Abstract: The present disclosure discloses a gene sequencing reaction device, a gene sequencing system and a gene sequencing reaction method. The gene sequencing reaction device includes: a supporting platform (8); a dipping container disposed on the supporting platform (8), wherein the dipping container has a dipping reaction area, and the dipping reaction area is configured to hold a chemical reagent for gene sequencing reaction, so as to dip a sequencing chip (2) having a DNA sample loading structure on the surface and having a DNA sample loaded thereon in the chemical reagent to perform a gene sequencing reaction; a temperature control apparatus, configured to control the temperature of the chemical reagent in the dipping reaction area; and a transfer apparatus, configured to insert the sequencing chip (2) into the dipping reaction area or pull out the sequencing chip from the dipping reaction area.

Abstract: Provided are an uplink data transmission method, device and system. The uplink data transmission method includes: determining whether a number of times a terminal transmitting uplink transmission data is greater than or equal to a predetermined threshold; and transmitting, in a case where the number is greater than or equal to the predetermined threshold, to a network side apparatus, an establishment request to establish a wireless connection or a resume request to resume the wireless connection. Further provided is a computer storage medium.

Abstract: Disclosed are a method, an apparatus, and a device for reducing interference from coexistence of multiple radio technologies. The method includes: a terminal sets up an uplink scheduling request SR message carrying in-device coexistence IDC information, the IDC information being configured for a network side to allocate an uplink resource to the terminal; and the terminal transmits the SR message.

Abstract: A method includes forming a first region including a pair of first FinFETs and a second region including a pair of second FinFETs on a substrate. Each FinFET includes a metal gate having a first spacer adjacent thereto, and each first FinFET has a gate dielectric that is thicker than a gate dielectric of each second FinFET, such that the first FinFETs can be higher voltage input/output devices. The method forms a first contact between the metal gates of the pair of first FinFETs with a second spacer thereabout, the second spacer contacting a portion of each first spacer. The second spacer thus has a portion extending parallel to the metal gates, and a portion extending perpendicular to the metal gates. A second contact is formed between the metal gates of the pair of second FinFETs, and the second contact devoid of the second spacer.

Abstract: The present disclosure relates to an operating table, the operating table comprising a table top, a table top support and a column with a column head, wherein the sealing device is bellows assembled below the column head, or an adhesive in a hole and/or window on the holder of the cable, or a sealing gasket between the receiver and the column head, or a shield sealingly attached to the column head below the gear. The present disclosure further relates to control equipment, a lifting device, an intelligent charger, a column guide system for an operating table, as well as an operating table including the same.

Abstract: A FinFET device is provided, which includes a semiconductor substrate, a fin structure and a dielectric material. The fin structure is extending from the semiconductor substrate, the fin structure having an upper fin section, a middle fin section and a lower fin section. The dielectric material is over the semiconductor substrate embedding a first portion of the lower fin section. The dielectric material forms shallow trench isolation regions of the FinFET device.

Abstract: Provided is a classification optimization method for steel grade family of a steel rolling model, including: step 1: calculating the deformation rate and deformation resistance of a rolled piece according to rolling process data; step 2: reversing the “equivalently measured” deformation resistance according to the measured roll force; step 3: drawing a scatter plot of data on a graph, and judging whether layer division is reasonable according to distribution characteristics; and step 4: for the unreasonable division of steel grade family, optimizing the existing classification of steel grade family using a new algorithm called line clustering, determining steel grade codes that need to be divided into new family, searching for the shortest distance from a sample point to the curve of each cluster centre based on a Nelder-Mead algorithm, dividing all data points into k subsets according to the principle of proximity, fitting a power curve to each data subset using a least square method, repeating the above ste

Abstract: A hybridoma cell strain secreting a nifursol residue marker monoclonal antibody prepared in the following way: BALB/c mice are subjected to the first immunization with a complete Freund's adjuvant, subjected to booster immunization with an incomplete Freund's adjuvant for four times, and subjected to rush immunization once with nifursol residue marker complete antigen without a Freund's adjuvant so that the BALB/c mice are immunized; the spleen cells of the immunized mice with high titer and low IC50 were fused with mouse myeloma cells by a PEG method, and the fused cells are screened through indirect competitive ELISA and subcloned three times. The monoclonal antibody secreted by this cell strain has good specificity and detection sensitivity (IC50 value of 2 ?g/L) to the nifursol residue marker and can be used for residue detection of the nifursol residual marker in food.

Abstract: A coating apparatus includes a process chamber, a rotation device, and a rotation holder. The rotation device is disposed in the process chamber. The rotation holder is connected to the rotation device. The rotation holder includes two extension elements, two retaining elements, and two pins. The two extension elements are disposed around a center axis and separated from each other, wherein each of the two extension elements has a side surface. Each of the two retaining elements has a bottom surface, one of the two retaining elements is connected to one of the side surfaces, and the other of the two retaining elements is connected to the other of the side surfaces. One of the two pins is connected to one of the bottom surfaces, and the other of the two pins is connected to the other of the bottom surfaces.

Abstract: This application provides a fingerprint collection apparatus. According to the fingerprint collection method and the related apparatus that are provided in this application, a sensor array is divided into a plurality of areas in terms of a column based on a quantity of input ports of an analog front end component and a quantity of columns of the sensor array, and sensor units in different areas multiplex input channels of the analog front end component by using switches. In this way, when scanning row scanning lines in the sensor array, a row scanning circuit may control the switches to output, to the analog front end component in a time division manner, original fingerprint data collected by the sensor units in the different areas, so that fewer input channels of the analog front end component can be required, and a size of a fingerprint collection apparatus can be reduced.

Abstract: Disclosed is a metal gate (e.g., a replacement metal gate (RMG) for a field effect transistor (FET) and a method of forming the metal gate. The method includes depositing a conformal dielectric layer to line a gate opening and performing a series of unclustered and clustered conformal metal deposition and chamfer processes to selectively adjust the heights of conformal metal layers within the gate opening. By selectively controlling the heights of the conformal metal layers, the method provides improved overall gate height control and gate quality particularly when the metal gate has a small critical dimension (CD) and/or a high aspect ratio (AR). The method can also include using different etch techniques during the different chamfer processes and, particularly, when different materials and/or different material interfaces are exposed to an etchant in order to ensure an essentially uniform etch rate of the conformal metal layer(s) at issue in a direction that is essentially vertical.

Abstract: A hybridoma cell strain secreting a nifursol residue marker monoclonal antibody prepared in the following way: BALB/c mice are subjected to the first immunization with a complete Freund's adjuvant, subjected to booster immunization with an incomplete Freund's adjuvant for four times, and subjected to rush immunization once with nifursol residue marker complete antigen without a Freund's adjuvant so that the BALB/c mice are immunized; the spleen cells of the immunized mice with high titer and low IC50 were fused with mouse myeloma cells by a PEG method, and the fused cells are screened through indirect competitive ELISA and subcloned three times. The monoclonal antibody secreted by this cell strain has good specificity and detection sensitivity (IC50 value of 2 ?g/L) to the nifursol residue marker and can be used for residue detection of the nifursol residual marker in food.

Abstract: Disclosed is a metal gate (e.g., a replacement metal gate (RMG) for a field effect transistor (FET) and a method of forming the metal gate. The method includes depositing a conformal dielectric layer to line a gate opening and performing a series of unclustered and clustered conformal metal deposition and chamfer processes to selectively adjust the heights of conformal metal layers within the gate opening. By selectively controlling the heights of the conformal metal layers, the method provides improved overall gate height control and gate quality particularly when the metal gate has a small critical dimension (CD) and/or a high aspect ratio (AR). The method can also include using different etch techniques during the different chamfer processes and, particularly, when different materials and/or different material interfaces are exposed to an etchant in order to ensure an essentially uniform etch rate of the conformal metal layer(s) at issue in a direction that is essentially vertical.

Abstract: A method and a system for active alignment of a light source assembly along three dimensions in an optical bench plane are provided. The light source assembly, preferably a laser diode on its sub-mount, is actively aligned in three dimensions, longitudinal, transection and vertical along the optical bench. The light source assembly is attached on edge of the optical bench, via adhesion processes, such as solder welding. Optical components such as collimator lens, isolator, etc are first passively aligned on the optical bench using alignment marks and epoxy slots provided on the surface of the optical bench. Then, laser diode, mounted on a laser diode sub-mount, is aligned in X and Z direction. Thereafter, the light source assembly is pushed towards the edge of the optical bench and attached with the edge via a solder joint. Also, a compensator can be actively aligned until the optimum light intensity achieved.

Abstract: The present disclosure discloses a lincosamides universal monoclonal antibody hybridoma cell strain and application thereof, and belongs to the technical field of food safety immunological detection. According to the present disclosure, a clindamycin chlorine-substituted derivative is used as a hapten, the hapten is coupled with bovine serum albumin (BSA) by an activated ester method to obtain an immunizing antigen, and after being uniformly mixed with a Freund's adjuvant, the immunizing antigen is subcutaneously injected to immunize BALB/c mice; clindamycin is coupled with ovalbumin (OVA) by a carbonyl diimidazole (CDI) method to be used as a coating antigen used for detecting mouse serums and a cell supernatant. The spleen cells of the immunized mice are fused with mouse myeloma cells by a PEG method, and screened by indirect ELISA and indirect competitive ELISA and subcloned three times to obtain a population-selective hybridoma cell strain.

Abstract: A network switching processing method and device, the method including sending a switching message of switching from multimode single frequency radio voice call continuity (SRVCC) of a source network to a target network, judging whether a switching test success response message sent by a terminal in the target network is detected, and in the case where the judgement result is yes, determining that the terminal is successfully switched from the SRVCC of the source network to the target network. The method and device solve the problem whereby the verification conducted on the capability for a terminal to support SRVCC switching cannot be realized, thus achieving the effect of conducting valid verification on the SRVCC switching of a terminal.

Abstract: A method and a system for active alignment of a light source assembly along three dimensions in an optical bench plane are provided. The light source assembly, preferably a laser diode on its sub-mount, is actively aligned in three dimensions, longitudinal, transection and vertical along the optical bench. The light source assembly is attached on edge of the optical bench, via adhesion processes, such as solder welding. Optical components such as collimator lens, isolator, etc are first passively aligned on the optical bench using alignment marks and epoxy slots provided on the surface of the optical bench. Then, laser diode, mounted on a laser diode sub-mount, is aligned in X and Z direction. Thereafter, the light source assembly is pushed towards the edge of the optical bench and attached with the edge via a solder joint. Also, a compensator can be actively aligned until the optimum light intensity achieved.

Abstract: A method includes forming a first region including a pair of first FinFETs and a second region including a pair of second FinFETs on a substrate. Each FinFET includes a metal gate having a first spacer adjacent thereto, and each first FinFET has a gate dielectric that is thicker than a gate dielectric of each second FinFET, such that the first FinFETs can be higher voltage input/output devices. The method forms a first contact between the metal gates of the pair of first FinFETs with a second spacer thereabout, the second spacer contacting a portion of each first spacer. The second spacer thus has a portion extending parallel to the metal gates, and a portion extending perpendicular to the metal gates. A second contact is formed between the metal gates of the pair of second FinFETs, and the second contact devoid of the second spacer.

Abstract: A hybridoma cell strain secreting a nifursol residue marker monoclonal antibody with CGMCC No. 18525 is prepared in the following way: BALB/c mice are subjected to the first immunization with a complete Freund's adjuvant, subjected to booster immunization with an incomplete Freund's adjuvant for four times, and subjected to rush immunization once with nifursol residue marker complete antigen without a Freund's adjuvant so that the BALB/c mice are immunized; the spleen cells of the immunized mice with high titer and low IC50 were fused with mouse myeloma cells by a PEG method, and the fused cells are screened through indirect competitive ELISA and subcloned three times. The monoclonal antibody secreted by this cell strain has good specificity and detection sensitivity (IC50 value of 2 ?g/L) to the nifursol residue marker and can be used for residue detection of the nifursol residual marker in food.

Abstract: One illustrative integrated circuit product disclosed herein includes a short-channel transistor device and a long-channel transistor device formed above a semiconductor substrate, wherein a first gate structure for the short-channel transistor device includes a short-channel WFM layer with a first upper surface that is positioned at a first distance above an upper surface of the semiconductor substrate, and wherein a second gate structure for the long-channel transistor device includes a long-channel WFM layer with a second upper surface that is positioned at a second distance above the upper surface of the semiconductor substrate, wherein the first distance is greater than the second distance.