Patents by Inventor Wei-Shan Hu
Wei-Shan Hu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11815762Abstract: A backlight module is provided. The backlight module includes a substrate having a substrate surface, a conductive layer disposed on the substrate surface, a plurality of LED chips disposed on and electrically connected to the conductive layer, a light-permeable layer having a light-permeable surface away from the substrate surface, and a pattern layer disposed on the light-permeable surface and having a plurality of first patterns corresponding to and respectively located above the plurality of LED chips. Wherein, each first pattern has a maximum width. A maximum width of one first pattern satisfies the following formula: WP?2n(TE?TL)(1?1/n2)1/2+WL; wherein WP is the maximum width of one first pattern, n is a refractivity of the light-permeable layer, TE is a thickness of the light-permeable layer, TL is a thickness of the LED chip, WL is a maximum width of LED chip corresponding to the first pattern.Type: GrantFiled: November 30, 2022Date of Patent: November 14, 2023Assignees: EPISTAR CORPORATION, Yenrich Technology CorporationInventors: Wen-Chien Wu, Wei-Shan Hu, Ching-Tai Cheng
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Publication number: 20230343894Abstract: A pixel package includes a carrier, a first light-emitting unit, a second light emitting unit, a reflective layer, and a light-absorbing layer. The carrier has a top surface and a conductive layer. The first light-emitting unit and the second light-emitting unit are arranged on the conductive layer and have a light-emitting surface and a side surface respectively. The reflective layer is arranged on the top surface and contacts the conductive layer. The light-absorbing layer is arranged on the reflective layer and contacts the first side surface and the second side surface while exposing the first light-emitting surface and the second light-emitting surface. In a cross-sectional view, the light-absorbing layer has a first thickness and a second thickness between the first side surface and the second side surface. The first thickness is farther away from and the first side surface than the second thickness, and is smaller than the second thickness.Type: ApplicationFiled: April 25, 2023Publication date: October 26, 2023Applicant: EPISTAR CORPORATIONInventors: Chao Chi TU, Chung Che DAN, Wei Shan HU, Ching Tai CHENG
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Patent number: 11774241Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: GrantFiled: December 15, 2021Date of Patent: October 3, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei-Shan Hu, Dong Gui, Jang Jung Lee, Che-Liang Li, Duen-Huei Hou, Wen-Chung Liu
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Patent number: 11764328Abstract: The light-emitting diode package includes a plurality of bumps being a couple corresponding to each other. Each of the bumps has a first part and a second part placed under the first part, and a gap is formed between the bumps in a period-repeating wriggle shape or an irregular wriggle shape. Accordingly, the distance between the bumps of the light-emitting diode package is small, which results in a less stress being concentrated at the space between the bumps, as a result, a crack is difficultly caused by the stress to the light-emitting diode package, in other words, the structural strength between the bumps and the covering part is enhanced. Still, while being manufactured, the yield rate of the light-emitting diode package is also improved since there is almost no crack to reduce the yield rate.Type: GrantFiled: August 13, 2019Date of Patent: September 19, 2023Assignee: EPISTAR CORPORATIONInventors: Ying-Yong Su, Hsin-Mao Liu, Wei-Shan Hu, Ching-Tai Cheng
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Patent number: 11703523Abstract: A method of detecting a ferroelectric signal from a ferroelectric film and a piezoelectric force microscopy (PFM) apparatus are provided. The method includes following steps. An input waveform signal is applied to the ferroelectric film. An atomic force microscope probe scans over a surface of the ferroelectric film to measure a surface topography of the ferroelectric film. A deflection of the atomic force microscope probe is detected when the input waveform signal is applied to the ferroelectric film to generate a deflection signal. Spectrum data of the ferroelectric film based on the deflection signal is generated. The spectrum data of the ferroelectric film is analyzed to determine whether the spectrum data of the ferroelectric film is a ferroelectric signal or a non-ferroelectric signal.Type: GrantFiled: July 21, 2021Date of Patent: July 18, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Shan Hu, Dong Gui, Jang-Jung Lee
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Publication number: 20230176417Abstract: A backlight module is provided. The backlight module includes a substrate having a substrate surface, a conductive layer disposed on the substrate surface, a plurality of LED chips disposed on and electrically connected to the conductive layer, a light-permeable layer having a light-permeable surface away from the substrate surface, and a pattern layer disposed on the light-permeable surface and having a plurality of first patterns corresponding to and respectively located above the plurality of LED chips. Wherein, each first pattern has a maximum width. A maximum width of one first pattern satisfies the following formula: WP?2n(TE?TL)(1?1/n2)1/2+WL; wherein WP is the maximum width of one first pattern, n is a refractivity of the light-permeable layer, TE is a thickness of the light-permeable layer, TL is a thickness of the LED chip, WL is a maximum width of LED chip corresponding to the first pattern.Type: ApplicationFiled: November 30, 2022Publication date: June 8, 2023Inventors: Wen-Chien WU, Wei-Shan HU, Ching-Tai CHENG
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Publication number: 20230161196Abstract: A display device includes a first light-emitting module and a second light-emitting module. Each light-emitting module has a substrate, a plurality of LED dies arranged on the substrate, a reflective layer on the substrate, and a light-transmissive layer. The light-transmissive layer covers the substrate, the plurality of LED dies, and the reflective layer. Both the light-transmissive layer of the first module and the light-transmissive layer of the second module have rough uppermost surfaces. The first light-emitting module has a first reflectivity, the second light-emitting module has a second reflectivity, and a standard deviation between the first reflectivity and the second reflectivity is not greater than 0.5.Type: ApplicationFiled: November 17, 2022Publication date: May 25, 2023Inventors: Chong-Yu WANG, Ching-Tai CHENG, Wei-Shan HU
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Patent number: 11380824Abstract: The application discloses a light-emitting device including a carrier, a light-emitting element and a connecting structure. The carrier includes a first connecting portion and a first necking portion extended from the first connecting portion. The first connecting portion has a first width, and the first necking portion has a second width. The second width is less than the first width. The light-emitting element includes a first light-emitting layer being able to emit a first light and a first contacting electrode formed under the first light-emitting layer. The first contacting electrode is corresponded to the first connecting portion. The connecting structure includes a first electrical connecting portion and a protecting portion surrounding the first electrical connecting portion. The first electrical connecting portion is electrically connected to the first connecting portion and the first contacting electrode.Type: GrantFiled: August 11, 2020Date of Patent: July 5, 2022Assignee: EPISTAR CORPORATIONInventors: Ching-Tai Cheng, Shau-Yi Chen, Yih-Hua Renn, Wei-Shan Hu, Pei-Hsuan Lan
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Publication number: 20220107179Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: ApplicationFiled: December 15, 2021Publication date: April 7, 2022Inventors: Wei-Shan HU, Dong GUI, Jang Jung LEE, Che-Liang LI, Duen-Huei HOU, Wen-Chung LIU
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Patent number: 11236996Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: GrantFiled: July 13, 2020Date of Patent: February 1, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei-Shan Hu, Dong Gui, Jang Jung Lee, Che-Liang Li, Duen-Huei Hou, Wen-Chung Liu
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Publication number: 20210349126Abstract: A method of detecting a ferroelectric signal from a ferroelectric film and a piezoelectric force microscopy (PFM) apparatus are provided. The method includes following steps. An input waveform signal is applied to the ferroelectric film. An atomic force microscope probe scans over a surface of the ferroelectric film to measure a surface topography of the ferroelectric film. A deflection of the atomic force microscope probe is detected when the input waveform signal is applied to the ferroelectric film to generate a deflection signal. Spectrum data of the ferroelectric film based on the deflection signal is generated. The spectrum data of the ferroelectric film is analyzed to determine whether the spectrum data of the ferroelectric film is a ferroelectric signal or a non-ferroelectric signal.Type: ApplicationFiled: July 21, 2021Publication date: November 11, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Shan Hu, Dong Gui, Jang-Jung Lee
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Patent number: 11079405Abstract: A method of detecting a ferroelectric signal from a ferroelectric film and a piezoelectric force microscopy (PFM) apparatus are provided. The method includes following steps. An input waveform signal is generated, wherein the input waveform signal includes a plurality of read voltage steps with different voltage levels. The input waveform signal to the ferroelectric film is applied. An atomic force microscope probe scans over a surface of the ferroelectric film to measure a surface topography of the ferroelectric film. A deflection of the atomic force microscope probe is detected when the input waveform signal is applied to a pixel of the ferroelectric film to generate a deflection signal. Spectrum data of the pixel based on the deflection signal is generated. The spectrum data of the pixel is analyzed to determine whether the spectrum data of the pixel is a ferroelectric signal or a non-ferroelectric signal.Type: GrantFiled: May 5, 2020Date of Patent: August 3, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Shan Hu, Dong Gui, Jang-Jung Lee
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Publication number: 20210050478Abstract: The light-emitting diode package includes a plurality of bumps being a couple corresponding to each other. Each of the bumps has a first part and a second part placed under the first part, and a gap is formed between the bumps in a period-repeating wriggle shape or an irregular wriggle shape. Accordingly, the distance between the bumps of the light-emitting diode package is small, which results in a less stress being concentrated at the space between the bumps, as a result, a crack is difficultly caused by the stress to the light-emitting diode package. In other words, the structural strength between the bumps and the covering part is enhanced. Still, while being manufactured, the yield rate of the light-emitting diode package is also improved since there is almost no crack to reduce the yield rate.Type: ApplicationFiled: August 13, 2019Publication date: February 18, 2021Inventors: Ying-Yong SU, Hsin-Mao LIU, Wei-Shan HU, Ching-Tai CHENG
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Publication number: 20200373468Abstract: The application discloses a light-emitting device including a carrier, a light-emitting element and a connecting structure. The carrier includes a first connecting portion and a first necking portion extended from the first connecting portion. The first connecting portion has a first width, and the first necking portion has a second width. The second width is less than the first width. The light-emitting element includes a first light-emitting layer being able to emit a first light and a first contacting electrode formed under the first light-emitting layer. The first contacting electrode is corresponded to the first connecting portion. The connecting structure includes a first electrical connecting portion and a protecting portion surrounding the first electrical connecting portion. The first electrical connecting portion is electrically connected to the first connecting portion and the first contacting electrode.Type: ApplicationFiled: August 11, 2020Publication date: November 26, 2020Inventors: Ching-Tai CHENG, Shau-Yi CHEN, Yih-Hua RENN, Wei-Shan HU, Pei-Hsuan LAN
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Publication number: 20200340807Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: ApplicationFiled: July 13, 2020Publication date: October 29, 2020Inventors: Wei-Shan HU, Dong GUI, Jang Jung LEE, Che-Liang LI, Duen-Huei HOU, Wen-Chung LIU
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Patent number: 10746542Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: GrantFiled: March 22, 2019Date of Patent: August 18, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Shan Hu, Dong Gui, Jang Jung Lee, Che-Liang Li, Duen-Huei Hou, Wen-Chung Liu
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Patent number: 10741734Abstract: The application discloses a light-emitting device including a carrier, a light-emitting element and a connecting structure. The carrier includes a first connecting portion and a first necking portion extended from the first connecting portion. The first connecting portion has a first width, and the first necking portion has a second width. The second width is less than the first width. The light-emitting element includes a first light-emitting layer being able to emit a first light and a first contacting electrode formed under the first light-emitting layer. The first contacting electrode is corresponded to the first connecting portion. The connecting structure includes a first electrical connecting portion and a protecting portion surrounding the first electrical connecting portion. The first electrical connecting portion is electrically connected to the first connecting portion and the first contacting electrode.Type: GrantFiled: January 30, 2019Date of Patent: August 11, 2020Assignee: EPISTAR CORPORATIONInventors: Ching-Tai Cheng, Shau-Yi Chen, Yih-Hua Renn, Wei-Shan Hu, Pei-Hsuan Lan
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Publication number: 20200096332Abstract: Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.Type: ApplicationFiled: March 22, 2019Publication date: March 26, 2020Inventors: Wei-Shan Hu, Dong Gui, Jang Jung Lee, Che-Liang Li, Duen-Huei Hou, Wen-Chung Liu
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Patent number: D897296Type: GrantFiled: December 27, 2018Date of Patent: September 29, 2020Assignee: Epistar CorporationInventors: Wei-Shan Hu, Ching-Tai Cheng, Pei-Hsuan Lan
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Patent number: D975664Type: GrantFiled: August 6, 2020Date of Patent: January 17, 2023Assignee: EPISTAR CORPORATIONInventors: Wei-Shan Hu, Ching-Tai Cheng, Pei-Hsuan Lan