Patents by Inventor Wei-Wen Tsai
Wei-Wen Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11968906Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a contact hole in the first IMD layer; forming a bottom electrode layer in the contact hole; forming a magnetic tunneling junction (MTJ) stack on the bottom electrode layer; and removing the MTJ stack and the bottom electrode layer to form a MTJ on a bottom electrode. Preferably, the bottom electrode protrudes above a top surface of the first IMD layer.Type: GrantFiled: May 25, 2020Date of Patent: April 23, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Jin-Yan Chiou, Wei-Chuan Tsai, Hsin-Fu Huang, Yen-Tsai Yi, Hsiang-Wen Ke
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Publication number: 20240120272Abstract: Embodiments of the present disclosure relates to a method for forming a semiconductor device structure. The method includes including forming one or more conductive features in a first interlayer dielectric (ILD), forming an etch stop layer on the first ILD, forming a second ILD over the etch stop layer, forming one or more openings through the second ILD and the etch stop layer to expose a top surface of the one or more first conductive features, wherein the one or more openings are formed by a first etch process in a first process chamber, exposing the one or more openings to a second etch process in a second process chamber so that the shape of the or more openings is elongated, and filling the one or more openings with a conductive material.Type: ApplicationFiled: January 15, 2023Publication date: April 11, 2024Inventors: Wei-Hao LIAO, Hsi-Wen TIEN, Chih Wei LU, Yung-Hsu WU, Cherng-Shiaw TSAI, Chia-Wei SU
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Patent number: 11942993Abstract: An optical transmission device includes: a control module generate a control signal output which includes a slope adjust signal and a bias voltage offset adjust signal according to an input signal indicating a dispersion amount an electrical level adjust signal; a multi-level pulse amplitude modulator; and an asymmetrical optical modulator which is controlled by the slope adjust signal to be operated at one of a positive slope and a negative slope of a transfer function of the asymmetrical optical modulator itself, and is controlled by the bias voltage offset adjust signal of the control signal output to offset a bias voltage point of the asymmetrical optical modulator itself from a quadrature point of the transfer function, and modulates the multi-level pulse amplitude modulation signal to an optical signal to generate an optical modulate signal having a chirp.Type: GrantFiled: December 18, 2020Date of Patent: March 26, 2024Assignee: Molex, LLCInventors: Kuen-Ting Tsai, Wei-Hung Chen, Zuon-Min Chuang, Yao-Wen Liang
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Patent number: 11937903Abstract: A blood pressure device includes a first blood pressure measuring device, a second blood pressure measuring device, and a controller. The first blood pressure measuring device is to be worn on a first position of a wrist so as to obtain a first blood pressure information of the first position. The second blood pressure measuring device is to be worn on a second position of the wrist so as to obtain a second blood pressure information of the second position. The controller is electrically coupled to the first blood pressure measuring device and the second blood pressure measuring device so as to adjust tightness between the expanders and the user's skin, respectively. The controller receives, processes, and calculates a pulse transit time between the first blood pressure information and the second blood pressure information, and the controller obtains at least one blood pressure value based on the pulse transit time.Type: GrantFiled: December 29, 2020Date of Patent: March 26, 2024Assignee: MICROJET TECHNOLOGY CO., LTD.Inventors: Hao-Jan Mou, Yung-Lung Han, Chi-Feng Huang, Chang-Yen Tsai, Wei-Ming Lee, Chun-Yi Kuo, Chin-Wen Hsieh
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Patent number: 11935957Abstract: Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.Type: GrantFiled: August 9, 2021Date of Patent: March 19, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Chiang Wu, Wei-Chin Lee, Shih-Hang Chiu, Chia-Ching Lee, Hsueh Wen Tsau, Cheng-Yen Tsai, Cheng-Lung Hung, Da-Yuan Lee, Ching-Hwanq Su
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Patent number: 11918329Abstract: A physiological detection device includes system including a first array PPG detector, a second array PPG detector, a display and a processing unit. The first array PPG detector is configured to generate a plurality of first PPG signals. The second array PPG detector is configured to generate a plurality of second PPG signals. The display is configured to show a detected result of the physiological detection system. The processing unit is configured to convert the plurality of first PPG signals and the plurality of second PPG signals to a first 3D energy distribution and a second 3D energy distribution, respectively, and control the display to show an alert message.Type: GrantFiled: April 23, 2021Date of Patent: March 5, 2024Assignee: PIXART IMAGING INC.Inventors: Chiung-Wen Lin, Wei-Ru Han, Yang-Ming Chou, Cheng-Nan Tsai, Ren-Hau Gu, Chih-Yuan Chuang
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Patent number: 11667061Abstract: The invention provides a method of forming porous polyurethane polishing pad that includes feeding liquid polyurethane onto a web sheet with a doctor blade while back tensioning the web. Coagulating liquid polyurethane onto the web sheet forms a two-layer substrate. The two-layer substrate has a porous matrix wherein the porous matrix has large pores extending upward from a base surface and open to an upper surface. Spring-arm sections connect lower and upper sections of the large pores.Type: GrantFiled: April 18, 2020Date of Patent: June 6, 2023Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Wei-Wen Tsai, Katsumasa Kawabata, Hui Bin Huang, Akane Uehara, Yosuke Takei
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Patent number: 11339308Abstract: A process for chemical mechanical polishing a substrate containing tungsten and titanium is provided comprising: providing the substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a chitosan; a dicarboxylic acid, wherein the dicarboxylic acid is selected from the group consisting of propanedioic acid and 2-hydroxypropanedioic acid; a source of iron ions; a colloidal silica abrasive with a positive surface charge; and, optionally pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) and some of the titanium (Ti) is polished away from the substrate with a removal selectivity for the tungsten (W) relative to the titanium (Ti).Type: GrantFiled: March 1, 2016Date of Patent: May 24, 2022Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Wei-Wen Tsai, Lin-Chen Ho, Cheng-Ping Lee, Jiun-Fang Wang
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Publication number: 20210323115Abstract: The invention provides a porous polyurethane polishing pad that includes a porous matrix. The matrix has large pores that extend upward from a base surface and open to an upper surface. The large pores are interconnected with tertiary pores, a portion of the large pores is open to a top polishing surface and at least a portion of the large pores extend to the top polishing surface. Spring-arm sections connect lower and upper sections of the large pores. The spring-arm sections all are in a same horizontal direction as measured from the vertical orientation and they combine for increasing compressibility of the polishing pad and contact area of the top polishing surface during polishing.Type: ApplicationFiled: April 18, 2020Publication date: October 21, 2021Inventors: Wei-Wen TSAI, Katsumasa KAWABATA, Hui Bin HUANG, Akane UEHARA, Yosuke TAKEI
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Publication number: 20210323202Abstract: The invention provides a method of forming porous polyurethane polishing pad that includes feeding liquid polyurethane onto a web sheet with a doctor blade while back tensioning the web. Coagulating liquid polyurethane onto the web sheet forms a two-layer substrate. The two-layer substrate has a porous matrix wherein the porous matrix has large pores extending upward from a base surface and open to an upper surface. Spring-arm sections connect lower and upper sections of the large pores.Type: ApplicationFiled: April 18, 2020Publication date: October 21, 2021Inventors: Wei-Wen TSAI, Katsumasa KAWABATA, Hui Bin HUANG, Akane UEHARA, Yosuke TAKEI
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Publication number: 20210323116Abstract: The invention provides a porous polyurethane polishing pad that includes a porous matrix having large pores that extend upward from a base surface and open to an upper surface. The large pores extend to the top polishing surface and have lower and upper sections with a vertical orientation. The lower and upper sections are offset in a horizontal direction. Middle-sized pores with a columnar shape and a vertical orientation originate adjacent the middle sections and small pores with a columnar shape and a vertical orientation originate between the middle-sized pores. The pores combine for increasing compressibility of the polishing pad and contact area of the top polishing surface during polishing.Type: ApplicationFiled: April 18, 2020Publication date: October 21, 2021Inventors: Wei-Wen TSAI, Katsumasa KAWABATA, Hui Bin HUANG, Akane UEHARA, Yosuke TAKEI
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Patent number: 10947415Abstract: A process and composition are disclosed for polishing tungsten containing select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate of tungsten. The process and composition include providing a substrate containing tungsten; providing a stable polishing composition, containing, as initial components: water; an oxidizing agent; select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate, and corrosion rate of tungsten is reduced.Type: GrantFiled: February 21, 2020Date of Patent: March 16, 2021Assignee: Rohm and Haas Electronic Materials CMP HoldingsInventors: Lin-Chen Ho, Wei-Wen Tsai, Cheng-Ping Lee
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Publication number: 20210002512Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; nonionic polyacrylamide; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive having a negative zeta potential; and, optionally, a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten is inhibited as well as erosion of dielectrics underlying the tungsten.Type: ApplicationFiled: September 17, 2020Publication date: January 7, 2021Inventors: Lin-Chen Ho, Wei-Wen Tsai
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Patent number: 10815392Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; nonionic polyacrylamide; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive having a negative zeta potential; and, optionally, a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten is inhibited as well as erosion of dielectrics underlying the tungsten.Type: GrantFiled: March 3, 2019Date of Patent: October 27, 2020Assignee: ROHM AND HAAS ELECTRONIC CMP HOLDINGS, INC.Inventors: Lin-Chen Ho, Wei-Wen Tsai
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Publication number: 20200255690Abstract: A process and composition are disclosed for polishing tungsten containing select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate of tungsten. The process and composition include providing a substrate containing tungsten; providing a stable polishing composition, containing, as initial components: water; an oxidizing agent; select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate, and corrosion rate of tungsten is reduced.Type: ApplicationFiled: February 21, 2020Publication date: August 13, 2020Inventors: Lin-Chen Ho, Wei-Wen Tsai, Cheng-Ping Lee
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Patent number: 10640682Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; guar gum; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).Type: GrantFiled: September 29, 2016Date of Patent: May 5, 2020Assignee: Rohm and Haas Electronics Materials CMP Holdings, Inc.Inventors: Wei-Wen Tsai, Lin-Chen Ho, Cheng-Ping Lee
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Patent number: 10633557Abstract: A process for chemical mechanical polishing a substrate containing tungsten to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics is disclosed. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; xanthan gum; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; optionally a surfactant; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).Type: GrantFiled: September 29, 2016Date of Patent: April 28, 2020Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Lin-Chen Ho, Wei-Wen Tsai, Cheng-Ping Lee
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Patent number: 10633558Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; alginate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).Type: GrantFiled: September 29, 2016Date of Patent: April 28, 2020Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Wei-Wen Tsai, Lin-Chen Ho, Cheng-Ping Lee
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Patent number: 10604678Abstract: A process and composition are disclosed for polishing tungsten containing select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate of tungsten. The process and composition include providing a substrate containing tungsten; providing a stable polishing composition, containing, as initial components: water; an oxidizing agent; select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate, and corrosion rate of tungsten is reduced.Type: GrantFiled: February 8, 2019Date of Patent: March 31, 2020Assignee: Rohrn and Haas Electronic Materials CMP Holdings, Inc.Inventors: Lin-Chen Ho, Wei-Wen Tsai, Cheng-Ping Lee
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Patent number: 10573524Abstract: A process for chemical mechanical polishing a substrate containing titanium nitride and titanium is provided comprising: providing a polishing composition, containing, as initial components: water; an oxidizing agent; a linear polyalkylenimine polymer; a colloidal silica abrasive with a positive surface charge; a carboxylic acid; a source of ferric ions; and, optionally pH adjusting agent; wherein the polishing composition has a pH of 1 to 4; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein at least some of the titanium nitride and at least some of the titanium is polished away with a selectivity between titanium nitride and titanium.Type: GrantFiled: March 4, 2016Date of Patent: February 25, 2020Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Wei-Wen Tsai, Cheng-Ping Lee, Jiun-Fang Wang