Abstract: A thin film transistor and a method for manufacturing the same are provided. A top-gate thin film transistor is fabricated by a process using two gray-tone photomasks and a lift-off method. Therefore, the method can save cost of photomasks and processes comparing to a conventional fabrication method.

Abstract: A method of manufacturing a thin film transistor array substrate and a structure of the same are disclosed. The manufacturing method merely requires two steps of mask fabrication to accomplish the manufacture of thin film transistor array, in which the manufacturing method utilizes a first mask fabrication step to define a pattern of a source electrode and a drain electrode of the thin film transistor, and a partially-exposed dielectric layer, and utilizes a second mask fabrication step to define an arrangement of a transparent conductive layer. The manufacturing method and structure can dramatically reduce the manufacturing cost of masks and simplify the whole manufacturing process.

Abstract: A thin film transistor and a method for manufacturing the same are provided. A top-gate thin film transistor is fabricated by a process using two gray-tone photomasks and a lift-off method. Therefore, the method can save cost of photomasks and processes comparing to a conventional fabrication method.

Abstract: A method of manufacturing a thin film transistor array substrate and a structure of the same are disclosed. The manufacturing method merely requires two steps of mask fabrication to accomplish the manufacture of thin film transistor array, in which the manufacturing method utilizes a first mask fabrication step to define a pattern of a source electrode and a drain electrode of the thin film transistor, and a partially-exposed dielectric layer, and utilizes a second mask fabrication step to define an arrangement of a transparent conductive layer. The manufacturing method and structure can dramatically reduce the manufacturing cost of masks and simplify the whole manufacturing process.

Abstract: A method of forming a thin-film transistor array substrate is provided. A first mask is used to define a source, a drain and a channel on a substrate. A dielectric layer is formed to cover the source, the drain, the channel and the substrate. A second mask is used to define a patterned photoresist and the dielectric layer. A transparent conductive layer is formed to cover the patterned photoresist and the substrate. A lift-off process is performed to remove the patterned photoresist and a portion of the transparent conductive layer disposed on the patterned photoresist. A third mask is used to define a gate disposed on the dielectric layer.

Abstract: A method of forming a thin-film transistor array substrate is provided. A first mask is used to define a source, a drain and a channel on a substrate. A dielectric layer is formed to cover the source, the drain, the channel and the substrate. A second mask is used to define a patterned photoresist and the dielectric layer. A transparent conductive layer is formed to cover the patterned photoresist and the substrate. A lift-off process is performed to remove the patterned photoresist and a portion of the transparent conductive layer disposed on the patterned photoresist. A third mask is used to define a gate disposed on the dielectric layer.