Patents by Inventor Wei-Tien Shen

Wei-Tien Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11955338
    Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.
    Type: Grant
    Filed: January 30, 2023
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Chun Huang, Ya-Wen Yeh, Chien-Wen Lai, Wei-Liang Lin, Ya Hui Chang, Yung-Sung Yen, Ru-Gun Liu, Chin-Hsiang Lin, Yu-Tien Shen
  • Publication number: 20230062775
    Abstract: Embodiments provide a package substrate. The package substrate includes a substrate having a cavity hole therein, and a semiconductor device in the cavity hole. The semiconductor device has first terminal side and a second terminal side opposite to the first terminal side. The package substrate further includes a first redistribution structure on the first terminal side of the cavity substrate to electrically couple to a first pad and a second pad on the first terminal side of the semiconductor device; and a second redistribution structure on the second side of the cavity substrate to electrically couple to a third pad and fourth pad on the second terminal side of the semiconductor device.
    Type: Application
    Filed: August 30, 2021
    Publication date: March 2, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hungen Hsu, Wei-Tien Shen, Kuo-Ching Hsu