Abstract: A memory subsystem includes memory devices with space dynamically allocated for improvement of reliability, availability, and serviceability (RAS) in the system. Error checking and correction (ECC) logic detects an error in all or a portion of a memory device. In response to error detection, the system can dynamically perform one or more of: allocate active memory device space for sparing to spare a failed memory segment; write a poison pattern into a failed cacheline to mark it as failed; perform permanent fault detection (PFD) and adjust application of ECC based on PFD detection; or, spare only a portion of a device and leave another portion active, including adjusting ECC based on the spared portion. The error detection can be based on bits of an ECC device, and error correction based on those bits and additional bits stored on the data devices.

Abstract: A memory management system includes a cache invalidation logic configured to invalidate, based a cache invalidation event, cache entries within a cache memory by having each cache entry, of the cache entries within the cache memory, reference a respective dummy address from among dummy addresses within a dummy address space, wherein the cache memory is assigned to a memory, the memory has a memory address space associated therewith to provide access the memory, and each dummy address of the dummy addresses within the dummy address space is distinct from any address of the memory address space.

Abstract: An embodiment of a memory controller device includes technology to control access to a multi-level memory including at least a first level memory and a second level memory, provide direct access to the first level memory based on a system memory address, cache accesses to the second level memory in a second portion of the first level memory, and address a memory space with a total memory capacity which includes a first capacity of the first portion of the first level memory plus a second capacity of the second level memory. Other embodiments are disclosed and claimed.

Abstract: An apparatus is described. The apparatus includes a processor. The processor includes a memory controller to read and write from a memory. The memory controller includes error correction coding (ECC) circuitry to correct errors in data read from the memory. The processor includes register space to track read data error information. The processor includes an embedded controller. The processor includes local memory coupled to the embedded controller. The embedded controller is to read the read data error information and store the read data error information in the local memory.

Abstract: A system can dynamically migrate memory pages from near memory to far memory during runtime. A system basic input output system (BIOS) can program a first memory address space of size P and a second memory address space of size P to a near memory (NM) space of size (N) and a far memory (FM) space of size (M), where P equals N+M. For the first memory address space, the OS can manage the NM space and the FM space as a flat memory space with an address space of size P available. For the second memory address space, the OS can manage the NM space as a NM cache for FM, with an address space of size M available.

Abstract: A system includes a multilevel memory such as a two level memory (2LM), where a first level memory acts as a cache for the second level memory. A memory controller or cache controller can detect a cache miss in the first level memory for a request for data. Instead of automatically performing a swap, the controller can determine whether to perform a swap based on a swap policy assigned to a memory region associated with the address of the requested data.

Abstract: In an embodiment, a processor for reverse translation includes a plurality of processing engines (PEs) to execute threads and a reverse translation circuit. The reverse translation circuit is to: determine a target module address of a corrupt portion of a memory module; determine a plurality of system physical address (SPA) addresses associated with the memory module; and for each SPA address in the plurality of SPA addresses, translate the SPA address into a translated module address, and in response to a determination that the translated module address matches the target module address, log the SPA address as a result of a reverse translation of the target module address. Other embodiments are described and claimed.

Abstract: A memory controller having an error checking and correction (ECC) circuitry can detect an error in data being read from memory and correct that error with a retry flow. The read data is stored in a read data buffer at the memory controller when the read data is received from memory. Once the ECC circuitry detects an error in the read data, the retry flow enables access to that data from the read data buffer instead of reading the data from memory for the second time. Access to the data from the read data buffer reduces the overall time needed for the correction flow compared to a retry flow that rereads the data from memory.

Abstract: Power consumption for refresh of memory devices on a memory module is reduced by each memory device on the memory module to one of a plurality of sub channels on the memory module. Each sub channel has a thermal sensor that monitors the temperature of the DRAM chips in the region. The refresh rate is increased only for the memory devices in the sub channel in which the memory devices operate above a predefined high temperature. This results in a reduction in power required by the memory module for refresh and an increase in the maximum bandwidth of the memory module.

Abstract: According to various aspects, a memory system may include: a memory having a memory address space associated therewith to access the memory; a cache memory assigned to the memory; one or more processors configured to generate a dummy address space in addition to the memory address space, each address of the dummy address space being distinct from any address of the memory address space, and generate one or more invalid cache entries in the cache memory, the one or more invalid cache entries referencing one or more dummy addresses of the dummy address space.

Abstract: A two-level main memory in which both volatile memory and persistent memory are exposed to the operating system in a flat manner and data movement and management is performed in cache line granularity is provided. The operating system can allocate pages in the two-level main memory randomly across the first level main memory and the second level main memory in a memory-type agnostic manner, or, in a more intelligent manner by allocating predicted hot pages in first level main memory and predicted cold pages in second level main memory. The cache line granularity movement is performed in a “swap” manner, that is, a hot cache line in the second level main memory is swapped with a cold cache line in first level main memory because data is stored in either first level main memory or second level main memory not in both first level main memory and second level main memory.

Abstract: A memory subsystem includes multiple memory resources connected in parallel, including a first memory resource and a second memory resource. The memory subsystem can split a portion of data into multiple sub-portions. Split into smaller portions, the system needs fewer ECC (error checking and correction) bits to provide the same level of ECC protection. The portion of data can include N ECC bits for error correction, and the sub-portions can each include a sub-portion of (N?M) ECC bits for error correction. The system can then use M bits of data for non-ECC purposes, such as metadata.

Abstract: According to various aspects, a memory system may include: a memory having a memory address space associated therewith to access the memory; a cache memory assigned to the memory; one or more processors configured to generate a dummy address space in addition to the memory address space, each address of the dummy address space being distinct from any address of the memory address space, and generate one or more invalid cache entries in the cache memory, the one or more invalid cache entries referencing one or more dummy addresses of the dummy address space.

Abstract: In an embodiment, a processor for reverse translation includes a plurality of processing engines (PEs) to execute threads and a reverse translation circuit. The reverse translation circuit is to: determine a target module address of a corrupt portion of a memory module; determine a plurality of system physical address (SPA) addresses associated with the memory module; and for each SPA address in the plurality of SPA addresses, translate the SPA address into a translated module address, and in response to a determination that the translated module address matches the target module address, log the SPA address as a result of a reverse translation of the target module address. Other embodiments are described and claimed.

Abstract: Power consumption for refresh of memory devices on a memory module is reduced by each memory device on the memory module to one of a plurality of sub channels on the memory module. Each sub channel has a thermal sensor that monitors the temperature of the DRAM chips in the region. The refresh rate is increased only for the memory devices in the sub channel in which the memory devices operate above a predefined high temperature. This results in a reduction in power required by the memory module for refresh and an increase in the maximum bandwidth of the memory module.

Abstract: According to various aspects, a memory system may include: a memory having a memory address space associated therewith to access the memory; a cache memory assigned to the memory; one or more processors configured to generate a dummy address space in addition to the memory address space, each address of the dummy address space being distinct from any address of the memory address space, and generate one or more invalid cache entries in the cache memory, the one or more invalid cache entries referencing one or more dummy addresses of the dummy address space.

Abstract: An embodiment of a memory controller device includes technology to control access to a multi-level memory including at least a first level memory and a second level memory, provide direct access to the first level memory based on a system memory address, cache accesses to the second level memory in a second portion of the first level memory, and address a memory space with a total memory capacity which includes a first capacity of the first portion of the first level memory plus a second capacity of the second level memory. Other embodiments are disclosed and claimed.

Abstract: An apparatus is described. The apparatus includes a memory controller having register space to inform the memory controller that the memory controller is coupled to a memory module that conforms to a first memory chip industry standard specification but is composed of memory chips that conform to a second, different memory chip industry standard specification.