Abstract: An electronic includes an electronic element, an encapsulation layer surrounding the electronic element, a first circuit structure, a second circuit structure and a connecting structure. The encapsulation layer has a top surface, a bottom surface and an opening, wherein a sidewall of the opening connects the top surface and the bottom surface. The first circuit structure is disposed at the top surface of the encapsulation layer. The second circuit structure is disposed at the bottom surface of the encapsulation layer. The connecting structure is disposed in the opening, wherein the electronic element is electrically connected to the second circuit structure through the first circuit structure and the connecting structure. The connecting structure includes a first sub layer and a second sub layer, the first sub layer is located between the encapsulation layer and the second sub layer, and the first sub layer covers the sidewall of the opening.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: In an embodiment, a method includes: forming a fin extending from a substrate, the fin having a first width and a first height after the forming; forming a dummy gate stack over a channel region of the fin; growing an epitaxial source/drain in the fin adjacent the channel region; and after growing the epitaxial source/drain, replacing the dummy gate stack with a metal gate stack, the channel region of the fin having the first width and the first height before the replacing, the channel region of the fin having a second width and a second height after the replacing, the second width being less than the first width, the second height being less than the first height.

Abstract: A blood pressure detection device manufactured by a semiconductor process includes a substrate, a microelectromechanical element, a gas-pressure-sensing element, a driving-chip element, an encapsulation layer and a valve layer. The substrate includes inlet apertures. The microelectromechanical element and the gas-pressure-sensing element are stacked and integrally formed on the substrate. The encapsulation layer is encapsulated and positioned on the substrate. A flowing-channel space is formed above the microelectromechanical element and the gas-pressure-sensing element. The encapsulation layer includes an outlet aperture in communication with an airbag. The driving-chip element controls the microelectromechanical element, the gas-pressure-sensing element and valve units to transport gas.

Abstract: A gas detection purification device is disclosed and includes a main body, a purification unit, a gas guider, a gas detection module and a controlling-driving module. The main body includes an inlet, an outlet, an external socket and a gas-flow channel disposed between the inlet and the outlet. The purification unit is disposed in the gas-flow channel for filtering gas introduced through the gas-flow channel. The gas guider is disposed in the gas channel and located at a side of the purification unit. The gas is inhaled through the inlet, flows through the purification unit and is discharged out through the outlet. The gas detection module is plugged into or detached from the external socket. The controlling driving module is disposed within the main body and electrically connected to the gas guider to control the operation of the gas guider in an enabled state and a disabled state.

Abstract: A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, ?-?*stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.

Abstract: The present disclosure provides a matte-type electromagnetic interference shielding film including bio-based components, which includes a bio-based insulating layer, a bio-based adhesive layer, a metal layer, and a bio-based electrically conductive adhesive layer. The matte-type electromagnetic interference shielding film including the bio-based component of the present disclosure has a matte appearance and high bio-based content and has the advantages of good surface insulation, high surface hardness, good chemical resistance, high shielding performance, good adhesion strength, low transmission loss, high transmission quality, good operability, high heat resistance, and the inner electrically conductive adhesive layer with long shelf life and storage life. The present disclosure further provides a preparation method thereof.

Abstract: A method for manufacturing a semiconductor device is described. The method includes the following steps. A low-dimensional material (LDM) layer is formed on a semiconductor substrate, wherein the LDM layer includes sublayers stacked upon one another. A plasma treatment is performed to the LDM layer to transform at least one sublayer into an oxide layer, wherein the plasma treatment is performed under a temperature equivalent to or lower than about 80 degrees Celsius. At least one electrode is disposed over the oxide layer.

Abstract: A blood pressure device includes a first blood pressure measuring device, a second blood pressure measuring device, and a controller. The first blood pressure measuring device is to be worn on a first position of a wrist so as to obtain a first blood pressure information of the first position. The second blood pressure measuring device is to be worn on a second position of the wrist so as to obtain a second blood pressure information of the second position. The controller is electrically coupled to the first blood pressure measuring device and the second blood pressure measuring device so as to adjust tightness between the expanders and the user's skin, respectively. The controller receives, processes, and calculates a pulse transit time between the first blood pressure information and the second blood pressure information, and the controller obtains at least one blood pressure value based on the pulse transit time.

Abstract: The present disclosure provides one embodiment of a method making semiconductor structure. The method includes forming a composite stress layer on a semiconductor substrate, wherein the forming of the composite stress layer includes forming a first stress layer of a dielectric material with a first compressive stress and forming a second stress layer of the dielectric material with a second compressive stress on the first stress layer, the second compressive stress being greater than the first compressive stress; and patterning the semiconductor substrate to form fin active regions using the composite stress layer as an etch mask.

Abstract: A semiconductor device includes source/drain regions, a gate structure, a first gate spacer, and a dielectric material. The source/drain regions are over a substrate. The gate structure is laterally between the source/drain regions. The first gate spacer is on a first sidewall of the gate structure, and spaced apart from a first one of the source/drain regions at least in part by a void region. The dielectric material is between the first one of the source/drain regions and the void region. The dielectric material has a gradient ratio of a first chemical element to a second chemical element.

Abstract: A semiconductor device according to the present disclosure includes a gate-all-around (GAA) transistor in a first device area and a fin-type field effect transistor (FinFET) in a second device area. The GAA transistor includes a plurality of vertically stacked channel members and a first gate structure over and around the plurality of vertically stacked channel members. The FinFET includes a fin-shaped channel member and a second gate structure over the fin-shaped channel member. The fin-shaped channel member includes semiconductor layers interleaved by sacrificial layers.

Abstract: A system and method for maximizing bandwidth in an uplink for a 5G communication system is disclosed. Multiple end devices generate image streams. A gateway is coupled to the end devices. The gateway includes a gateway monitor agent collecting utilization rate data of the gateway and an image inspector collecting inspection data from the received image streams. An edge server is coupled to the gateway. The edge server includes an edge server monitor agent collecting utilization rate data of the edge server. An analytics manager is coupled to the gateway and the edge server. The analytics manager is configured to determine an allocation strategy based on the collected utilization rate data from the gateway and the edge server.

Abstract: A manufacturing method of miniature fluid actuator is disclosed and includes the following steps. A flow-channel main body manufactured by a CMOS process is provided, and an actuating unit is formed by a deposition process, a photolithography process and an etching process. Then, at least one flow channel is formed by etching, and a vibration layer and a central through hole are formed by a photolithography process and an etching process. After that, an orifice layer is provided to form at least one outflow opening by an etching process, and then a chamber is formed by rolling a dry film material on the orifice layer. Finally, the orifice layer and the flow-channel main body are flip-chip aligned and hot-pressed, and then the miniature fluid actuator is obtained by a flip-chip alignment process and a hot pressing process.

Abstract: A filtration and purification processing method includes following steps: (1) providing a filtration and purification device; (2) performing a gas introduction, filtration, and detection procedure; (3) performing a detection and determination procedure to the purified gas; (4) performing a circulating filtration and detection procedure to the purified gas; and (5) repeating filtration and purification procedures to the purified gas several times and guiding out the purified gas.

Abstract: A health monitoring device having gas detection function is disclosed. The health monitoring device includes a main body. The main body has at least one inlet and at least one outlet, and includes a gas detection module. The gas detection module includes a piezoelectric actuator and at least one sensor. Gas is inhaled into the main body through the inlet by the piezoelectric actuator, is discharged out through the outlet, and is transported to the at least one sensor to be detected so as to obtain gas information.

Abstract: The home device capable of gas detection is provided and includes a main body and a gas detection module. The main body has at least one inlet, at least one outlet and a gas flowing channel disposed between the at least one inlet and the at least one outlet. The gas detection module is disposed in the gas flowing channel of the main body and includes a piezoelectric actuator and at least one sensor. Gas is inhaled into the gas flowing channel through the inlet by the piezoelectric actuator, is discharged out through the outlet, and is transported to the at least one sensor to be detected so as to obtain gas information.

Abstract: A piezoelectric actuator includes a square suspension plate, an outer frame, a plurality of brackets and a square piezoelectric ceramic plate. The outer frame is arranged around the suspension plate. A second surface of the outer frame and a second surface of the suspension plate are coplanar with each other. Each of the plurality of brackets has two ends, a first end is perpendicular to and connected with the suspension plate, and a second end is perpendicular to and connected with the outer frame for elastically supporting the suspension plate. Each bracket has a length in a range between 1.22 mm and 1.45 mm and a width in a range between 0.2 mm and 0.6 mm. A length of the piezoelectric ceramic plate is not larger than a length of the suspension plate. The piezoelectric ceramic plate is attached on a first surface of the suspension plate.

Abstract: A gas exchange device for filtering a gas is provided. The gas exchange device includes a gas-intake channel having a gas-intake-channel inlet and a gas-intake-channel outlet, a gas-exhaust channel disposed aside the gas-intake channel and including a gas-exhaust-channel inlet and a gas-exhaust-channel outlet, a purification unit disposed in the gas-intake channel for filtering the gas passing through the gas-intake channel, a gas-intake guider and a gas-exhaust guider for guiding the gas, a driving controller disposed in the gas-intake channel near the gas-intake guider for controlling enablement and disablement of the purification unit, the gas-intake guider and the gas-exhaust guider, and a gas detection main body for detecting the gas and generating detection data.

Abstract: A wafer structure is disclosed and includes a chip substrate and an inkjet chip. The chip substrate is a silicon substrate fabricated by a semiconductor process on a wafer of 12 inches. The inkjet chips are formed on the chip substrate by the semiconductor process and diced into the inkjet chip. The inkjet chip includes plural ink-drop generators generated by the semiconductor process on the chip substrate. Each of the plurality of ink-drop generators includes a nozzle. A diameter of the nozzle is in a range between 0.5 micrometers and 10 micrometers. A volume of an inkjet drop discharged from the nozzle is in a range between 1 femtoliter and 3 picoliters. The ink-drop generators form plural longitudinal axis array groups having a pitch and plural horizontal axis array groups having a central stepped pitch equal to or less than 1/600 inches.