Patents by Inventor Wei Ti Lee
Wei Ti Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 12281893Abstract: A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.Type: GrantFiled: May 17, 2024Date of Patent: April 22, 2025Assignee: NOVA MEASURING INSTRUMENTS INC.Inventors: Heath Pois, Wei Ti Lee, Laxmi Warad, Dmitry Kislitsyn, Parker Lund, Benny Tseng, James Chen, Saurabh Singh
-
Publication number: 20250052704Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).Type: ApplicationFiled: August 19, 2024Publication date: February 13, 2025Applicant: NOVA MEASURING INSTRUMENTS INC.Inventors: Wei Ti LEE, Heath POIS, Mark KLARE, Cornel BOZDOG
-
Publication number: 20240401940Abstract: A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.Type: ApplicationFiled: May 17, 2024Publication date: December 5, 2024Applicant: NOVA MEASURING INSTRUMENTS INC.Inventors: Heath POIS, Wei Ti LEE, Laxmi WARAD, Dmitry Kislitsyn, Parker Lund, Benny Tseng, James CHEN, Saurabh Singh
-
Patent number: 12066391Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).Type: GrantFiled: June 5, 2023Date of Patent: August 20, 2024Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
-
Patent number: 11997932Abstract: Resistive switching memory cells having filament-based switching mechanisms are provided. By way of example, resistive switching memory cells having resistive filaments constrained to a core of the cell are disclosed. In other examples, methods for fabricating resistive switching memory cells to constrain a conductive filament formed in the resistive switching memory cell to a central portion of core of the cell are disclosed.Type: GrantFiled: March 31, 2021Date of Patent: May 28, 2024Assignee: CROSSBAR, INC.Inventors: Sundar Narayanan, Wee Chen Gan, Natividad Vasquez, Jr., Wei Ti Lee
-
Patent number: 11988502Abstract: A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.Type: GrantFiled: October 24, 2022Date of Patent: May 21, 2024Assignee: NOVA MEASURING INSTRUMENTS INC.Inventors: Heath Pois, Wei Ti Lee, Laxmi Warad, Dmitry Kislitsyn, Parker Lund, Benny Tseng, James Chen, Saurabh Singh
-
Patent number: 11906451Abstract: A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer.Type: GrantFiled: September 20, 2021Date of Patent: February 20, 2024Assignees: Nova Ltd., GLOBALFOUNDRIES U.S. INC.Inventors: Wei Ti Lee, Heath A. Pois, Mark Klare, Cornel Bozdog, Alok Vaid
-
Publication number: 20230408430Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).Type: ApplicationFiled: June 5, 2023Publication date: December 21, 2023Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
-
Publication number: 20230288196Abstract: A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.Type: ApplicationFiled: October 24, 2022Publication date: September 14, 2023Applicant: NOVA MEASURING INSTRUMENTS INC.Inventors: Heath POIS, Wei Ti LEE, Laxmi WARAD, Dmitry Kislitsyn, Parker Lund, Benny Tseng, James CHEN, Saurabh Singh
-
Patent number: 11668663Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).Type: GrantFiled: January 13, 2020Date of Patent: June 6, 2023Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
-
Publication number: 20220320431Abstract: Two-terminal resistive switching devices can have a switching layer in which a filament forms and deforms to varying degrees to represent distinct logical states. This switching layer can be formed having a varying ratio, X, of nitrogen to silicon at various strata of the switching layer. Such can result in a two-terminal memory device with improved stability and other characteristics.Type: ApplicationFiled: March 31, 2021Publication date: October 6, 2022Inventors: Sundar Narayanan, Yunyu Wang, Zhen Gu, Wee Chen Gan, Wei Ti Lee, Xiesen Yang
-
Publication number: 20220320432Abstract: Resistive switching memory cells having filament-based switching mechanisms are provided. By way of example, resistive switching memory cells having resistive filaments constrained to a core of the cell are disclosed. In other examples, methods for fabricating resistive switching memory cells to constrain a conductive filament formed in the resistive switching memory cell to a central portion of core of the cell are disclosed.Type: ApplicationFiled: March 31, 2021Publication date: October 6, 2022Inventors: Sundar Narayanan, Wee Chen Gan, Natividad Vasquez, JR., Wei Ti Lee
-
Patent number: 11346795Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.Type: GrantFiled: October 9, 2020Date of Patent: May 31, 2022Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Charles Thomas Larson, Kavita Shah, Wei Ti Lee
-
Patent number: 11295969Abstract: A computer-implemented method for measuring a parameter of a semiconductor. A non-limiting example of the computer-implemented method includes receiving, using a processor, a raw signal from a first tool representing a measured parameter of a semiconductor device. The method also receives, using the processor, data on the measured parameter from a second tool, and calculates, using the processor, the measured parameter based on the data received from the second tool and on a constraint based on the raw signal from the first tool.Type: GrantFiled: November 27, 2018Date of Patent: April 5, 2022Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Gangadhara Raja Muthinti, Matthew Sendelbach, Roy Koret, Aron Cepler, Wei Ti Lee
-
Patent number: 11029148Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.Type: GrantFiled: May 12, 2020Date of Patent: June 8, 2021Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
-
Publication number: 20210025839Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.Type: ApplicationFiled: October 9, 2020Publication date: January 28, 2021Inventors: Charles Thomas Larson, Kavita Shah, Wei Ti Lee
-
Publication number: 20200370885Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.Type: ApplicationFiled: May 12, 2020Publication date: November 26, 2020Inventors: Heath A. Pois, Wei Ti Lee, Lawrence V. Bot, Michael C. Kwan, Mark Klare, Charles Thomas Larson
-
Patent number: 10801978Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.Type: GrantFiled: March 12, 2019Date of Patent: October 13, 2020Assignee: NOVA MEASURING INSTRUMENTS, INC.Inventors: Charles Thomas Larson, Kavita Shah, Wei Ti Lee
-
Publication number: 20200191734Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).Type: ApplicationFiled: January 13, 2020Publication date: June 18, 2020Inventors: Wei Ti Lee, Heath Pois, Mark Klare, Cornel Bozdog
-
Publication number: 20200168489Abstract: A computer-implemented method for measuring a parameter of a semiconductor. A non-limiting example of the computer-implemented method includes receiving, using a processor, a raw signal from a first tool representing a measured parameter of a semiconductor device. The method also receives, using the processor, data on the measured parameter from a second tool, and calculates, using the processor, the measured parameter based on the data received from the second tool and on a constraint based on the raw signal from the first tool.Type: ApplicationFiled: November 27, 2018Publication date: May 28, 2020Inventors: GANGADHARA RAJA MUTHINTI, Matthew Sendelbach, Roy Koret, Aron Cepler, Wei Ti Lee