Abstract: A thin film transistor includes a gate electrode embedded in an insulating layer that overlies a substrate, a gate dielectric overlying the gate electrode, an active layer comprising a compound semiconductor material and overlying the gate dielectric, and a source electrode and drain electrode contacting end portions of the active layer. The gate dielectric may have thicker portions over interfaces with the insulating layer to suppress hydrogen diffusion therethrough. Additionally or alternatively, a passivation capping dielectric including a dielectric metal oxide material may be interposed between the active layer and a dielectric layer overlying the active layer to suppress hydrogen diffusion therethrough.

Abstract: A method for generating and outputting a message is implemented using an electronic device the stores a computer program product and a text database. The text database includes a main message template, a template text that includes a placeholder, and a word group that includes a plurality of preset words for replacing the placeholder. The method includes: in response to receipt of a command for execution of the computer program product, displaying an editing interface including the main message template; in response to receipt of user operation of a selection of the main message template, displaying the template text; in response to receipt of user operation of a selection of one of the preset words via the user interface, generating an edited text by replacing the placeholder with the one of the preset words in the template text; and outputting the edited text as a message.

Abstract: An electronic device has sensors. More particularly, the electronic device is a small form factor electronic device such as earbuds, styluses, or electronic pencils, earphones, and so on. In some implementations, one or more touch sensors and one or more force sensors are coupled to a flexible circuit. In various implementations, the touch sensor and the force sensor are part of a single module controlled by a single controller. In a number of implementations, the flexible circuit is laminated to one or more portions of an interior surface of the electronic device.

Abstract: A memory device and method of making the same are disclosed. The memory device includes transistor devices located in both a memory region and a logic region of the device. Transistor devices in the memory region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, a second oxide layer over the first nitride layer, and a second nitride layer over the second oxide layer. Transistor devices in the logic region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, and a second nitride layer over the first nitride layer.

Abstract: A true wireless multichannel-speakers device and a multiple sound-source voicing method thereof are disclosed. The true wireless multichannel-speakers device includes a first and a second sounder. The first and the second sounders respectively include a first and a second sound effect generators, a first and a second sound effect value providers, and a first and a second speakers. The first sound effect value provider provides a first sound effect control value set to the first sound effect generator to generate a first sound effect output signal so that the first speaker outputs the first sound effect output signal. The second sound effect value provider provides a second sound effect control value set to the second sound effect generator to generate a second sound effect output signal so that the second speaker outputs the second sound effect output signal.

Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.

Abstract: A memory device and method of making the same are disclosed. The memory device includes transistor devices located in both a memory region and a logic region of the device. Transistor devices in the memory region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, a second oxide layer over the first nitride layer, and a second nitride layer over the second oxide layer. Transistor devices in the logic region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, and a second nitride layer over the first nitride layer.

Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.

Abstract: A method includes: forming a masking layer on a backside of a substrate, the substrate including pixel regions having photodetectors, transistors being positioned on or in a frontside of the substrate; forming a mask opening in the masking layer by exposing the masking layer to patterned light, the opening including: mask pixel regions that mask the pixel regions; and mask protrusion regions that extend from the mask pixel regions toward a mask crossroad region; forming a substrate opening in the substrate by etching the substrate through the mask opening; and forming an isolation structure in the substrate opening.

Abstract: A wafer having a first region and a second region is provided. A first topography variation exists between the first region and the second region. A first layer is formed over the first region and over the second region of the wafer. The first layer is patterned. A patterned first layer causes a second topography variation to exist between the first region and the second region. The second topography variation is smoother than the first topography variation. A second layer is formed over the first region and the second region. At least a portion of the second layer is formed over the patterned first layer.

Abstract: A memory device and method of making the same are disclosed. The memory device includes transistor devices located in both a memory region and a logic region of the device. Transistor devices in the memory region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, a second oxide layer over the first nitride layer, and a second nitride layer over the second oxide layer. Transistor devices in the logic region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, and a second nitride layer over the first nitride layer.

Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.

Abstract: A sound adjustment method is disclosed. The sound adjustment method includes the following the steps: receiving a sound adjustment command; receiving a right channel sound signal and a left channel sound signal; selecting a corresponding adjustment mode according to the sound adjustment command and processing the right channel sound signal and the left channel sound signal based on the adjustment mode to generate a right channel first sound signal and a left channel first sound signal, wherein different adjustment modes have different intensity adjustment levels; shifting the frequency of the right channel first sound signal by X Hz to generate a right channel second sound signal and shifting the frequency of the left channel first sound signal by Y Hz to generate a left channel second sound signal, wherein 0.5?|X?Y|?100; outputting the right channel second sound signal and the left channel second sound signal.

Abstract: A wafer having a first region and a second region is provided. A first topography variation exists between the first region and the second region. A first layer is formed over the first region and over the second region of the wafer. The first layer is patterned. A patterned first layer causes a second topography variation to exist between the first region and the second region. The second topography variation is smoother than the first topography variation. A second layer is formed over the first region and the second region. At least a portion of the second layer is formed over the patterned first layer.

Abstract: A method for inducing brain waves by sound has the following steps: receiving a first channel input signal and a second channel input signal; adjusting a volume gain of the first channel input signal to form a first channel output signal, wherein a format of the volume gain of the first channel output signal is a first wave format; adjusting a volume gain of the second channel input signal to form a second channel output signal, wherein a format of the volume gain of the second channel output signal is a second wave format, wherein there is a phase difference between the first wave format and the second wave format, wherein the formats of the first wave format and the second wave format are the same; outputting the first channel output signal to a first speaker; and outputting the second channel output signal to a second speaker.

Abstract: A wafer having a first region and a second region is provided. A first topography variation exists between the first region and the second region. A first layer is formed over the first region and over the second region of the wafer. The first layer is patterned. A patterned first layer causes a second topography variation to exist between the first region and the second region. The second topography variation is smoother than the first topography variation. A second layer is formed over the first region and the second region. At least a portion of the second layer is formed over the patterned first layer.

Abstract: A true wireless multichannel-speakers device and a multiple sound-source voicing method thereof are disclosed. The true wireless multichannel-speakers device includes a first and a second sounder. The first and the second sounders respectively include a first and a second sound effect generators, a first and a second sound effect value providers, and a first and a second speakers. The first sound effect value provider provides a first sound effect control value set to the first sound effect generator to generate a first sound effect output signal so that the first speaker outputs the first sound effect output signal. The second sound effect value provider provides a second sound effect control value set to the second sound effect generator to generate a second sound effect output signal so that the second speaker outputs the second sound effect output signal.

Abstract: A method for inducing brain waves by sound has the following steps: receiving a first channel input signal and a second channel input signal; adjusting a volume gain of the first channel input signal to form a first channel output signal, wherein a format of the volume gain of the first channel output signal is a first wave format; adjusting a volume gain of the second channel input signal to form a second channel output signal, wherein a format of the volume gain of the second channel output signal is a second wave format, wherein there is a phase difference between the first wave format and the second wave format, wherein the formats of the first wave format and the second wave format are the same; outputting the first channel output signal to a first speaker; and outputting the second channel output signal to a second speaker.

Abstract: An electronic device and an equalizer adjustment method thereof for adjusting gain settings of an equalizer according to the volume of the output signal are disclosed. The method includes the steps of: setting a volume gain value table including a plurality of volume values through a gain value setting module, which are a first volume value to an Nth volume value with volume incrementally increasing, each of the plurality of volume values including a set of correction parameters which including a plurality of compensation gain values corresponding to a plurality of target frequencies, respectively; storing the volume gain value table in a storage module; obtaining a volume of the output signal; loading the volume gain value table according to the volume of the output signal to obtain the corresponding set of correction parameters; and adjusting gain value settings of an equalizer for different frequencies of sound.

Abstract: A sound adjustment method includes the following steps: obtaining a sound signal including frequency bands with a corresponding original sound pressure level value; converting the original sound pressure level value of each frequency band into a corresponding loudness level value; adjusting each loudness level value by a preset loudness level value to obtain an adjusted loudness level value of each frequency band; converting each adjusted loudness level value into a corresponding adjusted sound pressure level value; calculating a target sound pressure level value of each frequency band according to the original sound pressure level of each frequency band and each adjusted sound pressure level value; adjusting the original sound pressure level value of each frequency band by each target sound pressure level value to obtain an adjusted sound signal; outputting the adjusted sound signal.