Patents by Inventor Wei-Ping Dow

Wei-Ping Dow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11252816
    Abstract: A composite with hollow nano-structures includes multiple one dimensional hollow nanowires being dispersed into a polymer film. The polymer film is flexible, a dielectric constant of the one dimensional hollow nanowire is lower than a dielectric constant of the polymer film, and a dielectric constant of the composite is between the dielectric constant of the one dimensional hollow nanowire and the dielectric constant of the polymer film.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: February 15, 2022
    Assignee: National Chung Hsing University
    Inventors: Tzong-Ming Wu, Fuh-Sheng Shieu, Wei-Ping Dow, Hong-Ta Yang, Jie-Mao Wang, Hsiang-Ting Wang
  • Patent number: 11008665
    Abstract: A method for manufacturing a copper foil with a rough surface in a plating tank includes causing an electrolyte solution to flow between an anode and a cathode with a current density of 5 ASF-40 ASF. The copper foil with a rough surface including dense nodules of single copper crystals is deposited on the cathode. The electrolyte solution includes chloride ions (20 ppm-80 ppm), polyethylene glycol (PEG) with a molecular weight of 400-8000 (100 ppm-700 ppm), sulfuric acid (20 g/L-200 g/L), copper sulfate pentahydrate (70 g/L-320 g/L) and a sulfur compound (1 ppm-60 ppm).
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: May 18, 2021
    Assignee: NATIONAL CHUNG HSING UNIVERSITY
    Inventors: Wei-Ping Dow, Liang-Jie Lin, Chia-Hsiang Chen
  • Publication number: 20200154565
    Abstract: A composite with hollow nano-structures comprises multiple one dimensional hollow nanowires being dispersed into a polymer film; the polymer film is flexible; a dielectric constant of the one dimensional hollow nanowire is lower than a dielectric constant of the polymer film; and a dielectric constant of the composite is between the dielectric constant of the one dimensional hollow nanowire and the dielectric constant of the polymer film.
    Type: Application
    Filed: September 19, 2019
    Publication date: May 14, 2020
    Inventors: Tzong-Ming Wu, Fuh-Sheng Shieu, Wei-Ping Dow, Hong-Ta Yang, Jie-Mao Wang, Hsiang-Ting Wang
  • Patent number: 10543510
    Abstract: Non-conductive substrates, especially the sidewalls of micro/nano holes thereof are chemically modified (i.e., chemically grafted) by reduced graphene oxide (rGO). The rGO possesses excellent electrical conductivity and therefore the modified substrates become conductive, so that it can be directly electroplated. These rGO-grafted holes can pass thermal shock reliability test after electroplating. The rGO grafting process possesses many advantages, such as a short process time, no complex agent (i.e., no chelator), no toxic agents (i.e., formaldehyde for electroless Cu deposition). It is employed in an aqueous solution instead of an organic solvent, and therefore is environmentally friendly and beneficial for industrial production.
    Type: Grant
    Filed: June 2, 2017
    Date of Patent: January 28, 2020
    Assignees: NATIONAL CHUNG HSING UNIVERSITY, TRIALLIAN CORPORATION
    Inventors: Wei-Ping Dow, Wei-Yang Zeng, Yi-Yung Chen
  • Publication number: 20190376198
    Abstract: A method for manufacturing a copper foil with a rough surface in a plating tank includes causing an electrolyte solution to flow between an anode and a cathode with a current density of 5 ASF-40 ASF. The copper foil with a rough surface including dense nodules of single copper crystals is deposited on the cathode. The electrolyte solution includes chloride ions (20 ppm-80 ppm), polyethylene glycol (PEG) with a molecular weight of 400-8000 (100 ppm-700 ppm), sulfuric acid (20 g/L-200 g/L), copper sulfate pentahydrate (70 g/L-320 g/L) and a sulfur compound (1 ppm-60 ppm).
    Type: Application
    Filed: May 30, 2019
    Publication date: December 12, 2019
    Inventors: Wei-Ping Dow, Liang-Jie Lin, Chia-Hsiang Chen
  • Patent number: 10465056
    Abstract: The method for producing a transparent conductive substrate includes forming metal meshes on a flexible non-conductive substrate with high transmittance. It's unnecessary to use palladium as a catalyst in this method. The metal meshes are in the form of nano/micro wires and the conductive substrate has high transmittance of 80%-90% at visible light wavelengths of 390-750 nm.
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: November 5, 2019
    Assignee: NATIONAL CHUNG HSING UNIVERSITY
    Inventors: Wei-Ping Dow, Po-Ting Chen, Liang-Jie Lin, Hung-Ming Chang, Ting-Yun Lin, Fang-Yu Lin
  • Publication number: 20180355499
    Abstract: A film of single crystal copper is manufactured by means of electrodeposition without heat treatment. The grains of the single crystal copper have an average size of at least 10 ?m. The electrolytic solution used in the method contains chloride ions, a wetting agent, sulfuric acid, CuSO4.5H2O and alkanesulfonate sulfide. The ultra-large copper grains of the present invention contain very few impurities and thus possess low resistance, high conductivity, shining appearance and anti-fingerprint property.
    Type: Application
    Filed: January 4, 2018
    Publication date: December 13, 2018
    Inventors: Wei-Ping Dow, Po-Fan Chan
  • Publication number: 20180340050
    Abstract: The method for producing a transparent conductive substrate includes forming metal meshes on a flexible non-conductive substrate with high transmittance. It's unnecessary to use palladium as a catalyst in this method. The metal meshes are in the form of nano/micro wires and the conductive substrate has high transmittance of 80%-90% at visible light wavelengths of 390-750 nm.
    Type: Application
    Filed: November 6, 2017
    Publication date: November 29, 2018
    Inventors: Wei-Ping Dow, Po-Ting Chen, Liang-Jie Lin, Hung-Ming Chang, Ting-Yun Lin, Fang-Yu Lin
  • Publication number: 20180036769
    Abstract: Non-conductive substrates, especially the sidewalls of micro/nano holes thereof are chemically modified (i.e., chemically grafted) by reduced graphene oxide (rGO). The rGO possesses excellent electrical conductivity and therefore the modified substrates become conductive, so that it can be directly electroplated. These rGO-grafted holes can pass thermal shock reliability test after electroplating. The rGO grafting process possesses many advantages, such as a short process time, no complex agent (i.e., no chelator), no toxic agents (i.e., formaldehyde for electroless Cu deposition). It is employed in an aqueous solution instead of an organic solvent, and therefore is environmentally friendly and beneficial for industrial production.
    Type: Application
    Filed: June 2, 2017
    Publication date: February 8, 2018
    Inventors: Wei-Ping Dow, Wei-Yang Zeng, Yi-Yung Chen
  • Patent number: 9105696
    Abstract: A method for coating a layer of reduced graphene oxide (rGO) on the surface of substrate holes (especially holes with high aspect ratio) includes a serial wet process steps of hydrophilic treatment of the surface of the substrate, self-assembly of a silane layer, steps of grafting of a polymer layer, grafting of graphene oxide (GO), intercalation of metal ions, and intercalation of metal atom/rGO intercalation. The method further includes the decoration of conductive metals (copper or nickel tungsten) plug on the rGO layer in holes by electroplating process.
    Type: Grant
    Filed: August 4, 2014
    Date of Patent: August 11, 2015
    Assignee: NATIONAL CHUNG HSING UNIVERSITY
    Inventors: Wei-Ping Dow, Shih-Cheng Chang
  • Publication number: 20080087549
    Abstract: An additive for copper plating comprising, as an effective ingredient, a nitrogen-containing biphenyl derivative represented by the following formula (I): [wherein X represents a group selected from the following groups (II)-(VII): and Y represents a lower alkyl group, lower alkoxy group, nitro group, amino group, sulfonyl group, cyano group, carbonyl group, 1-pyridyl group, or the formula (VIII): (wherein R? represents a lower alkyl group)], a copper plating solution formed by adding the additive for copper plating to a copper plating solution containing a copper ion ingredient and an anion ingredient, and a method of manufacturing on an electronic circuit substrate having a fine copper wiring circuit, which comprises electroplating in the copper plating solution using as the cathode an electronic circuit substrate in which fine microholes or microgrooves in the shape of an electronic circuit are formed on the surface.
    Type: Application
    Filed: August 18, 2004
    Publication date: April 17, 2008
    Applicant: EBARA-UDYLITE CO.,LTD.
    Inventors: Hiroshi Ishizuka, Nobuo Sakagawa, Ryoichi Kimizuka, Wei-ping Dow
  • Publication number: 20070215490
    Abstract: A method of analyzing accelerator of copper electroplating includes a selective adsorption step and an electrochemical deposition step. First, a gold electrode is placed into a plating solution, which contains organic additives. Then, the gold electrode is dipped in the plating solution for a while to adsorb the sulfur-containing accelerators. After the sulfur-containing accelerators are adsorbed on the gold electrode, the gold electrode is rinsed with Milli-Q ultra pure water. Then, the gold electrode is put into an electrolyte, which contains PEG and chloride ions to carry out a cathodic cyclic voltammetry (CCV) for copper deposition on the gold electrode. A calibration curve for the accelerator analysis can be obtained by integrating the polarization curve measured from the CCV.
    Type: Application
    Filed: March 18, 2006
    Publication date: September 20, 2007
    Applicant: ROCKWOOD ELECTROCHEMICALS ASIA LTD.
    Inventors: Wei-Ping Dow, Ming-Yao Yen, Hsiao-Chun Huang
  • Publication number: 20070215479
    Abstract: A method for monitoring the filling performance of a copper plating formula for microvia filling includes measuring a first potential value at a first rotation speed and a second potential value at a second rotation speed with a Cu-RDE of a plating solution. Then, a potential difference is obtained by subtracting the potential measured at the second rotation speed from the first rotation speed. The filling performance is defined by the potential difference; that is, a high potential difference indicates a good filling performance.
    Type: Application
    Filed: March 15, 2006
    Publication date: September 20, 2007
    Applicant: ROCKWOOD ELECTROCHEMICALS ASIA LTD.
    Inventors: Wei-Ping Dow, Cheng-Wei Liu