Abstract: A bus bar subassembly adapted to connect a first circuit board and a second circuit board includes a first bus bar, a second bus bar and a first electrical connector. The first bus bar is electrically connected to the first circuit board. The second bus bar is electrically connected to the second circuit board. The first connector is electrically connected to the first bus bar and the second bus bar.

Abstract: A method including recovering a polymerization reactor effluent stream from one or more polymerization reactors, flashing the polymerization reactor effluent stream to form a flash gas stream, separating, in a first column, the flash gas stream into a first column overhead stream, a first column side stream, and a first column bottoms stream, separating the first column overhead stream into a gas stream and a liquid stream, and introducing a feed comprising the gas stream and at least a portion of the liquid stream to a second column to produce a second column overhead stream, a second column side stream, and a second column bottoms stream. A second column bottoms stream flow rate can comprise less than or equal to about 25 vol % of a total flow rate and a second column side stream flow rate can comprise greater than or equal to about 75 vol % the total flow rate.

Abstract: Methods, devices, and systems for managing memory devices are provided. In one aspect, a method includes, during a first loop of a program operation, applying a first program voltage to a first word line, applying, to a second word line, a first pass voltage during a first stage and a second pass voltage during a second stage; during a second loop, applying a second program voltage to the first word line, applying, to the second word line, a third pass voltage during a first stage and a fourth pass voltage during a second stage; and during a third loop, applying a third program voltage to the first word line, applying, to the second word line, a fifth pass voltage during a first stage and a sixth pass voltage during a second stage. The third pass voltage is lower than the first pass voltage and the fifth pass voltage.

Abstract: The present invention provides provide a pharmaceutical composition comprising a bispecific antigen binding molecule at an increased concentration, wherein the composition comprises at least one buffer agent, at least one saccharide; and at least one stabilizing agent selected from Ethylenediaminetetraacetic acid (EDTA), Diethylenetriaminepentetic acid (DTP A), and citric acid in order to stabilize the bispecific antigen-binding agent even at higher concentration.

Abstract: A memory device includes a memory cell array including a source layer, a bottom select gate layer, and a gate layer, and the bottom select gate layer is located between the source layer and the gate layer, wherein the bottom select gate layer includes a plurality of bottom select gates, and a bottom select gate of a first memory string and a bottom select gate of a second memory string are connected with a same select line; and a peripheral circuit coupled to the memory cell array, wherein the peripheral circuit is configured to apply a selection voltage to the select line to control the first memory string and the second memory string.

Abstract: Methods, devices, and systems for managing memory devices are provided. In one aspect, a method includes, during a first loop of a program operation, applying a first program voltage to a first word line, and applying, to a second word line, a first pass voltage during a first stage of the first loop and a second pass voltage during a second stage of the first loop. The method further includes, during a second loop of the program operation, applying a second program voltage to the first word line, and applying, to the second word line, a third pass voltage during a first stage of the second loop and a fourth pass voltage during a second stage of the second loop. A difference between the fourth pass voltage and the third pass voltage is greater than a difference between the second pass voltage and the first pass voltage.

Abstract: Examples of present disclosure disclose a memory device and an operation method thereof, and a readable storage medium. The memory device includes: a first memory region and a second memory region, each including a plurality of memory cells; and a peripheral circuit coupled with the first memory region and the second memory region and configured to: when writing data to the first memory region, perform a first program operation on memory cells to be programmed in the first memory region by using first program voltages that increase gradually; and when writing data in the first memory region to the second memory region, perform a second program operation on memory cells to be programmed in the second memory region by using second program voltages that increase gradually.

Abstract: A system for evaluating light scattering properties of a liquid sample includes a light scattering instrument with a chassis and a laser source that emits a laser beam along a path. An apparatus includes a pressure cell with a chamber for containing a fluid pressurized up to 350 MPa and a plurality of light-transmissive windows, including a beam entry window and a beam exit window positioned in the path of the laser beam, and one or more windows positioned orthogonal to the path of the laser beam. A biological sample is received in the pressure cell. A plurality of detectors includes a transmission detector disposed adjacent the beam exit window, or light scattering detectors positioned adjacent the windows orthogonal to the path of the laser beam and configured to detect light scattered from the laser beam passing through the sample. An external condition-inducing system provides a fluid temperature and pressure.

Abstract: Examples of the present disclosure provide a memory device, an operation method thereof, a memory system and a storage medium. The memory device includes a memory cell array including: a plurality of memory cells, and a peripheral circuit coupled with the memory cell array and configured to apply a read voltage to a selected word line coupled to a target memory cell of the plurality of memory cells and apply a pass voltage to a non-selected word line adjacent to the selected word line when performing a read operation on the target memory cell, wherein the pass voltage is related to the read voltage and a working temperature of the memory device when the read operation is performed.

Abstract: The present invention relates to a compound of formula (X) or a tautomer, stereoisomer, prodrug, crystal form, pharmaceutically acceptable salt, hydrate or solvate thereof, and a pharmaceutical composition containing the compound and a use.

Abstract: A memory system comprises: a memory device including a first word line; and a memory controller coupled to the memory device and configured to: acquire the number of read failure bits of a memory cell page coupled to the first word line; determine whether the number of read failure bits of the memory cell page is greater than a preset threshold; and control the memory device to perform a reprogram operation on the memory cell page in response to the number of read failure bits of the memory cell page being greater than the preset threshold.

Abstract: Examples of present disclosure disclose a memory device and an operation method thereof, and a readable storage medium. The memory device includes: a first memory region and a second memory region, each including a plurality of memory cells; and a peripheral circuit coupled with the first memory region and the second memory region and configured to: when writing data to the first memory region, perform a first program operation on memory cells to be programmed in the first memory region by using first program voltages that increase gradually; and when writing data in the first memory region to the second memory region, perform a second program operation on memory cells to be programmed in the second memory region by using second program voltages that increase gradually.

Abstract: The present disclosure provides a memory device, a memory system, and an operation method of a memory device, and relates to the technical field of semiconductor chips. The memory device includes a memory cell array including a source layer, a bottom select gate layer, and a gate layer, and the bottom select gate layer is located between the source layer and the gate layer, wherein the bottom select gate layer includes a plurality of bottom select gates, and a bottom select gate of a first memory string and a bottom select gate of a second memory string are connected with a same select line; and a peripheral circuit coupled to the memory cell array, wherein the peripheral circuit is configured to apply a selection voltage to the select line to control the first memory string and the second memory string.

Abstract: A method for processing an image, an electronic device, and a storage medium are provided. The method includes: acquiring an input image, the input image including a plurality of channels, and each channel of the plurality of channels including a plurality of pixel points; performing pixel extractions in parallel using a plurality of dedicated processing units on each channel of the input image, to obtain pixel point data for each corresponding pixel point of each channel; and splicing the pixel point data for each corresponding pixel point of each channel to obtain an output image.

Abstract: The present application provides a memory system, a method for operating the memory system, a controller and a storage medium. The memory system includes: a memory device and a controller; the controller is configured to send a read command to the memory device; the memory device is configured to read data stored in a first memory cell in the memory device according to the read command; the first memory cell and the second memory cell are located in the same memory string; the second memory cell is a memory cell that has not yet been written with data; the controller is further configured to send a write command to the memory device; the memory device is further configured to write data read from the first memory cell to the second memory cell according to the write command.

Abstract: Example memory devices, memory systems, and methods for managing over-programming in flash memory are disclosed. In one example, a method of operating a memory device includes, before erasing data in a memory block of the memory device, programing memory cells in the memory block to a pre-programmed state, and identifying a threshold voltage of the memory cells in the pre-programmed state. The method further includes, after erasing the data in the memory block, programing memory cells in the memory block using at least one program pulse determined based on the threshold voltage.

Abstract: A method including recovering a polymerization reactor effluent stream from one or more polymerization reactors, flashing the polymerization reactor effluent stream to form a flash gas stream, separating, in a first column, the flash gas stream into a first column overhead stream, a first column side stream, and a first column bottoms stream, separating the first column overhead stream into a gas stream and a liquid stream, and introducing a feed comprising the gas stream and at least a portion of the liquid stream to a second column to produce a second column overhead stream, a second column side stream, and a second column bottoms stream. A second column bottoms stream flow rate can comprise less than or equal to about 25 vol % of a total flow rate and a second column side stream flow rate can comprise greater than or equal to about 75 vol % the total flow rate.

Abstract: A device, a chip, and a method for data processing is provided. The device includes: a data transmission unit for receiving a plurality of groups of quantized data, each of the groups of quantized data including a quantization parameter and k first matrix elements in a first low-precision format; and converting the format of the k first matrix elements into a first high-precision format; and a systolic array including a processing element, which further includes: an arithmetic logic unit for calculating an accumulated sum of the element products of k first matrix elements in the first high-precision format multiplied by corresponding k second matrix elements; and a k-dimensional accumulator configured to calculate, by a floating-point multiplication unit arranged therein, a plurality of products of the quantization parameter included in each group of quantized data and a corresponding accumulated sum, and perform accumulation to the products.

Abstract: The present disclosure provides an operation method of a memory, a memory, and a memory system, and relates to the technical field of memory technology. An example method includes: at a first program stage, performing a program operation on memory cells of a target group including a first memory cell and a second memory cell for a first number of times, wherein the first memory cell and the second memory cell have different target program states, then performing a verify operation using a verify voltage for the target group; and after the second memory cell passes the verification that uses the verify voltage for the target group, performing the program operation on the second memory cells for a second number of times, and inhibiting the second memory cell from being verified.

Abstract: Examples of the present application provide a memory system and an operation method thereof, and a storage medium. The memory system includes: a memory device including memory blocks; and a memory controller coupled with the memory device and configured to: in response to a write command, based on a data retention parameter of each of the memory blocks, determine a second memory block from first memory blocks among the memory blocks, the first memory blocks being at least partly in an erased state, wherein the second memory block is a first memory block with a maximum data retention parameter among the first memory blocks; and write to-be-written data to the second memory block.