Patents by Inventor WEI V. TANG
WEI V. TANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11894233Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.Type: GrantFiled: September 29, 2022Date of Patent: February 6, 2024Assignee: Applied Materials, Inc.Inventors: Yixiong Yang, Wei V. Tang, Seshadri Ganguli, Sang Ho Yu, Feng Q. Liu, Jeffrey W. Anthis, David Thompson, Jacqueline S. Wrench, Naomi Yoshida
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Publication number: 20230335434Abstract: Process chamber lid assemblies and process chambers comprising same are described. The lid assembly has a housing with a gas dispersion channel in fluid communication with a lid plate. A contoured bottom surface of the lid plate defines a gap to a top surface of a gas distribution plate. A pumping channel is formed between an upper outer peripheral contour of the gas distribution plate and the lid plate.Type: ApplicationFiled: June 12, 2023Publication date: October 19, 2023Applicant: Applied Materials, Inc.Inventors: Anqing Cui, Dien-Yeh Wu, Wei V. Tang, Yixiong Yang, Bo Wang
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Patent number: 11732358Abstract: Process chamber lids, processing chambers and methods using the lids are described. The lid includes a pumping liner with a showerhead, blocker plate and gas funnel positioned therein. A liner heater is positioned on the pumping liner to control temperature in the pumping liner. Gas is flowed into the gas funnel using a dead-volume free one-way valve with a remote plasma source.Type: GrantFiled: August 17, 2022Date of Patent: August 22, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Muhannad Mustafa, Muhammad M. Rasheed, Mario D. Sanchez, Srinivas Gandikota, Wei V. Tang
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Patent number: 11715667Abstract: Process chamber lid assemblies and process chambers comprising same are described. The lid assembly has a housing with a gas dispersion channel in fluid communication with a lid plate. A contoured bottom surface of the lid plate defines a gap to a top surface of a gas distribution plate. A pumping channel is formed between an upper outer peripheral contour of the gas distribution plate and the lid plate.Type: GrantFiled: April 14, 2022Date of Patent: August 1, 2023Assignee: Applied Materials, Inc.Inventors: Anqing Cui, Dien-Yeh Wu, Wei V. Tang, Yixiong Yang, Bo Wang
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Patent number: 11623253Abstract: Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.Type: GrantFiled: January 24, 2022Date of Patent: April 11, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Tejas Ulavi, Arkaprava Dan, Sanjeev Baluja, Wei V. Tang
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Publication number: 20230025937Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.Type: ApplicationFiled: September 29, 2022Publication date: January 26, 2023Applicant: Applied Materials, Inc.Inventors: Yixiong Yang, Wei V. Tang, Seshadri Ganguli, Sang Ho Yu, Feng Q. Liu, Jeffrey W. Anthis, David Thompson, Jacqueline S. Wrench, Naomi Yoshida
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Publication number: 20230005945Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an ?-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).Type: ApplicationFiled: September 9, 2022Publication date: January 5, 2023Applicant: Applied Materials, Inc.Inventors: Jacqueline S. Wrench, Yixiong Yang, Yong Wu, Wei V. Tang, Srinivas Gandikota, Yongjing Lin, Karla M Bernal Ramos, Shih Chung Chen
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Publication number: 20220389585Abstract: Process chamber lids, processing chambers and methods using the lids are described. The lid includes a pumping liner with a showerhead, blocker plate and gas funnel positioned therein. A liner heater is positioned on the pumping liner to control temperature in the pumping liner. Gas is flowed into the gas funnel using a dead-volume free one-way valve with a remote plasma source.Type: ApplicationFiled: August 17, 2022Publication date: December 8, 2022Applicant: Applied Materials, Inc.Inventors: Muhannad Mustafa, Muhammad M. Rasheed, Mario D. Sanchez, Srinivas Gandikota, Wei V. Tang
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Patent number: 11488830Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.Type: GrantFiled: August 23, 2019Date of Patent: November 1, 2022Assignee: Applied Materials, Inc.Inventors: Yixiong Yang, Wei V. Tang, Seshadri Ganguli, Sang Ho Yu, Feng Q. Liu, Jeffrey W. Anthis, David Thompson, Jacqueline S. Wrench, Naomi Yoshida
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Patent number: 11476267Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an ?-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).Type: GrantFiled: May 18, 2020Date of Patent: October 18, 2022Assignee: Applied Materials, Inc.Inventors: Jacqueline S. Wrench, Yixiong Yang, Yong Wu, Wei V. Tang, Srinivas Gandikota, Yongjing Lin, Karla M Bernal Ramos, Shih Chung Chen
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Patent number: 11447866Abstract: Process chamber lids, processing chambers and methods using the lids are described. The lid includes a pumping liner with a showerhead, blocker plate and gas funnel positioned therein. A liner heater is positioned on the pumping liner to control temperature in the pumping liner. Gas is flowed into the gas funnel using a dead-volume free one-way valve with a remote plasma source.Type: GrantFiled: June 17, 2021Date of Patent: September 20, 2022Assignee: Applied Materials, Inc.Inventors: Muhannad Mustafa, Muhammad M. Rasheed, Mario D. Sanchez, Srinivas Gandikota, Wei V. Tang
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Publication number: 20220246471Abstract: Process chamber lid assemblies and process chambers comprising same are described. The lid assembly has a housing with a gas dispersion channel in fluid communication with a lid plate. A contoured bottom surface of the lid plate defines a gap to a top surface of a gas distribution plate. A pumping channel is formed between an upper outer peripheral contour of the gas distribution plate and the lid plate.Type: ApplicationFiled: April 14, 2022Publication date: August 4, 2022Applicant: Applied Materials, Inc.Inventors: Anqing Cui, Dien-Yeh Wu, Wei V. Tang, Yixiong Yang, Bo Wang
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Publication number: 20220152668Abstract: Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.Type: ApplicationFiled: January 24, 2022Publication date: May 19, 2022Applicant: Applied Materials, Inc.Inventors: Tejas Ulavi, Arkaprava Dan, Sanjeev Baluja, Wei V. Tang
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Patent number: 11335591Abstract: Process chamber lid assemblies and process chambers comprising same are described. The lid assembly has a housing with a gas dispersion channel in fluid communication with a lid plate. A contoured bottom surface of the lid plate defines a gap to a top surface of a gas distribution plate. A pumping channel is formed between an upper outer peripheral contour of the gas distribution plate and the lid plate.Type: GrantFiled: May 28, 2020Date of Patent: May 17, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Anqing Cui, Dien-Yeh Wu, Wei V. Tang, Yixiong Yang, Bo Wang
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Patent number: 11260432Abstract: Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.Type: GrantFiled: September 18, 2020Date of Patent: March 1, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Tejas Ulavi, Arkaprava Dan, Sanjeev Baluja, Wei V. Tang
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Publication number: 20210395892Abstract: Process chamber lids, processing chambers and methods using the lids are described. The lid includes a pumping liner with a showerhead, blocker plate and gas funnel positioned therein. A liner heater is positioned on the pumping liner to control temperature in the pumping liner. Gas is flowed into the gas funnel using a dead-volume free one-way valve with a remote plasma source.Type: ApplicationFiled: June 17, 2021Publication date: December 23, 2021Applicant: Applied Materials, Inc.Inventors: Muhannad Mustafa, Muhammad M. Rasheed, Mario D. Sanchez, Srinivas Gandikota, Wei V. Tang
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Patent number: 11171047Abstract: Methods of forming semiconductor device with fluorine-incorporated metal nitride films are described. A substrate surface is exposed to a metal fluoride precursor to form a metal-fluorine species on the substrate surface. The substrate surface is exposed to a nitriding agent to react with the metal-fluorine species to form a fluorine-incorporated metal nitride film.Type: GrantFiled: June 28, 2020Date of Patent: November 9, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Yixiong Yang, Srinivas Gandikota, Steven C. H. Hung, Jacqueline S. Wrench, Yongjing Lin, Susmit Singha Roy, Wei V. Tang, Shih Chung Chen
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Patent number: 10991586Abstract: In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.Type: GrantFiled: March 30, 2020Date of Patent: April 27, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Yong Wu, Wei V. Tang, Jianqiu Guo, Wenyi Liu, Yixiong Yang, Jacqueline S. Wrench, Mandyam Sriram, Srinivas Gandikota, Yumin He
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Publication number: 20210086239Abstract: Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.Type: ApplicationFiled: September 18, 2020Publication date: March 25, 2021Applicant: Applied Materials, Inc.Inventors: Tejas Ulavi, Arkaprava Dan, Sanjeev Baluja, Wei V. Tang
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Publication number: 20200411373Abstract: Methods of forming semiconductor device with fluorine-incorporated metal nitride films are described. A substrate surface is exposed to a metal fluoride precursor to form a metal-fluorine species on the substrate surface. The substrate surface is exposed to a nitriding agent to react with the metal-fluorine species to form a fluorine-incorporated metal nitride film.Type: ApplicationFiled: June 28, 2020Publication date: December 31, 2020Applicant: Applied Materials, Inc.Inventors: Yixiong Yang, Srinivas Gandikota, Steven C.H. Hung, Jacqueline S. Wrench, Yongjing Lin, Susmit Singha Roy, Wei V. Tang, Shih Chung Chen
