Abstract: A semiconductor device is provided, which includes a semiconductor epitaxial structure, a metal contact structure, and a metal oxide layer. The semiconductor epitaxial structure includes an active structure and a semiconductor contact layer located on the active structure along a vertical direction. The metal contact structure directly contacts the semiconductor contact layer. The metal oxide layer is overlapped with the metal contact structure in a horizontal direction. The metal oxide layer and the metal contact structure are separated in the horizontal direction.

Abstract: The present disclosure provides a semiconductor device and a semiconductor component. The semiconductor device includes an active structure, a ring-shaped semiconductor contact layer, a first electrode, and an insulating layer. The active structure has a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. The ring-shaped semiconductor contact layer is located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall. The first electrode has an upper surface and covers the ring-shaped semiconductor contact layer. The insulating layer covers the first electrode and the active structure and has a second inner sidewall and a second outer sidewall. The first inner sidewall is not flush with the second inner sidewall in a vertical direction.