Patents by Inventor Wei-Shiuan Chen

Wei-Shiuan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PACKAGE STRUCTURE AND METHOD OF FABRICATING THE SAME
    Publication number: 20240105642
    Abstract: A method of manufacturing a package structure at least includes the following steps. An encapsulant laterally is formed to encapsulate the die and the plurality of through vias. A plurality of first connectors are formed to electrically connect to first surfaces of the plurality of through vias. A warpage control material is formed over the die, wherein the warpage control material is disposed to cover an entire surface of the die. A protection material is formed over the encapsulant and around the plurality of first connectors and the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 28, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hao-Jan Pei, Ching-Hua Hsieh, Hsiu-Jen Lin, Wei-Yu Chen, Chia-Shen Cheng, Chih-Chiang Tsao, Jen-Jui Yu, Cheng-Shiuan Wong
  • PACKAGE STRUCTURE
    Publication number: 20240088062
    Abstract: A package structure includes a die, an encapsulant laterally encapsulating the die, a warpage control material disposed over the die, and a protection material disposed over the encapsulant and around the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.
    Type: Application
    Filed: November 23, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hao-Jan Pei, Ching-Hua Hsieh, Hsiu-Jen Lin, Wei-Yu Chen, Chia-Shen Cheng, Chih-Chiang Tsao, Jen-Jui Yu, Cheng-Shiuan Wong
  • Treating a capping layer of a mask
    Patent number: 9897910
    Abstract: A method for forming a lithography mask includes forming a capping layer on a reflective multilayer layer, the capping layer comprising a first material, forming a patterned patterning layer on the capping layer, and introducing a secondary material into the capping layer, the secondary material having an atomic number that is smaller than 15.
    Type: Grant
    Filed: December 30, 2016
    Date of Patent: February 20, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Pei-Cheng Hsu, Chih-Cheng Lin, Ta-Cheng Lien, Wei-Shiuan Chen, Hsin-Chang Lee, Anthony Yen
  • Treating A Capping Layer of a Mask
    Publication number: 20170108768
    Abstract: A method for forming a lithography mask includes forming a capping layer on a reflective multilayer layer, the capping layer comprising a first material, forming a patterned patterning layer on the capping layer, and introducing a secondary material into the capping layer, the secondary material having an atomic number that is smaller than 15.
    Type: Application
    Filed: December 30, 2016
    Publication date: April 20, 2017
    Inventors: PEI-CHENG HSU, CHIH-CHENG LIN, TA-CHENG LIEN, WEI-SHIUAN CHEN, HSIN-CHANG LEE, ANTHONY YEN
  • Treating a capping layer of a mask
    Patent number: 9535317
    Abstract: A method for forming a lithography mask includes forming a capping layer on a reflective multilayer layer, the capping layer comprising a first material, forming a patterned patterning layer on the capping layer, and introducing a secondary material into the capping layer, the secondary material having an atomic number that is smaller than 15.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: January 3, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Pei-Cheng Hsu, Chih-Cheng Lin, Ta-Cheng Lien, Wei-Shiuan Chen, Hsin-Chang Lee, Anthony Yen
  • TREATING A CAPPING LAYER OF A MASK
    Publication number: 20160187770
    Abstract: A method for forming a lithography mask includes forming a capping layer on a reflective multilayer layer, the capping layer comprising a first material, forming a patterned patterning layer on the capping layer, and introducing a secondary material into the capping layer, the secondary material having an atomic number that is smaller than 15.
    Type: Application
    Filed: December 24, 2014
    Publication date: June 30, 2016
    Inventors: Pei-Cheng Hsu, Chih-Cheng Lin, Ta-Cheng Lien, Wei-Shiuan Chen, Hsin-Chang Lee, Anthony Yen