Abstract: A sensing system on chip (SOC) is disclosed. The sensing system on chip (SOC) includes a substrate, a humidity sensing unit, an air pressure sensing unit and a gas sensing unit. The substrate has a plane. The humidity sensing unit is formed on the substrate. The air pressure sensing unit is formed on the substrate. The gas sensing unit is formed on the substrate, wherein the humidity sensing unit, the air pressure sensing unit and the gas sensing unit are all arranged on the plane.

Abstract: The disclosure provides an in-memory computing (IMC) memory device and an IMC method thereof. The IMC memory device includes; a memory array including a plurality of computing units, each of the computing units including a plurality of parallel-coupling computing cells, the parallel-coupling computing cells of the same computing unit receiving a same input voltage; wherein a plurality of input data is converted into a plurality input voltages; after receiving the input voltages, the computing units generate a plurality of output currents; and based on the output currents, a multiply accumulate (MAC) of the input data and a plurality of conductance of the computing cells is generated.

Abstract: A method for enhancing learning and memory or treating amnesia. The method includes administrating to a subject in need thereof a compound of the formula (I): A is H, R, or ?each of Ar1, Ar2, and Ar3, independently, is phenyl, thienyl, furyl, or pyrrolyl; each of R1, R2, R3, R4, R5, and R6, independently, is H, nitro, halogen, R, OH, OR, C(O)OH, C(O)OR, C(O)SH, C(O)SR, C(O)NH2, C(O)NHR, C(O)NRR?, ROH, ROR?, RSH, RSR?, ROC(O)R?OH, NHR, NRR?, RNHR?, or RNR?R?; or R1 and R2 together, R3 and R4 together, or R5 and R6 together are ORO; wherein each of R, R?, and R?, independently is C1˜C6 alkyl; and n is 1, 2, or 3. The compound is in an effective amount for enhancing learning and memory or treating amnesia.

Abstract: A method for enhancing learning and memory or treating amnesia.