Abstract: The present invention provides a method of manufacturing a semiconductor device. The method at least comprises the following steps. First, the semiconductor device, which comprises a gate, a gate dielectric layer, an active layer, a source and a drain, is manufactured. However, the semiconductor device has a plurality of defects, and the active layer is a metal oxide thin film. After annealing the semiconductor device, it will be transferred into a chamber. A final step of injecting a supercritical fluid carried with a co-solvent into the chamber is then performed to modify the abovementioned defects.

Abstract: The present invention provides a method of manufacturing a semiconductor device. The method at least comprises the following steps. First, the semiconductor device, which comprises a gate, a gate dielectric layer, an active layer, a source and a drain, is manufactured. However, the semiconductor device has a plurality of defects, and the active layer is a metal oxide thin film. After annealing the semiconductor device, it will be transferred into a chamber. A final step of injecting a supercritical fluid carried with a co-solvent into the chamber is then performed to modify the abovementioned defects.

Abstract: A manufacturing method of a color filter including following steps is provided. First, a partition is formed on a substrate to form a plurality of pixel regions on the substrate. Next, a color pigment is provided along a continuous pigment-providing route, so as to form the color pigment on a sequence of pixel regions among the plurality of pixel regions and the partition. The method mentioned above can prevent the unfilled phenomenon of the pigment around the corners of the pixel region. Besides, a liquid crystal display panel having the color filter is also provided.

Abstract: A manufacturing method of a color filter including following steps is provided. First, a partition is formed on a substrate to form a plurality of pixel regions on the substrate. Next, a color pigment is provided along a continuous pigment-providing route, so as to form the color pigment on a sequence of pixel regions among the plurality of pixel regions and the partition. The method mentioned above can prevent the unfilled phenomenon of the pigment around the corners of the pixel region. Besides, a liquid crystal display panel having the color filter is also provided.

Abstract: A manufacturing method of a color filter including following steps is provided. First, a partition is formed on a substrate to form a plurality of pixel regions on the substrate. Next, a color pigment is provided along a continuous pigment-providing route, so as to form the color pigment on a sequence of pixel regions among the plurality of pixel regions and the partition. The method mentioned above can prevent the unfilled phenomenon of the pigment around the corners of the pixel region. Besides, a liquid crystal display panel having the color filter is also provided.

Abstract: A method for jetting color ink includes determining an initial voltage value of a nozzle, wherein the initial voltage value corresponds to a predetermined jetting volume of the nozzle; determining a maximum adjusting voltage value of the nozzle, wherein the maximum adjusting voltage value may correspond to an allowable error value of the predetermined jetting volume; combining the initial voltage value with an adjusting voltage value to obtain a jetting voltage, wherein the adjusting voltage value may be randomly selected between zero to the maximum adjusting voltage value; and jetting the color ink from the nozzle according to the jetting voltage onto a sub-pixel in a pixel.

Abstract: A method for jetting color ink includes determining an initial voltage value of a nozzle, wherein the initial voltage value corresponds to a predetermined jetting volume of the nozzle; determining a maximum adjusting voltage value of the nozzle, wherein the maximum adjusting voltage value may correspond to an allowable error value of the predetermined jetting volume; combining the initial voltage value with an adjusting voltage value to obtain a jetting voltage, wherein the adjusting voltage value may be randomly selected between zero to the maximum adjusting voltage value; and jetting the color ink from the nozzle according to the jetting voltage onto a sub-pixel in a pixel.

Abstract: A manufacturing method of a filter is provided. The manufacturing method includes steps as follows. First, a substrate is provided and a black matrix is formed on the substrate. The black matrix has a number of openings arranged in array. Next, a filter material is individually formed in the openings by inkjet printing or other methods, and the filter material includes a solvent and a dye mixed with the solvent. Thereafter, a thermal treatment is performed and an evaporation rate of the solvent during the thermal treatment is reduced, so as to cure the filter material. As the evaporation rate of the solvent is relatively slow, the filter material is still flowable during the thermal treatment. Hence, the cured filter material has a flat surface. The filter fabricated by the above manufacturing method has an even hue and a well flattened surface.

Abstract: A manufacturing method of a color filter including following steps is provided. First, a partition is formed on a substrate to form a plurality of pixel regions on the substrate. Next, a color pigment is provided along a continuous pigment-providing route, so as to form the color pigment on a sequence of pixel regions among the plurality of pixel regions and the partition. The method mentioned above can prevent the unfilled phenomenon of the pigment around the corners of the pixel region. Besides, a liquid crystal display panel having the color filter is also provided.

Abstract: A color filter including a substrate, a bank and a plurality of color filter films is provided. The bank is disposed on the substrate and has many openings. The bank has both a bottom surface contacting the substrate and a top surface exceeding the bottom surface. An outline of the bottom surface does not exceed that of the top surface. Besides, the color filter films are disposed on the substrate exposed by the openings, respectively, and each of the color filter films has a curved top surface. In the above-mentioned color filter, wetability between the bank and the color filter films is favorable.

Abstract: A method of manufacturing a color filter is provided. First, a substrate is provided and then a partition, for example a black matrix, is formed on the substrate. The black matrix defines a plurality of first color filter areas and a plurality of second color filter areas corresponding to the first color filter areas on the substrate. Thereafter, a first color filter film and a second color filter film are formed in each of the first color filter areas and each of the second color filter areas corresponding thereto, respectively, such that a color filter is provided. The thickness of the first color filter film differs from the thickness of the second color filter film. Thus, images displayed by a transflective liquid crystal display with the aforementioned color filter have even colors.

Abstract: An MEMS mirror structure is formed using an etching process that forms sidewall oxide spacers while maintaining the integrity of the oxide layer formed over the reflective layer of the MEMS mirror structure. The discrete mirror structure is formed to include a reflective layer sandwiched between oxide layers and with a protect layer formed over the upper oxide layer. A spacer oxide layer is formed to cover the structure and oxide spacers are formed on sidewalls of the discrete structure using a selective etch process that is terminated when horizontal portions of the spacer oxide layer have cleared to expose the release layer formed below the discrete mirror structure and the protect layer. The superjacent protect layer prevents the spacer oxide etch process from attacking the upper oxide layer and therefore maintains the integrity of the upper oxide layer and the functionality of the mirror structure.

Abstract: A method for use in manufacturing a microelectromechanical system, such as a reflective stealth mirror includes the steps of: forming an I-shape mirror structure; forming a spacer layer over the I-shape mirror structure; and patterning the spacer layer to form at least one spacer along a side of the I-shape mirror structure.

Abstract: A mirror process uses a tungsten passivation layer to prevent metal-spiking induced mirror bridging and improve mirror curvature. A mirror structure is patterned on a first sacrificial layer overlying a substrate. A tungsten passivation layer is then blanket deposited to cover the top and sidewalls of the mirror structure. A second sacrificial layer is formed overlying the tungsten passivation layer. A releasing process with an etchant including XeF2 is performed to remove the second sacrificial layer, the tungsten passivation layer and the first sacrificial layer simultaneously.

Abstract: A method for use in manufacturing a microelectromechanical system, such as a reflective stealth mirror includes the steps of: forming an I-shape mirror structure; forming a spacer layer over the I-shape mirror structure; and patterning the spacer layer to form at least one spacer along a side of the I-shape mirror structure.

Abstract: An MEMS mirror structure is formed using an etching process that forms sidewall oxide spacers while maintaining the integrity of the oxide layer formed over the reflective layer of the MEMS mirror structure. The discrete mirror structure is formed to include a reflective layer sandwiched between oxide layers and with a protect layer formed over the upper oxide layer. A spacer oxide layer is formed to cover the structure and oxide spacers are formed on sidewalls of the discrete structure using a selective etch process that is terminated when horizontal portions of the spacer oxide layer have cleared to expose the release layer formed below the discrete mirror structure and the protect layer. The superjacent protect layer prevents the spacer oxide etch process from attacking the upper oxide layer and therefore maintains the integrity of the upper oxide layer and the functionality of the mirror structure.