Patents by Inventor Wei-Sin Tan

Wei-Sin Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220241138
    Abstract: Devices, systems, and methods for percussion therapy of a patient's torso area provide percussive force to release and/or dislodge mucous from respiratory airways of a human patient. Such devices, systems, and methods may include a torso covering for securing to a patient's torso, percussive devices coupled to the torso covering, and an attachment assembly for supporting the torso covering. The percussive devices may include a percussion frame, an electromechanically actuated percussor for controlled movement between end positions, and resilient members attached to opposite ends of the percussion frame for assisting controlled movement of the percussor. The devices, systems, and methods disclosed herein provide efficient and comfortable high-frequency percussive force to a patient's torso, reducing stress on the patient and improving patient experience.
    Type: Application
    Filed: April 20, 2022
    Publication date: August 4, 2022
    Inventors: John A. Bobey, Bryan Chng, Kok Boon R. Ong, Harold M. Cabral, Deny D. Barilea, Suresha Venkataraya, Wei T. Tan, Clementine Pirio, Nicholas Mann, Chad M. Boerst, Mary J. Rossini, Denis Sin, Vinay Joshi, Dirk Tjepkema, Styze Spijksma, Petrus T. Rutgers, Peter J. van den Oever, Ari T. Adler, William C. Stewart, Jason Robinson, Timothy R. Proulx, Alex Staudt
  • Publication number: 20220208848
    Abstract: An engineered wafer includes a plurality of mesa structures that includes a first mesa structure and a second mesa structure. The first mesa structure includes a first porous layer of a first semiconductor material having a first lattice constant, and a first layer of a second semiconductor material on the first porous layer. The first porous layer is characterized by a first porosity. The second semiconductor material is characterized by a second lattice constant greater than the first lattice constant. The second mesa structure includes a second porous layer of the first semiconductor material, and a second layer of the second semiconductor material on the second porous layer. The second porous layer is characterized by a second porosity different from the first porosity. Active regions grown on the first and second layers of the second semiconductor material are configured to emit light of different colors.
    Type: Application
    Filed: December 30, 2020
    Publication date: June 30, 2022
    Inventors: Wei Sin TAN, Andrea PINOS, John Lyle WHITEMAN
  • Publication number: 20220209066
    Abstract: A light emitting diode (LED) device includes a substrate and a plurality of mesa structures. Each mesa structure includes a layer of a first semiconductor material, a porous layer of the first semiconductor material on the layer of the first semiconductor material, and a layer of a second semiconductor material on the porous layer. The porous layer is characterized by an areal porosity ?15%. The second semiconductor material is characterized by a lattice constant greater than a lattice constant of the first semiconductor material. Each mesa structure also includes an active region on the layer of the second semiconductor material and configured to emit red light, a p-contact layer on the active region, a dielectric layer on sidewalls of the p-contact layer and the active region, and an n-contact layer in physical contact with at least a portion of sidewalls of the layer of the second semiconductor material.
    Type: Application
    Filed: December 30, 2020
    Publication date: June 30, 2022
    Inventors: Wei Sin TAN, Andrea PINOS, John Lyle WHITEMAN
  • Patent number: 11264427
    Abstract: An optoelectronic circuit including a substrate and display pixels, each display pixel having a first light-emitting diode adapted to emit a first radiation and a second light-emitting diode adapted to emit a second radiation, the first light-emitting diode having a planar structure and resting on the substrate and the second light-emitting diode having a tridimensional structure and resting on the first light-emitting diode or crossing at least partially through the first light-emitting diode.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: March 1, 2022
    Assignee: Aledia
    Inventors: Wei Sin Tan, Philippe Gilet, Zine Bouhamri, Pamela Rueda Fonseca
  • Publication number: 20210391500
    Abstract: Disclosed is an optoelectronic device including a substrate and at least two sub-pixels, each sub-pixel being adapted to emit a respective first radiation, the substrate, each sub-pixel including: at least one fin made of a first semiconductor material, the fin along a normal direction perpendicular to the substrate, each fin having a first lateral side; and a covering layer including one or several radiation-emitting layer, the covering layer extending on the first lateral side of each fin. The sub-pixels delimit a recess located between both sub-pixels, and a blocking structure being interposed between both sub-pixels in the recess, the blocking structure being adapted to prevent the first radiation emitted by a sub-pixel to reach the other sub-pixel through the blocking structure.
    Type: Application
    Filed: October 21, 2019
    Publication date: December 16, 2021
    Inventors: Pamela RUEDA FONSECA, Tiphaine DUPONT, Wei Sin TAN
  • Patent number: 10916579
    Abstract: An optoelectronic device including light-emitting diodes (LED), each light-emitting diode including a semiconductor element corresponding to a nanowire, a microwire, and/or a nanometer- or micrometer-range pyramidal structure, and a shell at least partially covering the semiconductor element and adapted to emit a radiation and for each light-emitting diode, a photoluminescent coating including a single quantum well, multiple quantum wells or an heterostructure, covering at least part of the shell and in contact with the shell or with the semiconductor element and adapted to convert by optical pumping the radiation emitted by the shell into another radiation.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: February 9, 2021
    Assignee: Aledia
    Inventors: Wei Sin Tan, Philippe Gilet
  • Patent number: 10916580
    Abstract: A method of manufacturing an optoelectronic device, comprising the successive steps of: providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; forming a stack of semiconductor layers on the first face, said stack including third and fourth opposite faces, the fourth face being on the side of the substrate, said stack including light-emitting diodes; forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate; forming conductive pads on the fourth face in at least some of the openings in contact with the stack; and forming photoluminescent blocks in at least some of the openings.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: February 9, 2021
    Assignee: Aledia
    Inventors: Zheng-Sung Chio, Wei Sin Tan, Vincent Beix, Philippe Gilet, Pierre Tchoulfian
  • Publication number: 20200373461
    Abstract: An emitter adapted to emit a first radiation, said emitter having a substrate, and a mesa made of a first semiconductor material having a first bandgap value. The mesa has a superior side and a lateral side. A covering layer has one or several radiation-emitting layer(s) made of a second semiconductor material having a second bandgap value strictly inferior to the first bandgap value. Each radiation-emitting layer has a first portion corresponding to the superior side and a second portion corresponding to the lateral side. A first thickness is defined for the first portion and a second thickness is defined for the second portion, the second thickness being strictly inferior to the first thickness.
    Type: Application
    Filed: February 6, 2019
    Publication date: November 26, 2020
    Applicant: Aledia Parc'd Enterprises
    Inventors: Wei Sin TAN, Pamela Rueda FONSECA, Philippe GILET
  • Publication number: 20200357844
    Abstract: An optoelectronic circuit including a substrate and display pixels, each display pixel having a first light-emitting diode adapted to emit a first radiation and a second light-emitting diode adapted to emit a second radiation, the first light-emitting diode having a planar structure and resting on the substrate and the second light-emitting diode having a tridimensional structure and resting on the first light-emitting diode or crossing at least partially through the first light-emitting diode.
    Type: Application
    Filed: June 21, 2018
    Publication date: November 12, 2020
    Applicant: Aledia
    Inventors: Wei Sin Tan, Philippe Gilet, Zine Bouhamri, Pamela Rueda Fonseca
  • Publication number: 20200300422
    Abstract: An optoelectronic device including comprising including including light-emitting components, each light-emitting component being adapted to emit a first radiation at a first wavelength, and photoluminescent blocks, each photoluminescent block facing at least one light-emitting component and comprising a single quantum well or multiple quantum wells, photoluminescent blocks being divided into first photoluminescent blocks adapted to convert by optical pumping the first radiation into a second radiation at a second wavelength, second photoluminescent blocks adapted to convert by optical pumping the first radiation into a third radiation at a third wavelength and third photoluminescent blocks adapted to convert by optical pumping the first radiation into a fourth radiation at a fourth wavelength.
    Type: Application
    Filed: December 28, 2017
    Publication date: September 24, 2020
    Applicant: Aledia
    Inventors: Wei Sin Tan, Philippe Gilet
  • Patent number: 10734442
    Abstract: A method of manufacturing an optoelectronic device, comprising the successive steps of: a) providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; b) forming light-emitting diodes on the substrate, each light-emitting diode comprising a semiconductor microwire or nanowire covered by a shell; c) forming an encapsulation layer surrounding the light-emitting diodes; d) forming conductive pads on the encapsulation layer, on the side of the encapsulation layer opposite to the substrate, in contact with the light-emitting diodes; and e) forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: August 4, 2020
    Assignee: Aledia
    Inventors: Zheng-Sung Chio, Wei Sin Tan, Vincent Beix, Philippe Gilet, Pierre Tchoulfian
  • Publication number: 20200161285
    Abstract: An optoelectronic device including: a first circuit including a substrate having first and second opposite faces, the first circuit having display pixels, each display pixel having, on the side of the first face, a first light-emitting diode having a first active region adapted to emit a first radiation and, extending from the second face, a second light-emitting diode having a second active region adapted to emit a second radiation, the surface area, viewed from a direction orthogonal to the first face, of the first active region being at least twice as big as the surface area, viewed from the direction, of the second active region; and a second circuit bonded to the first circuit on the side of the first light-emitting diode and electrically linked to the first and second light-emitting diodes.
    Type: Application
    Filed: June 21, 2018
    Publication date: May 21, 2020
    Applicant: Aledia
    Inventors: Wei Sin Tan, Philippe Gilet, Eric Pourquier, Zine Bouhamri, Pamela Rueda Fonseca
  • Publication number: 20190333963
    Abstract: A method of manufacturing an optoelectronic device, comprising the successive steps of: a) providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; b) forming light-emitting diodes on the substrate, each light-emitting diode comprising a semiconductor microwire or nanowire covered by a shell; c) forming an encapsulation layer surrounding the light-emitting diodes; d) forming conductive pads on the encapsulation layer, on the side of the encapsulation layer opposite to the substrate, in contact with the light-emitting diodes; and e) forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate.
    Type: Application
    Filed: December 28, 2017
    Publication date: October 31, 2019
    Applicant: Aledia
    Inventors: Zheng-Sung Chio, Wei Sin Tan, Vincent Beix, Philippe Gilet, Pierre Tchoulfian
  • Publication number: 20190326351
    Abstract: A method of manufacturing an optoelectronic device, comprising the successive steps of: providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; forming a stack of semiconductor layers on the first face, said stack including third and fourth opposite faces, the fourth face being on the side of the substrate, said stack including light-emitting diodes; forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate; forming conductive pads on the fourth face in at least some of the openings in contact with the stack; and forming photoluminescent blocks in at least some of the openings.
    Type: Application
    Filed: December 28, 2017
    Publication date: October 24, 2019
    Applicant: Aledia
    Inventors: Zheng-Sung Chio, Wei Sin Tan, Vincent Beix, Philippe Gilet, Pierre Tchoulfian
  • Publication number: 20190319066
    Abstract: An optoelectronic device including light-emitting diodes (LED), each light-emitting diode including a semiconductor element corresponding to a nanowire, a microwire, and/or a nanometer- or micrometer-range pyramidal structure, and a shell at least partially covering the semiconductor element and adapted to emit a radiation and for each light-emitting diode, a photoluminescent coating including a single quantum well, multiple quantum wells or an heterostructure, covering at least part of the shell and in contact with the shell or with the semiconductor element and adapted to convert by optical pumping the radiation emitted by the shell into another radiation.
    Type: Application
    Filed: December 28, 2017
    Publication date: October 17, 2019
    Applicant: Aledia
    Inventors: Wei Sin Tan, Philippe Gilet
  • Publication number: 20130009167
    Abstract: A light emitting diode is provided which includes an active region in combination with a current spreading layer; and a crystalline epitaxial film light extraction layer in contact with the current spreading layer, the light extraction layer being patterned with nano/micro structures which increase extraction of light emitted from the active region.
    Type: Application
    Filed: July 6, 2011
    Publication date: January 10, 2013
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Wei-Sin TAN, Alistair Paul CURD, Valerie BERRYMAN-BOUSQUET
  • Patent number: 8314439
    Abstract: A light emitting diode (LED) is provided along with a method of making the same. The LED includes a conductive n-type region formed on a substrate; an active region formed on the n-type region; a first p-type region formed on the active region; a plurality of nanostructures formed on the first p-type region to carry out light extraction from the active region, the nanostructures having a diameter less than 500 nm; a second p-type region regrown on the first p-type region to form a non-planar surface in combination with the nanostructures; and a p-type electrode formed on the non-planar surface.
    Type: Grant
    Filed: February 11, 2011
    Date of Patent: November 20, 2012
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Wei-Sin Tan, Alistair Paul Curd, Valerie Berryman-Bousquet
  • Patent number: 8258524
    Abstract: A light emitting diode device which includes at least one light emitting diode, a heat-sink chassis having a surface upon which the at least one light emitting diode is mounted, and a waveguide having one end coupled to the at least one light emitting diode for receiving light therefrom. The waveguide has another end which includes a light extraction and redistribution region, and the waveguide is configured to guide light received from the at least one light emitting diode away from the heat-sink chassis and towards the light extraction and redistribution region. The light extraction and redistribution region is configured to extract and redistribute the light from the waveguide.
    Type: Grant
    Filed: January 26, 2010
    Date of Patent: September 4, 2012
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Wei-Sin Tan, Valerie Berryman-Bousquet, Tong Zhang, Jonathan Heffernan
  • Publication number: 20120205692
    Abstract: A light emitting diode (LED) is provided along with a method of making the same. The LED includes a conductive n-type region formed on a substrate; an active region formed on the n-type region; a first p-type region formed on the active region; a plurality of nanostructures formed on the first p-type region to carry out light extraction from the active region, the nanostructures having a diameter less than 500 nm; a second p-type region regrown on the first p-type region to form a non-planar surface in combination with the nanostructures; and a p-type electrode formed on the non-planar surface.
    Type: Application
    Filed: February 11, 2011
    Publication date: August 16, 2012
    Inventors: Wei-Sin TAN, Alistair Paul Curd, Valerie Berryman-Bousquet
  • Publication number: 20120068196
    Abstract: A semiconductor light-emitting device comprises a semiconductor layer structure disposed over a substrate. The layer structure includes an active region disposed between a first layer and a second layer. One or more cavities are present in the layer structure, each cavity being coincident with a threading dislocation and extending from an upper surface of the layer structure through at least the second layer and the active region. Removing material where a threading dislocation is present provides effective suppression of the tendency of the threading dislocations to act as non-radiative centres, thereby improving the light output efficiency of the device. The device may be manufactured by a first step of selectively etching the layer structure at the locations of one or more threading dislocation to form a pilot cavity at the or each location. A second etching step is applied to increase the depth of each pilot cavity.
    Type: Application
    Filed: September 9, 2011
    Publication date: March 22, 2012
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Tim Michael SMEETON, Mathieu Xavier SENES, Wei-Sin TAN, Valerie BERRYMAN-BOUSQUET