobacteria and/or lactic acid bacteria; and/or 4) enhancing immunity of the subject.

Abstract: A protective device and a protective method for insulating and buffering an electronic product against the vibration, humidity, heat, and chemicals found in outdoor agricultural machines and thus safeguarding and extending the service life of the electronic products includes a protection space in the device, the electronic products being protected by being suspended in the protection space of the protection device.

Abstract: The present application relates to a Lactobacillus paracasei ET-22 strain and use thereof. The present application provides a Lactobacillus paracasei ET-22 strain with a deposit number of CGMCC No. 15077, a composition containing the strain and a method of treating a subject using the strain. The present application also relates to a method for treating a subject, including administering an effective amount of the Lactobacillus paracasei ET-22 strain to a subject in need thereof for 1) whitening teeth and/or inhibiting oral pathogens; 2) adjusting balance of flora in the subject; 3) promoting growth of bifidobacteria and/or lactic acid bacteria; and/or 4) enhancing immunity of the subject.

Abstract: A Bifidobacterium lactis BL-99 strain capable of enhancing immunity and the use thereof, which belongs to the technical field of microorganisms, is described. The Bifidobacterium lactis BL-99 provided by the present invention is deposited in China General Microbiological Culture Collection Center CGMCC on Apr. 26, 2018 with the deposit number CGMCC No. 15650. The bacteria have gastric acid resistance and intestinal fluid resistance, can significantly promote the growth of Bifidobacterium and Lactobacillus, significantly increase antibody-producing cells and half hemolysis value HC50, activate NK cell activity, and can be used to prepare foods for immunity enhancement. It also has the effects in preventing osteoporosis, increasing blood calcium and/or phosphorus ions, which has a wide range of application prospects.

Abstract: A new use of Lactobacillus paracasei subsp. paracasei K56 capable of regulating the gastrointestinal flora balance is described. The deposit number of the Lactobacillus paracasei subsp. paracasei is DSM27447. This strain alone has the ability to significantly promote the growth of intestinal Bifidobacterium and Lactobacillus, suppress Desulfovibrio and/or Enterobacteria in the intestine, suppress Helicobacter and/or Escherichia-Shigella, and can endure a simulated in vitro gastrointestinal fluid stress environment. Experiments in mice show that this strain has no acute oral toxicity, no antibiotic resistance, and may be safely used in food processing.

Abstract: Semiconductor structures and method for forming the same are provided. The method for manufacturing the semiconductor structure includes forming a first gate dielectric layer over a substrate and forming a first capping layer over the first gate dielectric layer. The method for manufacturing the semiconductor structure includes oxidizing the first capping layer to form a first capping oxide layer and forming a first work function metal layer over the first capping oxide layer. The method for manufacturing the semiconductor structure includes forming a first gate electrode layer over the first work function metal layer.

Abstract: Methods for forming a semiconductor structure are provided. The method includes forming a first dummy gate structure and forming first spacers over a sidewall of the first dummy gate structure. The method includes removing the first dummy gate structure to form a first trench between the first spacers and forming a first capping layer in the first trench. A first portion of the first capping layer covers a sidewall of the first trench and a second portion of the first capping layer covers a bottom surface of the first trench. The method further includes oxidizing a sidewall of the first portion of the first capping layer and a top surface of the second portion of the first capping layer to form a first capping oxide layer and forming a first work function metal layer and forming a first gate electrode layer over the first work function metal layer.

Abstract: An airplane wing assembly includes a wing, a winglet and a connection element. The wing has a wing box. The wing box is located at a wing tip of the wing and the winglet is connected with the wing by the wing box. The connection element includes a butt joint rib, which is assembled with the wing box, and a center connection, which is assembled with the winglet. The butt joint rib has a first shearing pin hole and a second shearing pin hole, into which are press fitted a corresponding first and a second shearing pin respectively to form interference fit. The center connector has a first sleeve hole and a second sleeve hole.

Abstract: Methods for forming a semiconductor structure are provided. The method includes forming a first dummy gate structure and forming first spacers over a sidewall of the first dummy gate structure. The method includes removing the first dummy gate structure to form a first trench between the first spacers and forming a first capping layer in the first trench. A first portion of the first capping layer covers a sidewall of the first trench and a second portion of the first capping layer covers a bottom surface of the first trench. The method further includes oxidizing a sidewall of the first portion of the first capping layer and a top surface of the second portion of the first capping layer to form a first capping oxide layer and forming a first work function metal layer and forming a first gate electrode layer over the first work function metal layer.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The gate structure includes a gate dielectric layer formed over the substrate and a capping layer formed over the gate dielectric layer. The gate structure further includes a capping oxide layer formed over the capping layer and a work function metal layer formed over the capping oxide layer. The gate structure further includes a gate electrode layer formed over the work function metal layer.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate, an interfacial layer formed over the substrate, and an insertion layer formed over the interfacial layer. The semiconductor structure further includes a gate dielectric layer formed over the insertion layer and a gate structure formed over the gate dielectric layer. The insertion layer and the gate dielectric layer may be metal oxides where the insertion layer has an oxygen coordination number greater than the gate dielectric layer.

Abstract: A water softener valve mechanism includes a body provided with a first inlet, a first outlet and a first discharge. The body has a static valve plate provided with a first passage, a second passage, a third passage, a fourth passage, a fifth passage and a sixth passage and a second discharge and a dynamic plate rotatable relative to the static plate and having an elongated recess defined in a side face of the dynamic plate and a third inlet in communication with the first inlet of the body and to selectively communicate with the first passage, the second passage, the third passage, the fourth passage, the fifth passage and the sixth passage, and a driving device mounted inside the body to drive the dynamic valve plate to rotate.

Abstract: A water softener valve mechanism includes a body provided with a main inlet, a main outlet and a discharge. The body has a static valve plate provided with a first passage, a second passage, a third passage, a fourth passage, a blind fifth passage, a sixth passage and a seventh passage and a dynamic plate rotatable relative to the static plate and having an elongated blind hole defined in a side face of the dynamic plate and an aligning hole to selectively communicate with the first passage, the second passage, the third passage and the fourth passage and a driving device mounted inside the body to drive the dynamic valve plate to rotate.

Abstract: A water purification valve mechanism includes a body provided with a static valve plate having therein a first passage, a second passage, a third passage, a fourth closed passage, a fifth passage, a sixth closed passage and a seventh passage respectively and radially defined through a surface of the static valve plate and a dynamic valve plate rotatably provided on top of the static valve plate, wherein the second passage, the third passage, the fourth passage, the fifth passage, the sixth passage and the seventh passage are divergently defined around the first passage; and a driving device mounted inside the body to drive the dynamic valve plate to rotate.