Patents by Inventor Wei T. LEE

Wei T. LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240085174
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.
    Type: Application
    Filed: August 21, 2023
    Publication date: March 14, 2024
    Applicant: NOVA MEASURING INSTRUMENTS INC.
    Inventors: Heath POIS, Wei T LEE, Lawrence BOT, Michael KWAN, Mark KLARE, Charles LARSON
  • Publication number: 20240067752
    Abstract: The present invention provides anti-HtrA1 antibodies (including bispecific anti-HtrA1 anti-Factor D antibodies) and methods of making and using the same, for example, in methods of treating HtrA1-associated disorders, ocular disorders, and/or complement-associated disorders.
    Type: Application
    Filed: September 26, 2023
    Publication date: February 29, 2024
    Inventors: Robert F. KELLEY, Daniel K. KIRCHHOFER, Joyce LAI, Chingwei V. LEE, Wei-Ching LIANG, Michael T. LIPARI, Kelly M. LOYET, Tao SAI, Menno VAN LOOKEREN CAMPAGNE, Yan WU, Germaine FUH
  • Publication number: 20240044825
    Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.
    Type: Application
    Filed: June 19, 2023
    Publication date: February 8, 2024
    Applicant: NOVA MEASURING INSTRUMENTS INC.
    Inventors: Charles LARSON, Kavita SHAH, Wei T. LEE
  • Patent number: 11733035
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.
    Type: Grant
    Filed: June 8, 2021
    Date of Patent: August 22, 2023
    Assignee: NOVA MEASURING INSTRUMENTS INC.
    Inventors: Heath Pois, Wei T Lee, Lawrence Bot, Michael Kwan, Mark Klare, Charles Larson
  • Patent number: 11680915
    Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.
    Type: Grant
    Filed: May 30, 2022
    Date of Patent: June 20, 2023
    Assignee: NOVA MEASURING INSTRUMENTS, INC.
    Inventors: Charles Larson, Kavita Shah, Wei T Lee
  • Publication number: 20230021209
    Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.
    Type: Application
    Filed: May 30, 2022
    Publication date: January 19, 2023
    Applicant: NOVA MEASURING INSTRUMENTS INC.
    Inventors: Charles LARSON, Kavita SHAH, Wei T LEE
  • Publication number: 20210372787
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.
    Type: Application
    Filed: June 8, 2021
    Publication date: December 2, 2021
    Applicant: NOVA MEASURING INSTRUMENTS INC.
    Inventors: Heath POIS, Wei T. LEE, Lawrence BOT, Michael KWAN, Mark KLARE, Charles LARSON