Abstract: A test system and a test method for a lip sticking force of tipping paper for cigarettes are provided. The test system includes an artificial lip and test equipment. The artificial lip is a silica gel block. The test equipment includes a friction meter testing platform, a force measuring sensor, a rigid rope, a pulley, a pulley bracket and a sample loading module. The pulley is installed on the pulley bracket, and the rigid rope slides in the pulley. The rigid rope is L-shaped, a first end of the rigid rope in a horizontal direction is connected to the force measuring sensor, and a second end of the rigid rope in a vertical direction is connected to the sample loading module. The artificial lip is located directly below the sample loading module, and the artificial lip is in contact with the sample loading module at a test position.

Abstract: A distributed display method provides different parts of an application interface that are collaboratively displayed on a plurality of terminals, so that manners for collaborative display between the plurality of terminals are more flexible and richer. A first terminal displays a first interface including a first part and a second part. When the first terminal detects that a preset condition is met, the first terminal displays a second interface, where the second interface includes the first part and does not include the second part; and the first terminal notifies a second terminal to display a third interface, where the third interface includes the second part and does not include the first part.

Abstract: A system and method for managing and controlling power of base station when a connectable terminal device is moving at speed through the coverage area of the base station, the method obtains a transmission power from a terminal through the base station; obtains location of the terminal, and generates a transmission power conversion table according to the terminal transmission power and the terminal location. The transmission power conversion table is transmitted to the terminal by the base station, the transmission power being used by the terminal according to the transmission power conversion table, avoiding repeated communications and electrical energy cost between base station and terminal in respect of the changing location of the terminal.

Abstract: Methods and systems for detecting defects on a specimen are provided. One system performs double detection in which at least one of the reference images compared to a test image is a computed reference image generated from multiple images corresponding to the test image. The other reference image may or may not be computed from more than one of the multiple images. Such a computed reference image may also be a median-based computed reference generated from multiple-median images generated from different subsets of images in a job of images generated by an inspection subsystem for a specimen. Such a system may also group images for a die row on a specimen into different jobs based on color so that different jobs have different color value ranges. Such grouping may also be performed so that each of the jobs includes a number of images greater than a predetermined, minimum job size.

Abstract: Provided are a parameter adjustment method, a server, and a storage medium. The parameter adjustment method comprises: acquiring an index value of a first performance index of a device; searching for superiority of each of a plurality of candidate values for a target operation parameter of the device on the basis of the index value of the first performance index, wherein the superiority of each of the plurality of candidate values refers to a superiority level of each of the plurality of candidate values that each of the plurality of candidate values is set to the target operation parameter on the basis of the index value of the first performance index; and selecting one candidate value as a set value of the target operation parameter after the adjustment according to the searched superiority of each of the plurality of candidate values.

Abstract: A system and method provide an automation solution for guiding a contact center agent during a communication session by providing contextual in-line assistance. Robotic process automation (RPA) is used for automating workflows and processes with robots that capture information from multiple applications of a contact center system and generate contextual guidance for the contact center agent via callout activities during the communication session.

Abstract: A dual connection re-establishment method, a non-transitory computer-readable storage medium, and a node are disclosed. The dual connection re-establishment method may include: sending a configuration information request to a target secondary node (SN) in response to a RRC connection re-establishment completion instruction sent by a UE (S1); receiving first configuration information fed back by the target SN (S2); and sending the first configuration information, and second configuration information corresponding to the MN to the UE for the UE to complete the RRC connection reconfiguration with the MN and the target SN according to the first configuration information and the second configuration information (S3).

Abstract: Systems and methods for detecting defects on a reticle are provided. One system includes computer subsystem(s) configured for performing at least one repeater defect detection step in front-end processing during an inspection process performed on a wafer having features printed in a lithography process using a reticle. The at least one repeater defect detection step performed in the front-end processing includes identifying any defects detected at corresponding locations in two or more test images by double detection and any defects detected by stacked defect detection as first repeater defect candidates. One or more additional repeater defect detections may be performed on the first repeater defect candidates to generate final repeater defect candidates and identify defects on the reticle from the final repeater defect candidates.

Abstract: Systems and methods for detecting defects on a reticle are provided. One system includes computer subsystem(s) configured for performing at least one repeater defect detection step in front-end processing during an inspection process performed on a wafer having features printed in a lithography process using a reticle. The at least one repeater defect detection step performed in the front-end processing includes identifying any defects detected at corresponding locations in two or more test images by double detection and any defects detected by stacked defect detection as first repeater defect candidates. One or more additional repeater defect detections may be performed on the first repeater defect candidates to generate final repeater defect candidates and identify defects on the reticle from the final repeater defect candidates.

Abstract: A system and method provide an automation solution for guiding a contact center agent during a communication session by providing contextual in-line assistance. Robotic process automation (RPA) is used for automating workflows and processes with robots that capture information from multiple applications of a contact center system and generate contextual guidance for the contact center agent via callout activities during the communication session.

Abstract: A system and method provide an automation solution for guiding a contact center agent during a communication session by providing contextual in-line assistance. Robotic process automation (RPA) is used for automating workflows and processes with robots that capture information from multiple applications of a contact center system and generate contextual guidance for the contact center agent via callout activities during the communication session.

Abstract: A system and method provide an automation solution for guiding a contact center agent during a communication session by providing contextual in-line assistance. Robotic process automation (RPA) is used for automating workflows and processes with robots that capture information from multiple applications of a contact center system and generate contextual guidance for the contact center agent via callout activities during the communication session.

Abstract: A refrigerator storage system is described. The refrigerator storage system comprises a display having a home screen and a processor coupled to the display. The processor is configured to display at least one widget that provides an operation on the display, wherein the at least one widget comprises an interface portion providing direct access to a feature of the widget, wherein the direct access to the feature of the widget is provided from the home screen.

Abstract: The present teaching relates to method, system, medium, and implementations for facilitating skill learning. Multimedia data in different modalities are received, wherein such data are recorded based on a performance exhibiting a skill. The data in each of the modalities are analyzed to extract information exhibited in the performance that is relevant to the skill and is used to generate an animated tutoring script. Such generated animated tutoring script is then archived for future access to enable a skill learning session in an augmented reality.

Abstract: A method for forming a trench capacitor without an additional mask adder and the resulting device are provided. Embodiments include forming a buried implant layer over a substrate; forming an EPI layer over the buried implant layer; forming an oxide layer over the EPI layer; forming a nitride layer over the oxide layer; forming first and second trenches in the nitride layer, the oxide layer, the EPI layer, the buried implant layer and the substrate, the first trench being wider and deeper than the second trench; forming a dielectric layer in the trenches; forming a first polysilicon layer over the dielectric layer in the trenches; removing the first polysilicon layer and the dielectric layer above the EPI layer in the trenches and at a bottom of the first trench; and forming a second polysilicon layer filling the first trench and above the EPI layer in the second trench.

Abstract: A method for forming a trench capacitor without an additional mask adder and the resulting device are provided. Embodiments include forming a buried implant layer over a substrate; forming an EPI layer over the buried implant layer; forming an oxide layer over the EPI layer; forming a nitride layer over the oxide layer; forming first and second trenches in the nitride layer, the oxide layer, the EPI layer, the buried implant layer and the substrate, the first trench being wider and deeper than the second trench; forming a dielectric layer in the trenches; forming a first polysilicon layer over the dielectric layer in the trenches; removing the first polysilicon layer and the dielectric layer above the EPI layer in the trenches and at a bottom of the first trench; and forming a second polysilicon layer filling the first trench and above the EPI layer in the second trench.

Abstract: A method for forming a trench capacitor without an additional mask adder and the resulting device are provided. Embodiments include forming a buried implant layer over a substrate; forming an EPI layer over the buried implant layer; forming an oxide layer over the EPI layer; forming a nitride layer over the oxide layer; forming first and second trenches in the nitride layer, the oxide layer, the EPI layer, the buried implant layer and the substrate, the first trench being wider and deeper than the second trench; forming a dielectric layer in the trenches; forming a first polysilicon layer over the dielectric layer in the trenches; removing the first polysilicon layer and the dielectric layer above the EPI layer in the trenches and at a bottom of the first trench; and forming a second polysilicon layer filling the first trench and above the EPI layer in the second trench.

Abstract: Device and method of forming a non-volatile memory (NVM) device are disclosed. The NVM device includes NVM cells disposed on a substrate in a device region. The NVM cell includes a floating gate (FG) with first and second FG sidewalls disposed on the substrate and an intergate dielectric layer disposed over the FG and substrate. Re-entrants are disposed at corners of the intergate dielectric which are filled by dielectric re-entrant spacers. An access gate (AG) with first and second AG sidewalls is disposed on the substrate adjacent to the FG such that the second AG sidewall is adjacent to a first FG sidewall and separated by the intergate dielectric layer and the re-entrant spacers prevent AG from filling the re-entrants. A first source/drain (S/D) region is disposed in the substrate adjacent to the first AG sidewall and a second S/D region is disposed in the substrate adjacent to the second FG sidewall.

Abstract: Device and method of forming a non-volatile memory (NVM) device are disclosed. The NVM device includes NVM cells disposed on a substrate in a device region. The NVM cell includes a floating gate (FG) with first and second FG sidewalls disposed on the substrate and an intergate dielectric layer disposed over the FG and substrate. Re-entrants are disposed at corners of the intergate dielectric which are filled by dielectric re-entrant spacers. An access gate (AG) with first and second AG sidewalls is disposed on the substrate adjacent to the FG such that the second AG sidewall is adjacent to a first FG sidewall and separated by the intergate dielectric layer and the re-entrant spacers prevent AG from filling the re-entrants. A first source/drain (S/D) region is disposed in the substrate adjacent to the first AG sidewall and a second S/D region is disposed in the substrate adjacent to the second FG sidewall.

Abstract: A method for forming a trench capacitor without an additional mask adder and the resulting device are provided. Embodiments include forming a buried implant layer over a substrate; forming an EPI layer over the buried implant layer; forming an oxide layer over the EPI layer; forming a nitride layer over the oxide layer; forming first and second trenches in the nitride layer, the oxide layer, the EPI layer, the buried implant layer and the substrate, the first trench being wider and deeper than the second trench; forming a dielectric layer in the trenches; forming a first polysilicon layer over the dielectric layer in the trenches; removing the first polysilicon layer and the dielectric layer above the EPI layer in the trenches and at a bottom of the first trench; and forming a second polysilicon layer filling the first trench and above the EPI layer in the second trench.