Patents by Inventor Wei-Ting Wang

Wei-Ting Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200373487
    Abstract: The present disclosure is directed to a method for the formation of resistive random-access memory (RRAM) structures with a low profile between or within metallization layers. For example, the method includes forming, on a substrate, a first metallization layer with conductive structures and a first dielectric layer abutting sidewall surfaces of the conductive structures; etching a portion of the first dielectric layer to expose a portion of the sidewall surfaces of the conductive structures; depositing a memory stack on the first metallization layer, the exposed portion of the sidewall surfaces, and a top surface of the conductive structures; patterning the memory stack to form a memory structure that covers the exposed portion of the sidewall surfaces and the top surface of the conductive structures; depositing a second dielectric layer to encapsulate the memory stack; and forming a second metallization layer on the second dielectric layer.
    Type: Application
    Filed: May 24, 2019
    Publication date: November 26, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei-Ming Wang, Chia-Wei Liu, Jen-Sheng Yang, Wen-Ting Chu, Yu-Wen Liao, Huei-Tzu Wang
  • Publication number: 20200370563
    Abstract: A centrifugal heat dissipation fan including a housing and an impeller is provided. The housing has at least one inlet and at least one outlet. The impeller is disposed in the housing and rotates about an axis. The inlet is located in an axial direction of the axis and corresponds to the impeller. The outlet is located in a radial direction relative to the axis. The inlet is divided into a compression section and a release section in the rotation direction of the impeller, and the compression section has a uniform first radial dimension relative to the axis. The release section has an extended second radial dimension relative to the axis, and the second radial dimension is greater than the first radial dimension.
    Type: Application
    Filed: April 27, 2020
    Publication date: November 26, 2020
    Applicant: Acer Incorporated
    Inventors: Tsung-Ting Chen, Wen-Neng Liao, Cheng-Wen Hsieh, Kuang-Hua Lin, Wei-Chin Chen, Chun-Chieh Wang
  • Patent number: 10847304
    Abstract: A structure includes an encapsulating material, and a coil including a through-conductor. The through-conductor is in the encapsulating material, with a top surface of the through-conductor coplanar with a top surface of the encapsulating material, and a bottom surface of the through-conductor coplanar with a bottom surface of the encapsulating material. A metal plate is underlying the encapsulating material. A slot is in the metal plate and filled with a dielectric material. The slot has a portion overlapped by the coil.
    Type: Grant
    Filed: September 10, 2018
    Date of Patent: November 24, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chuei-Tang Wang, Wei-Ting Chen, Chieh-Yen Chen, Hao-Yi Tsai, Ming Hung Tseng, Hung-Yi Kuo, Chen-Hua Yu
  • Publication number: 20200357506
    Abstract: Provided are a medical image analyzing system and a method thereof, which mainly crop a plurality of image patches from a processed image including a segmentation label corresponding to a location of an organ, train a deep learning model with the image patches to obtain prediction values, and plot a receiver operating characteristic curve to determine a threshold which determines whether the image patches are cancerous, thereby effectively improving the detection rate of cancer.
    Type: Application
    Filed: May 7, 2020
    Publication date: November 12, 2020
    Inventors: Wei-Chih Liao, Wei-Chung Wang, Kao-Lang Liu, Po-Ting Chen, Ting-Hui Wu, Holger Roth
  • Patent number: 10825853
    Abstract: A semiconductor image sensor device includes a semiconductor substrate, a radiation-sensing region, and a first isolation structure. The radiation-sensing region is in the semiconductor substrate. The first isolation structure is in the semiconductor substrate and adjacent to the radiation-sensing region. The first isolation structure includes a bottom isolation portion in the semiconductor substrate, an upper isolation portion in the semiconductor substrate, and a diffusion barrier layer surrounding a sidewall of the upper isolation portion.
    Type: Grant
    Filed: March 27, 2018
    Date of Patent: November 3, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yen-Ting Chiang, Chun-Yuan Chen, Hsiao-Hui Tseng, Sheng-Chan Li, Yu-Jen Wang, Wei Chuang Wu, Shyh-Fann Ting, Jen-Cheng Liu, Dun-Nian Yaung
  • Publication number: 20200343281
    Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a plurality of pixel regions disposed within a substrate and respectively comprising a photodiode configured to receive radiation that enters the substrate from a back-side. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions surrounding the photodiode. The BDTI structure extends from the back-side of the substrate to a first depth within the substrate. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel regions overlying the photodiode. The MDTI structure extends from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure is a continuous integral unit having a ring shape.
    Type: Application
    Filed: July 9, 2020
    Publication date: October 29, 2020
    Inventors: Wei Chuang Wu, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Jen-Cheng Liu, Yen-Ting Chiang, Chun-Yuan Chen, Shen-Hui Hong
  • Publication number: 20200333193
    Abstract: The surface temperature of a portable device is estimated. The portable device includes a sensor for detecting the internal temperature of the portable device. The portable device also includes circuitry for estimating the surface temperature, using the internal temperature and an ambient temperature of the portable device as input to a circuit model. The circuit model describes thermal behaviors of the portable device. The circuitry is operative to identify a scenario in which the portable device operates, and determine the ambient temperature using the scenario and at least the internal temperature.
    Type: Application
    Filed: July 3, 2020
    Publication date: October 22, 2020
    Inventors: Chi-Wen Pan, Pei-Yu Huang, Sheng-Liang Kuo, Jih-Ming Hsu, Tai-Yu Chen, Yun-Ching Li, Wei-Ting Wang
  • Patent number: 10796990
    Abstract: A semiconductor structure including at least one integrated circuit component is provided. The at least one integrated circuit component includes a first semiconductor substrate and a second semiconductor substrate electrically coupled to the first semiconductor substrate, wherein the first semiconductor substrate and the second semiconductor substrate are bonded through a first hybrid bonding interface, and at least one of the first semiconductor substrate or the second semiconductor substrate includes at least one first embedded capacitor.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: October 6, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Ting Chen, Chung-Hao Tsai, Chen-Hua Yu, Chuei-Tang Wang
  • Patent number: 10777590
    Abstract: A method for forming an image sensor device structure is provided. The method includes forming a light-sensing region in a substrate, and forming an interconnect structure below a first surface of the substrate. The method also includes forming a trench in the light-sensing region from a second surface of the substrate, and forming a doping layer in the trench. The method includes forming an oxide layer in the trench and on the doping layer to form a doping region, and the doping region is inserted into the light-sensing region.
    Type: Grant
    Filed: October 2, 2019
    Date of Patent: September 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Yen-Ting Chiang, Chun-Yuan Chen, Hsiao-Hui Tseng, Yu-Jen Wang, Shyh-Fann Ting, Wei-Chuang Wu, Jen-Cheng Liu, Dun-Nian Yaung
  • Patent number: 10777502
    Abstract: A semiconductor chip including a die substrate, a plurality of first bonding structures, a plurality of conductive elements, at least one integrated device, a plurality of conductive posts and a protection layer is provided. The first bonding structures are disposed on the die substrate. The conductive elements are disposed on the die substrate adjacent to the first bonding structures. The integrated device is disposed on the die substrate over the first bonding structures, wherein the integrated device includes a plurality of second bonding structures and a plurality of conductive pillars, and the second bonding structures are hybrid bonded to the first bonding structures. The conductive posts are disposed on the conductive elements and surrounding the integrated device. The protection layer is encapsulating the integrated device and the conductive posts.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: September 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chuei-Tang Wang, Chung-Hao Tsai, Chen-Hua Yu, Wei-Ting Chen
  • Patent number: 10763229
    Abstract: A semiconductor structure includes a transceiver, a molding surrounding the transceiver, a plurality of vias extending through the molding, and a RDL disposed over the transceiver and the plurality of vias. In some embodiments, the RDL includes an antenna disposed over and electrically connected to the transceiver, and a dielectric layer surrounding the antenna. In some embodiments, the antenna includes an elongated portion extending over the molding and a via portion electrically connected to the transceiver.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: September 1, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Vincent Chen, Hung-Yi Kuo, Chuei-Tang Wang, Hao-Yi Tsai, Chen-Hua Yu, Wei-Ting Chen, Ming Hung Tseng, Yen-Liang Lin
  • Patent number: 10739206
    Abstract: The surface temperature of a portable device is estimated. A sensor detects the internal temperature of the portable device. The internal temperature and an ambient temperature are used as input to a circuit model that describes thermal behaviors of the portable device. Dynamic thermal management may be performed based on the estimated surface temperature.
    Type: Grant
    Filed: December 30, 2017
    Date of Patent: August 11, 2020
    Assignee: MediaTek Inc.
    Inventors: Chi-Wen Pan, Pei-Yu Huang, Sheng-Liang Kuo, Jih-Ming Hsu, Tai-Yu Chen, Yun-Ching Li, Wei-Ting Wang
  • Publication number: 20200243664
    Abstract: A semiconductor device and a method for fabricating the semiconductor device are provided, in which the method includes the steps of forming a gate structure on a substrate, forming a spacer on a sidewall of the gate structure, forming two recesses adjacent to two sides of the spacer, performing a cleaning process to trim the spacer for forming a void between the spacer and the substrate, and forming two portions of an epitaxial layer in the two recesses. The semiconductor device preferably includes a cap layer on the two portions of the epitaxial layer as the cap layer includes a planar top surface and an inclined sidewall.
    Type: Application
    Filed: March 6, 2019
    Publication date: July 30, 2020
    Inventors: Wei-Chih Chuang, Chia-Jong Liu, Kuang-Hsiu Chen, Chung-Ting Huang, Chi-Hsuan Tang, Kai-Hsiang Wang, Bing-Yang Jiang, Yu-Lin Cheng, Chun-Jen Chen, Yu-Shu Lin, Jhong-Yi Huang, Chao-Nan Chen, Guan-Ying Wu
  • Patent number: 10727265
    Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. The photodiode comprises a doped layer with a first doping type and an adjoining region of the substrate with a second doping type that is different than the first doping type. A boundary deep trench isolation (BDTI) structure is disposed between adjacent pixel regions. A multiple deep trench isolation (MDTI) structure overlies the doped layer of the photodiode. The MDTI structure comprises a stack of dielectric layers lining sidewalls of a MDTI trench. A plurality of color filters is disposed at the back-side of the substrate corresponding to the respective photodiode of the plurality of pixel regions and overlying the MDTI structure.
    Type: Grant
    Filed: October 23, 2019
    Date of Patent: July 28, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei Chuang Wu, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Jen-Cheng Liu, Yen-Ting Chiang, Chun-Yuan Chen, Shen-Hui Hong
  • Publication number: 20200222752
    Abstract: A two-way transmission mechanism for fitness equipment includes a first transmission wheel mounted at a crankshaft and connected to a first relay wheel by a first transmission belt, a second transmission wheel connected to a second relay wheel by a second transmission belt, a transmission shaft connecting the first and second relay wheels, a one-way ratchet mounted between the first relay wheel and the transmission shaft for power transmission therebetween in one direction, and a motor having a motor shaft connected with the second transmission wheel.
    Type: Application
    Filed: May 10, 2019
    Publication date: July 16, 2020
    Inventors: Chao-Chuan CHEN, Chung-Hsien WANG, Wei-Ting LIAO, Chih-Tai LIU
  • Publication number: 20200218562
    Abstract: The present disclosure provides a communication method for virtual machines, an electronic device, and a non-transitory computer readable storage medium. The communication method for virtual machines suitable for a virtual machine architecture comprises the steps of: transmitting, through a shared link, an interrupt instruction to a second virtual machine by a first virtual machine; reading, in a shared configuration database, an instruction data corresponding to the interrupt instruction by the second virtual machine; and executing the instruction data and transmitting a result data through a virtual control plane to the first virtual machine by the second virtual machine, to exchange the data between the first virtual machine and the second virtual machine through the virtual control plane.
    Type: Application
    Filed: August 20, 2019
    Publication date: July 9, 2020
    Inventors: Wei-Chuan WANG, Po-Kai CHUANG, Yu-Ting TING, Chien-Kai TSENG, Tse HO LIN
  • Patent number: 10684651
    Abstract: An electronic device is disclosed, including a case, a supporting structure, a touch module, a protecting layer and a light emitting unit. The case has an opening. The supporting structure is connected to and disposed in the case. The touch module is connected to the supporting structure. The protecting layer is stacked on the touch module and exposed to the opening, and the protecting layer is separated from the case. The light emitting unit is disposed between the touch module and the protecting layer. Thereby, in the electronic device of the disclosure, a space below the protecting layer is effectively utilized, thereby reducing the size of the electronic device and being convenient for a user to carry, and also reducing the time and cost required for the assembly of the electronic device.
    Type: Grant
    Filed: April 25, 2019
    Date of Patent: June 16, 2020
    Assignee: ASUSTEK COMPUTER INC.
    Inventors: Yi-Ou Wang, Wei-Ting Wong, Hao-Ting Hung
  • Patent number: 10672864
    Abstract: A semiconductor memory device includes a semiconductor substrate, a first support layer, a first electrode, a capacitor dielectric layer, and a second electrode. The first support layer is disposed on the semiconductor substrate. The first electrode is disposed on the semiconductor substrate and penetrates the first support layer. The capacitor dielectric layer is disposed on the first electrode. The second electrode is disposed on the semiconductor substrate, and at least a part of the capacitor dielectric layer is disposed between the first electrode and the second electrode. The first support layer includes a carbon doped nitride layer, and a carbon concentration of a bottom portion of the first support layer is higher than a carbon concentration of a top portion of the first support layer.
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: June 2, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Tzu-Chin Wu, Wei-Hsin Liu, Yi-Wei Chen, Chia-Lung Chang, Jui-Min Lee, Po-Chun Chen, Li-Wei Feng, Ying-Chiao Wang, Wen-Chieh Lu, Chien-Ting Ho, Tsung-Ying Tsai, Kai-Ping Chen
  • Publication number: 20200154565
    Abstract: A composite with hollow nano-structures comprises multiple one dimensional hollow nanowires being dispersed into a polymer film; the polymer film is flexible; a dielectric constant of the one dimensional hollow nanowire is lower than a dielectric constant of the polymer film; and a dielectric constant of the composite is between the dielectric constant of the one dimensional hollow nanowire and the dielectric constant of the polymer film.
    Type: Application
    Filed: September 19, 2019
    Publication date: May 14, 2020
    Inventors: Tzong-Ming Wu, Fuh-Sheng Shieu, Wei-Ping Dow, Hong-Ta Yang, Jie-Mao Wang, Hsiang-Ting Wang
  • Patent number: 10653040
    Abstract: The present disclosure is directed to an apparatus for a server chassis. A position of the apparatus changes the airflow in the server chassis. The apparatus can be adjacent to a slot in the server chassis. The apparatus adjusts among a plurality of positions based on a height of the slot and/or a size of a computer component received at the slot. The apparatus includes a base portion and an arm. The base portion can couple with a wall of the chassis body, and the arm can include a plurality of moveable segments.
    Type: Grant
    Filed: May 21, 2019
    Date of Patent: May 12, 2020
    Assignee: QUANTA COMPUTER INC.
    Inventors: Wei-Te Wang, Shuo-Ting Jian, Samuel Chatelier, Yi-Chieh Chen