Patents by Inventor Wei W. Wang
Wei W. Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11211230Abstract: A gas flow system is provided, including a gas flow source, one or more gas inlets, one or more gas outlets, a gas flow region, a low pressure region, wherein the low pressure region is fluidly coupled to the one or more gas outlets, a high pressure region, and a gap. The one or more gas inlets are fluidly coupleable to the gas flow source. The gas flow region is fluidly coupled to the one or more gas inlets and the one or more gas outlets. The gap fluidly couples the gas flow region to the high pressure region. The high pressure region near the targets allows for process gas interactions with the target to sputter onto the substrate below. The low pressure region near the substrate prevents unwanted chemical interactions between the process gas and the substrate.Type: GrantFiled: April 2, 2020Date of Patent: December 28, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Keith A. Miller, Wei W. Wang, Alexander Erenstein, John J. Mazzocco
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Patent number: 11101117Abstract: Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.Type: GrantFiled: September 17, 2019Date of Patent: August 24, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Anantha K. Subramani, Hanbing Wu, Wei W. Wang, Ashish Goel, Srinivas Guggilla, Lavinia Nistor
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Patent number: 11011357Abstract: Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.Type: GrantFiled: February 7, 2018Date of Patent: May 18, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Hanbing Wu, Anantha K. Subramani, Ashish Goel, Xiaodong Wang, Wei W. Wang, Rongjun Wang, Chi Hong Ching
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Publication number: 20200335310Abstract: A gas flow system is provided, including a gas flow source, one or more gas inlets, one or more gas outlets, a gas flow region, a low pressure region, wherein the low pressure region is fluidly coupled to the one or more gas outlets, a high pressure region, and a gap. The one or more gas inlets are fluidly coupleable to the gas flow source. The gas flow region is fluidly coupled to the one or more gas inlets and the one or more gas outlets. The gap fluidly couples the gas flow region to the high pressure region. The high pressure region near the targets allows for process gas interactions with the target to sputter onto the substrate below. The low pressure region near the substrate prevents unwanted chemical interactions between the process gas and the substrate.Type: ApplicationFiled: April 2, 2020Publication date: October 22, 2020Inventors: Keith A. MILLER, Wei W. WANG, Alexander ERENSTEIN, John J. MAZZOCCO
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Publication number: 20200312683Abstract: A moveable substrate support for use in a processing chamber is provided. The moveable substrate support includes a substrate support surface and a robot, wherein the robot is configured to move the substrate support surface along a movement path. The substrate support includes a halo, and the halo protects the underlying components of the processing chamber from unwanted deposition, while the substrate support surface is moving along the movement path. The substrate support protects processing chamber components from deposition, reducing cleaning time and reducing the need for repairs of the components of the processing chamber.Type: ApplicationFiled: March 3, 2020Publication date: October 1, 2020Inventors: Ilya LAVITSKY, Keith A. MILLER, John J. MAZZOCCO, Wei W. WANG
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Publication number: 20200013597Abstract: Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.Type: ApplicationFiled: September 17, 2019Publication date: January 9, 2020Inventors: Anantha K. SUBRAMANI, Hanbing WU, Wei W. WANG, Ashish GOEL, Srinivas GUGGILLA, Lavinia NISTOR
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Patent number: 10468238Abstract: Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.Type: GrantFiled: August 18, 2016Date of Patent: November 5, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Anantha K. Subramani, Hanbing Wu, Wei W. Wang, Ashish Goel, Srinivas Guggilla, Lavinia Nistor
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Patent number: 10325763Abstract: Physical vapor deposition target assemblies and methods of cooling physical vapor deposition targets are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of rows and bends fluidly connected to an inlet end and an outlet end.Type: GrantFiled: January 20, 2017Date of Patent: June 18, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Wei W. Wang, Kartik Shah, Vishwas Kumar Pandey
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Patent number: 10249522Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. One or more lift pins has a light pipe disposed therein to collect radiation emitted or transmitted by the substrate when the lift pin contacts the substrate surface.Type: GrantFiled: June 5, 2017Date of Patent: April 2, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Hanbing Wu, Anantha K. Subramani, Wei W. Wang, Aaron Muir Hunter
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Publication number: 20180240655Abstract: Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.Type: ApplicationFiled: February 7, 2018Publication date: August 23, 2018Inventors: HANBING WU, ANANTHA K. SUBRAMANI, ASHISH GOEL, XIAODONG WANG, WEI W. WANG, RONGJUN WANG, CHI HONG CHING
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Publication number: 20180211826Abstract: Physical vapor deposition target assemblies and methods of cooling physical vapor deposition targets are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of rows and bends fluidly connected to an inlet end and an outlet end.Type: ApplicationFiled: January 20, 2017Publication date: July 26, 2018Inventors: Wei W. Wang, Kartik Shah, Vishwas Kumar Pandey
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Patent number: 9853579Abstract: An electrostatic chuck includes a dielectric disk having a support surface to support a substrate and an opposing second surface, wherein at least one chucking electrode is disposed within the dielectric disk; a radio frequency (RF) bias plate disposed below the dielectric disk; a plurality of lamps disposed below the RF bias plate to heat the dielectric disk; a metallic plate disposed below the lamps to absorb heat generated by the lamps; a shaft coupled to the second surface of the dielectric disk at a first end of the shaft to support the dielectric disk in a spaced apart relation to the RF bias plate and extending away from the dielectric disk and through the RF bias plate and the metallic plate; and a rotation assembly coupled to the shaft to rotate the shaft and the dielectric disk with respect to the RF bias plate, lamps, and metallic plate.Type: GrantFiled: December 4, 2014Date of Patent: December 26, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Anantha K. Subramani, Ashish Goel, Wei W. Wang, Bharath Swaminathan, Vijay D. Parkhe, Xiaoxiong Yuan
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Patent number: 9831074Abstract: The present invention provides an apparatus including a bipolar collimator disposed in a physical vapor deposition chamber and methods of using the same. In one embodiment, an apparatus includes a chamber body and a chamber lid disposed on the chamber body defining a processing region therein, a collimator disposed in the processing region, and a power source coupled to the collimator.Type: GrantFiled: October 24, 2013Date of Patent: November 28, 2017Assignee: Applied Materials, Inc.Inventors: Joung Joo Lee, Guojun Liu, Wei W. Wang, Prashanth Kothnur
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Publication number: 20170271182Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. One or more lift pins has a light pipe disposed therein to collect radiation emitted or transmitted by the substrate when the lift pin contacts the substrate surface.Type: ApplicationFiled: June 5, 2017Publication date: September 21, 2017Inventors: Hanbing WU, Anantha K. SUBRAMANI, Wei W. WANG, Aaron Muir HUNTER
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Patent number: 9673074Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. One or more lift pins has a light pipe disposed therein to collect radiation emitted or transmitted by the substrate when the lift pin contacts the substrate surface.Type: GrantFiled: February 25, 2014Date of Patent: June 6, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Hanbing Wu, Anantha K. Subramani, Wei W. Wang, Aaron Muir Hunter
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Publication number: 20170053784Abstract: Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.Type: ApplicationFiled: August 18, 2016Publication date: February 23, 2017Inventors: Anantha K. SUBRAMANI, Hanbing WU, Wei W. WANG, Ashish GOEL, Srinivas GUGGILLA, Lavinia NISTOR
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Patent number: 9340866Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.Type: GrantFiled: March 30, 2012Date of Patent: May 17, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Alan Ritchie, Donny Young, Wei W. Wang, Ananthkrishna Jupudi, Thanh X. Nguyen, Kirankumar Savandaiah
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Publication number: 20150170952Abstract: An electrostatic chuck includes a dielectric disk having a support surface to support a substrate and an opposing second surface, wherein at least one chucking electrode is disposed within the dielectric disk; a radio frequency (RF) bias plate disposed below the dielectric disk; a plurality of lamps disposed below the RF bias plate to heat the dielectric disk; a metallic plate disposed below the lamps to absorb heat generated by the lamps; a shaft coupled to the second surface of the dielectric disk at a first end of the shaft to support the dielectric disk in a spaced apart relation to the RF bias plate and extending away from the dielectric disk and through the RF bias plate and the metallic plate; and a rotation assembly coupled to the shaft to rotate the shaft and the dielectric disk with respect to the RF bias plate, lamps, and metallic plate.Type: ApplicationFiled: December 4, 2014Publication date: June 18, 2015Inventors: ANANTHA K. SUBRAMANI, Ashish Goel, Wei W. Wang, Bharath Swaminathan, Vijay D. Parkhe, Xiaoxiong Yuan
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Publication number: 20150144263Abstract: A substrate heating pedestal for a process chamber for processing substrates is described. The pedestal comprises an annular plate comprising a surface having an array of recesses. A plurality of ceramic balls are each positioned in a recess on the surface of the annular plate to define a substrate receiving surface. A heating element is embedded in the annular plate.Type: ApplicationFiled: February 3, 2015Publication date: May 28, 2015Applicant: APPLIED MATERIALS, INC.Inventors: Martin RIKER, Wei W. WANG
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Publication number: 20150114823Abstract: The present invention provides an apparatus including a bipolar collimator disposed in a physical vapor deposition chamber and methods of using the same. In one embodiment, an apparatus includes a chamber body and a chamber lid disposed on the chamber body defining a processing region therein, a collimator disposed in the processing region, and a power source coupled to the collimator.Type: ApplicationFiled: October 24, 2013Publication date: April 30, 2015Inventors: Joung Joo LEE, Guojun LIU, Wei W. WANG, Prashanth KOTHNUR