Patents by Inventor Wei-Ling SEAH

Wei-Ling SEAH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10276815
    Abstract: This invention provides a transistor device structure that incorporates a self-aligned doped contact formed by inserting a molecularly-thin layer of bonded anions between the semiconductor and the source-drain electrode array wherein the semiconductor is p-doped at the interface with the bonded-anion layer, and a method of making this structure using oxidant species incorporated into the molecularly-thin layer. The device shows ohmic hole injection and hole extraction at the contacts to give high-performance transistor characteristics with low contact resistance.
    Type: Grant
    Filed: February 1, 2016
    Date of Patent: April 30, 2019
    Assignees: BASF SE, National University of Singapore
    Inventors: Mi Zhou, Peter K.-H. Ho, Lay-Lay Chua, Png Rui-Qi, Wei-Ling Seah
  • Publication number: 20180026215
    Abstract: This invention provides a transistor device structure that in-corporates a self-aligned doped contact formed by inserting a molecularly-thin layer of bonded anions between the semiconductor and the source-drain electrode array wherein the semiconductor is p-doped at the interface with the bonded-anion layer, and a method of making this structure using oxidant species incorporated into the molecularly-thin layer. The device shows ohmic hole injection and hole extraction at the contacts to give high-performance transistor characteristics with low contact resistance.
    Type: Application
    Filed: February 1, 2016
    Publication date: January 25, 2018
    Applicants: BASF SE, National University of Singapore
    Inventors: Mi ZHOU, Peter K.-H. HO, Lay-Lay CHUA, Png RUI-QI, Wei-Ling SEAH