Abstract: Embodiments of the present disclosure relate to a system, a software application, and methods of digital lithography for semiconductor packaging. The method includes comparing positions of vias and via locations, generating position data based on the comparing the positions of vias and the via locations, providing the position data of the vias to a digital lithography device, updating a redistributed metal layer (RDL) mask pattern according to the position data such that RDL locations correspond to the positions of the vias, and projecting the RDL mask pattern with the digital lithography device.

Abstract: Various methods and systems for identifying defect types on a wafer are provided. One computer-implemented method for identifying defect types on a wafer includes acquiring output of an inspection system for defects detected on a wafer. The output is acquired by different combinations of illumination and collection channels of the inspection system. The method also includes identifying defect types of the defects based on the output acquired by a set of the different combinations. The set of the different combinations is selected based on the defect types to be identified on the wafer and a wafer type of the wafer such that a different set of the different combinations of the illumination and collection channels is used for identifying different defect types on different wafer types.

Abstract: Calibration of pattern recognition in bright field imaging systems is disclosed. A target pattern on a substrate on the stage is brought into focus of a bright field system. The image is scanned in a first direction while measuring an edge scattering pattern from a feature of the target pattern. The edge scattering pattern is characterized by first and second peaks. A position of the bright field system's illuminator or beam shaping and relay optics is adjusted perpendicular to an optical path until the first and second peaks are approximately equal in height.

Abstract: Various methods and systems for identifying defect types on a wafer are provided. One computer-implemented method for identifying defect types on a wafer includes acquiring output of an inspection system for defects detected on a wafer. The output is acquired by different combinations of illumination and collection channels of the inspection system. The method also includes identifying defect types of the defects based on the output acquired by a set of the different combinations. The set of the different combinations is selected based on the defect types to be identified on the wafer and a wafer type of the wafer such that a different set of the different combinations of the illumination and collection channels is used for identifying different defect types on different wafer types.

Abstract: Calibration of pattern recognition in bright field imaging systems is disclosed. A target pattern on a substrate on the stage is brought into focus of a bright field system. The image is scanned in a first direction while measuring an edge scattering pattern from a feature of the target pattern. The edge scattering pattern is characterized by first and second peaks. A position of the bright field system's illuminator or beam shaping and relay optics is adjusted perpendicular to an optical path until the first and second peaks are approximately equal in height.