Wei-The CHIEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: A display device and a method for operating a display device disclosed herein include transmitting a proximity signal from a proximity sensor, the proximity sensor being positioned under a lower surface of a surface layer with an illumination component being positioned between the surface layer and the proximity sensor, in response to the illumination component being deactivated, receiving a reflected proximity signal based on the proximity signal, determining a proximity value based on the reflected proximity signal and modifying an operation of the display device based on the proximity value.
August 8, 2022
December 1, 2022
Vishay Semiconductor GmbH
Cheng Chieh HUANG, Wei Chien WANG, Yu Hao KAO
Abstract: A method includes forming a first conductive feature, depositing a graphite layer over the first conductive feature, patterning the graphite layer to form a graphite conductive feature, depositing a dielectric spacer layer on the graphite layer, depositing a first dielectric layer over the dielectric spacer layer, planarizing the first dielectric layer, forming a second dielectric layer over the first dielectric layer, and forming a second conductive feature in the second dielectric layer. The second conductive feature is over and electrically connected to the graphite conductive feature.
Abstract: A parking management method includes detecting whether there is a vehicle approaching a parking management device in a parking space, capturing images of the vehicle when the vehicle is detected approaching the parking management device, identifying feature information of the vehicle in the captured images, determining whether the vehicle matches the parking space according to the feature information, controlling a lifting mechanism to change from a raised state to a lowered state when the vehicle matches the parking space, and establishing a pairing connection between the parking management device and a mobile terminal.
Abstract: A pixel circuit and a display device are provided. The pixel circuit is utilized for driving a light emitting diode. The pixel circuit includes a storage capacitor, a selector, a memory device, and a write switch. The storage capacitor is coupled to the light emitting diode. The selector selects a first signal or a second signal to the storage capacitor according to a stored data. The memory device is coupled to the selector. The memory device stores a written data to obtain the stored data. The write switch is coupled to the memory device. The write switch writes in the written data to the memory device while the pixel circuit is in transition of operation modes.
Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.
Abstract: An integrated circuit device includes a first power rail, a first active area extending in a first direction, and a plurality of gates contacting the first active area and extending in a second direction perpendicular to the first direction. A first transistor includes the first active area and a first one of the gates. The first transistor has a first threshold voltage (VT). A second transistor includes the first active area and a second one of the gates. The second transistor has a second VT different than the first VT. A tie-off transistor is positioned between the first transistor and the second transistor, and includes the first active area and a third one of the gates, wherein the third gate is connected to the first power rail.
Abstract: Registered, first unregistered, and second unregistered encodings are generated for registered images of content, first unregistered images of the content, and second unregistered images of different content, respectively. First and second distance matrices having rows respectively corresponding to the first and second unregistered encodings are generated based on the registered encodings and the first and second unregistered encodings, respectively. A statistic is selected having a greatest difference between first and second distance vectors having values corresponding to the rows of the first and second distance matrices, respectively. Whether content of a new unregistered image corresponds to the content of the registered images is assessed by using the selected statistic.
April 23, 2021
October 27, 2022
Pei-Yuan Chien, Hong-Wei Chou, Peter Zhang
Abstract: A flash memory control method, a flash memory storage device and a flash memory controller are provided. The method includes the following. A flash memory module is instructed to perform a data merge operation to copy first data in a first physical unit into at least one second physical unit. After the first data is copied and before the first physical unit is erased, another programming operation is performed on the first physical unit to change a data storage state of at least a part of memory cells in the first physical unit from a first state into a second state. After the first physical unit is programmed, an erase operation is performed on the first physical unit.
Abstract: A light emitting package structure includes a light emitting unit, a reflective layer, a reflective element and an optical layer. The light emitting unit has a top surface, a bottom surface and sidewall surfaces. The bottom surface and the top surface are opposing to each other. The sidewall surfaces are between the top surface and the bottom surface. The light emitting unit further has an electrode portion on the bottom surface. The reflective layer encloses the sidewall surfaces of the light emitting unit. The reflective element is disposed on the light emitting unit and the reflective layer. The optical layer includes a phosphor layer, a light diffusion layer or a combination thereof. The optical layer is disposed between the top surface of the light emitting unit and the reflective element.
Abstract: Various embodiments of the present disclosure are directed towards an image sensor device including a first image sensor element and a second image sensor element disposed within a substrate. An interconnect structure is disposed along a front-side surface of the substrate and comprises a plurality of conductive wires, a plurality of conductive vias, and a first absorption structure. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second image sensor element is configured to generate electrical signals from the electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. The second image sensor element is laterally adjacent to the first image sensor element. Further, the first image sensor element overlies the first absorption structure and is spaced laterally between opposing sidewalls of the first absorption structure.
Abstract: An integrated stage for holding rapid test reagent cards includes two U-shaped sidewalls opposite to each other, a first receiving space, a second receiving space, and an elastic sheet. The U-shaped sidewalls cooperatively define the first receiving space. The second receiving space is formed in the first receiving space and is lower than the first receiving space. The elastic sheet is arranged on a short side of the first receiving space. The first receiving space is used for allowing the integrated stage to hold a first rapid test reagent card. The second receiving space is used for allowing the integrated stage to hold a second rapid test reagent card. The integrated stage utilizes the elastic sheet to hold and fix the first rapid test reagent card or the second rapid test reagent card.
November 18, 2020
Date of Patent:
October 4, 2022
NATIONAL CHENG KUNG UNIVERSITY
Yu-Cheng Lin, Wei-Chien Weng, Kai-Wen Lin
Abstract: A warning triangle structure includes a base, a triangle, a number of connecting rods, and a braking device. The triangle includes a bottom end and a top end opposite the bottom end. The bottom end is fixedly mounted to the base. Each of the connecting rods includes a first end and a second end. The first end is fixedly coupled to the base, and the second end is mounted with a rotatable support wheel. The braking device is installed at the second end of at least one of the connecting rods. The braking device includes a transmission shaft coupled to the support wheel. The braking device controls the support wheel to stop rotating by stopping the transmission shaft from rotating.
Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.
Abstract: A semiconductor structure includes a fin disposed on a substrate, the fin including a channel region comprising a plurality of channels vertically stacked over one another, the channels comprising germanium distributed therein. The semiconductor structure further includes a gate stack engaging the channel region of the fin and gate spacers disposed between the gate stack and the source and drain regions of the fin, wherein each channel of the channels includes a middle section wrapped around by the gate stack and two end sections engaged by the gate spacers, wherein a concentration of germanium in the middle section of the channel is higher than a concentration of germanium in the two end sections of the channel, and wherein the middle section of the channel further includes a core portion and an outer portion surrounding the core portion with a germanium concentration profile from the core portion to the outer portion.
Abstract: A projection system is provided, which includes multiple projection devices. The projection devices are configured to generate multiple projection images. Each of the projection images partially overlaps with at least one of the adjacent projection images. In a viewing direction, aspect ratios of the projection images are all greater than 1 or less than 1. A projection direction of one of the projection devices is not parallel to a projection direction of another one of the projection devices. A stitching method of the projection images is further provided. The projection system and the stitching method of the projection images provided by the disclosure have a better effect of the projection images.
Abstract: Disclosed methods include placing a semiconductor wafer containing MRAM devices into a first magnetic field that has a magnitude sufficient to magnetically polarize MRAM bits and has a substantially uniform field strength and direction over the entire area of the wafer. The method further includes placing the wafer in a second magnetic field having an opposite field direction, a substantially uniform field strength and direction over the entire area of the wafer, and magnitude less than a design threshold for MRAM bit magnetization reversal. The method further includes determining a presence of malfunctioning MRAM bits by determining that such malfunctioning MRAM bits have a magnetic polarization that was reversed due to exposure to the second magnetic field. Malfunctioning MRAM bits may further be characterized by electrically reading data bits, or by using a chip probe to read one or more of voltage, current, resistances, etc., of the MRAM devices.
Abstract: A memory control method, a memory storage device, and a memory control circuit unit are provided. The memory control method includes: programming multiple first memory cells in a first physical erasing unit in a rewritable non-volatile memory module; and applying an electronic pulse to at least one word line in the rewritable non-volatile memory module. The at least one word line is coupled to multiple second memory cells in the first physical erasing unit. The second memory cells include the first memory cells. The electronic pulse is not configured to read, program, or erase the second memory cells.
Abstract: A light source module, including a substrate, a plurality of light-emitting elements, and a quantum dot film is provided. The substrate has a bearing surface, and the plurality of light-emitting elements is disposed on the bearing surface. Each light-emitting element includes a first light-emitting chip and a second light-emitting chip. The first light-emitting chip is adapted to emit blue light. The second light-emitting chip is disposed beside the first light-emitting chip and is adapted to emit red light. The quantum dot film is disposed on the bearing surface, and adapted to convert blue light into green light. The plurality of light-emitting elements is located between the substrate and the quantum dot film. A display device of the invention is further provided.
Abstract: A wafer stage includes an area for receiving a wafer. The wafer stage further includes a first sensor outside of the area for receiving the wafer. The wafer stage further includes a second sensor outside of the area of receiving the wafer, wherein the second sensor is spaced from the first sensor. The wafer stage further includes a first particle capture area outside of the area for receiving the wafer, wherein the first particle capture area is spaced from both the first sensor and the second sensor, a dimension of the first particle capture area in a first direction parallel to a top surface of the wafer stage is at least 26 millimeters (mm), a dimension of the first particle capture area in a second direction parallel to the top surface of the wafer stage is at least 33 mm, and the second direction is perpendicular to the first direction.
June 3, 2022
September 15, 2022
Yung-Yao LEE, Wei Chih LIN, Chih Chien LIN
Abstract: A multi-layer reflective structure is disposed over the substrate. An amorphous capping layer is disposed over the multi-layer reflective structure. The amorphous capping layer may contain ruthenium, oxygen, niobium, nitrogen, tantalum, or zirconium. An amorphous layer may also be disposed between the multi-layer reflective structure and the amorphous capping layer. The amorphous layer includes amorphous silicon, amorphous silicon oxide, or amorphous silicon nitride.