Abstract: A method for manufacturing a semiconductor device includes: forming a first waveguide structure and a second waveguide structure on a substrate in which the first waveguide structure and the second waveguide structure is spaced apart from each other by a recess; conformally forming an un-doped dielectric layer to cover the first and second waveguide structures and to form a gap between two corresponding portions of the un-doped dielectric layer laterally covering the first waveguide structure and the second waveguide structure, respectively; and forming a doped filling layer to fill the gap.

Abstract: An electronic device has a narrow viewing angle state and a wide viewing angle state, and includes a panel and a light source providing a light passing through the panel. In the narrow viewing angle state, the light has a first relative light intensity and a second relative light intensity. The first relative light intensity is the strongest light intensity, the second relative light intensity is 50% of the strongest light intensity, the first relative light intensity corresponds to an angle of 0°, the second relative light intensity corresponds to a half-value angle, and the half-value angle is between ?15° and 15°. In the narrow angle state, a third relative light intensity at each angle between 20° and 60° or each angle between ?20° and ?60° is lower than 20% of the strongest light intensity.

Abstract: A memory device, includes a memory array for storing a plurality of vector data each of which has an MSB vector and a LSB vector. The memory array includes a plurality of memory units each of which has a first bit and a second bit. The first bit is used to store the MSB vector of each vector data, the second bit is used to store the LSB vector of each vector data. A bit line corresponding to each vector data executes one time of bit-line-setup, and reads the MSB vector and the LSB vector of each vector data according to the bit line. The threshold voltage distribution of each memory unit is divided into N states, where N is a positive integer and N is less than 2 to the power of 2, and the effective bit number stored by each memory unit is less than 2.

Abstract: A micro LED display panel includes a blue LED layer, a green LED layer, and a red LED layer. The blue LED layer, the green LED layer, and the red LED layer are in a stacked formation. The blue, the green, and the red LED layers each include a plurality of micro LEDs spaced apart from each other. The composition of the layers is such that light emitted from all but the bottom layer is able to pass through transparent material in other layers before exiting the panel and being viewed.

Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

Abstract: A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device using blocks, e.g., discrete connection blocks, having through vias and/or integrated passive devices formed therein are provided. Embodiments such as those disclosed herein may be utilized in PoP applications. In an embodiment, the semiconductor device includes a die and a connection block encased in a molding compound. Interconnection layers may be formed on surfaces of the die, the connection block and the molding compound. One or more dies and/or packages may be attached to the interconnection layers.

Abstract: Disclosed herein are composite polypeptide. According to various embodiments, the composite polypeptide includes a parent polypeptide and a metal binding motif capable of forming a complex with a metal cation. The composite polypeptide may be conjugated with a linker unit having a plurality of functional elements to form a multi-functional molecular construct. Alternatively, multiple composite polypeptides may be conjugated to a linker unit to form a molecular construct, or a polypeptide bundle. Linker units suitable for conjugating with the composite polypeptide having the metal binding motif are also disclosed.

Abstract: A computer system is disclosed which has a master, such as a processor, a memory, and I/O device, a first transfer path, which includes a bus, and a second transfer path, which includes a transfer interconnection. Transfers between the memory and the I/O device are effected via the first path while transfers between the processor and the I/O device are transferred via the second path. The disparate treatment between these two types of transfers reduces the likelihood that the transfer via the second path is delayed and thereby reduces the likelihood that the master is totally blocked from operation.

Abstract: A method and system is disclosed for efficiently transferring a sequence of data words from an I/O device to sequential addresses in a main memory via an I/O bridge. The sequence of data words to be transferred includes one or more subsequences of data words. Each subsequence of data words include only data words destined to addresses of the main memory in which data words of only one data line are stored. The I/O bridge has control logic for receiving a first subsequence of data words corresponding to a currently owned data line and for claiming ownership in one or more of the very next data lines corresponding to the next subsequences of data words to be transferred from the I/O device. The I/O bridge also has a buffer memory for storing a subsequence of the sequence of data words received from the I/O device.

Abstract: A memory reflection scheme is disclosed including a snarfing agent provided with efficient memory reflection circuitry for snarfing data. The memory reflection circuitry is for snarfing particular data written back from a write back agent to a memory subsystem agent. In response to unsuccessfully snarfing the particular data written back from the write back agent to the memory subsystem agent, the memory reflection circuitry issues a command to read the particular data from the memory subsystem agent. However, the memory reflection circuitry only issues such a command if the write back agent successfully writes back the particular data to the memory subsystem agent.