Abstract: An embodiment is a method including forming a raised portion of a substrate, forming fins on the raised portion of the substrate, forming an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins, forming a gate structure over the fins, and forming source/drain regions on opposing sides of the gate structure, wherein forming the source/drain regions includes epitaxially growing a first epitaxial layer on the fin adjacent the gate structure, etching back the first epitaxial layer, epitaxially growing a second epitaxial layer on the etched first epitaxial layer, and etching back the second epitaxial layer, the etched second epitaxial layer having a non-faceted top surface, the etched first epitaxial layer and the etched second epitaxial layer forming source/drain regions.

Abstract: An embodiment is a method including forming a raised portion of a substrate, forming fins on the raised portion of the substrate, forming an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins, forming a gate structure over the fins, and forming source/drain regions on opposing sides of the gate structure, wherein forming the source/drain regions includes epitaxially growing a first epitaxial layer on the fin adjacent the gate structure, etching back the first epitaxial layer, epitaxially growing a second epitaxial layer on the etched first epitaxial layer, and etching back the second epitaxial layer, the etched second epitaxial layer having a non-faceted top surface, the etched first epitaxial layer and the etched second epitaxial layer forming source/drain regions.

Abstract: In an approach, a processor determines respective resolution levels for a plurality of objects, presented in a video segment to be rendered, based on a relationship between a primary object and at least one remaining object of the plurality of objects. A processors, determines, from the video segment, a plurality of object-based video elements at the determined respective resolution levels, each of the plurality of object-based video elements corresponding to one of the plurality of objects. A processor causes the plurality of object-based video elements to be delivered for rendering the video segment.

Abstract: An embodiment is a method including forming a raised portion of a substrate, forming fins on the raised portion of the substrate, forming an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins, forming a gate structure over the fins, and forming source/drain regions on opposing sides of the gate structure, wherein forming the source/drain regions includes epitaxially growing a first epitaxial layer on the fin adjacent the gate structure, etching back the first epitaxial layer, epitaxially growing a second epitaxial layer on the etched first epitaxial layer, and etching back the second epitaxial layer, the etched second epitaxial layer having a non-faceted top surface, the etched first epitaxial layer and the etched second epitaxial layer forming source/drain regions.

Abstract: A picture is obtained. The picture is intended to be compressed in a video stream. The picture includes pixel data that depicts a scene. A subject in the pixel data that depicts the scene is identified. The identification is based on the pixel data included in the picture. A plurality of object data is generated. The generated object data is related to the subject. The generation is based on the identification of the subject. An intended compression format of the pictured to be compressed in the video stream is determined. A pixel operation on the picture is performed. The performance is based on the determination of the intended compression format and before compression of the picture. The generated plurality of object data is related with the picture after compression of the picture.

Abstract: In an approach for smart collaboration, a plurality of images are received. Each image of the plurality of images is from a different device of a plurality of devices. The plurality of images are combined into a single combined image. The combined image is transferred to the plurality of devices.

Abstract: A picture is obtained. The picture is intended to be compressed in a video stream. The picture includes pixel data that depicts a scene. A subject in the pixel data that depicts the scene is identified. The identification is based on the pixel data included in the picture. A plurality of object data is generated. The generated object data is related to the subject. The generation is based on the identification of the subject. An intended compression format of the pictured to be compressed in the video stream is determined. A pixel operation on the picture is performed. The performance is based on the determination of the intended compression format and before compression of the picture. The generated plurality of object data is related with the picture after compression of the picture.

Abstract: The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device includes forming an active area on a substrate. The active area includes a source/drain region. The formation of the source/drain region includes forming a barrier region along a bottom surface and side surface of a recess in the active area. The barrier region includes arsenic having a first dopant concentration. The formation of the source/drain region further includes forming an epitaxial material on the barrier region in the recess. The epitaxial material includes phosphorous having a second dopant concentration.

Abstract: In an approach for smart collaboration, a plurality of images are received. Each image of the plurality of images is from a different device of a plurality of devices. The plurality of images are combined into a single combined image. The combined image is transferred to the plurality of devices.

Abstract: An embodiment is a method including forming a raised portion of a substrate, forming fins on the raised portion of the substrate, forming an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins, forming a gate structure over the fins, and forming source/drain regions on opposing sides of the gate structure, wherein forming the source/drain regions includes epitaxially growing a first epitaxial layer on the fin adjacent the gate structure, etching back the first epitaxial layer, epitaxially growing a second epitaxial layer on the etched first epitaxial layer, and etching back the second epitaxial layer, the etched second epitaxial layer having a non-faceted top surface, the etched first epitaxial layer and the etched second epitaxial layer forming source/drain regions.

Abstract: The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device includes forming an active area on a substrate. The active area includes a source/drain region. The formation of the source/drain region includes forming a barrier region along a bottom surface and side surface of a recess in the active area. The barrier region includes arsenic having a first dopant concentration. The formation of the source/drain region further includes forming an epitaxial material on the barrier region in the recess. The epitaxial material includes phosphorous having a second dopant concentration.

Abstract: An embodiment is a method including forming a raised portion of a substrate, forming fins on the raised portion of the substrate, forming an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins, forming a gate structure over the fins, and forming source/drain regions on opposing sides of the gate structure, wherein forming the source/drain regions includes epitaxially growing a first epitaxial layer on the fin adjacent the gate structure, etching back the first epitaxial layer, epitaxially growing a second epitaxial layer on the etched first epitaxial layer, and etching back the second epitaxial layer, the etched second epitaxial layer having a non-faceted top surface, the etched first epitaxial layer and the etched second epitaxial layer forming source/drain regions.

Abstract: The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device includes forming an active area on a substrate. The active area includes a source/drain region. The formation of the source/drain region includes forming a barrier region along a bottom surface and side surface of a recess in the active area. The barrier region includes arsenic having a first dopant concentration. The formation of the source/drain region further includes forming an epitaxial material on the barrier region in the recess. The epitaxial material includes phosphorous having a second dopant concentration.

Abstract: The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device includes forming an active area on a substrate. The active area includes a source/drain region. The formation of the source/drain region includes forming a barrier region along a bottom surface and side surface of a recess in the active area. The barrier region includes arsenic having a first dopant concentration. The formation of the source/drain region further includes forming an epitaxial material on the barrier region in the recess. The epitaxial material includes phosphorous having a second dopant concentration.

Abstract: An embodiment is a method including forming a raised portion of a substrate, forming fins on the raised portion of the substrate, forming an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins, forming a gate structure over the fins, and forming source/drain regions on opposing sides of the gate structure, wherein forming the source/drain regions includes epitaxially growing a first epitaxial layer on the fin adjacent the gate structure, etching back the first epitaxial layer, epitaxially growing a second epitaxial layer on the etched first epitaxial layer, and etching back the second epitaxial layer, the etched second epitaxial layer having a non-faceted top surface, the etched first epitaxial layer and the etched second epitaxial layer forming source/drain regions.

Abstract: A method for handling a plurality of instant message delivery media to a user of a mobile device is provided. The method may include detecting at least one instant message to be delivered to a recipient-user on the mobile device. The method may also include determining if a plurality of predefined conditions have been configured by the recipient-user. The method may further include displaying the at least one instant message to the recipient-user in accordance with the plurality of predefined conditions configured by the recipient-user.

Abstract: A method for handling a plurality of instant message delivery media to a user of a mobile device is provided. The method may include detecting at least one instant message to be delivered to a recipient-user on the mobile device. The method may also include determining if a plurality of predefined conditions have been configured by the recipient-user. The method may further include displaying the at least one instant message to the recipient-user in accordance with the plurality of predefined conditions configured by the recipient-user.

Abstract: An embodiment is a method including forming a raised portion of a substrate, forming fins on the raised portion of the substrate, forming an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins, forming a gate structure over the fins, and forming source/drain regions on opposing sides of the gate structure, wherein forming the source/drain regions includes epitaxially growing a first epitaxial layer on the fin adjacent the gate structure, etching back the first epitaxial layer, epitaxially growing a second epitaxial layer on the etched first epitaxial layer, and etching back the second epitaxial layer, the etched second epitaxial layer having a non-faceted top surface, the etched first epitaxial layer and the etched second epitaxial layer forming source/drain regions.

Abstract: A method for translating a webpage includes receiving an HTML package comprising one or more HTML files and one or more corresponding program integrated information (PII) files, identifying elements corresponding to the one or more HTML files to be translated into a target language, creating a mapping file corresponding to the identified elements, wherein the mapping file indicates a PII file to which each identified element corresponds as well as context information corresponding to each PII file, translating the PII files indicated by the mapping file into a target language to provide translated PII files, and replacing untranslated PII files in the HTML package with corresponding translated PII files to provide a translated package.

Abstract: In an approach for storing frames of a video, a computer divides a video into one or more frames. The computer identifies a frame type associated with an individual frame within the divided one or more frames, wherein the identified frame type includes one of the following: an I-frame, a B-frame, and a P-frame. The computer stores the individual frame within a corresponding storage location based on the associated identified frame type.