Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to the source/drain feature, a gate portion between vertically adjacent channel layers, and an inner spacer between the source/drain feature and the gate portion and between adjacent channel layers. The semiconductor device further includes an air gap between the inner spacer and the source/drain feature.

Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.

Abstract: Embodiments of the present disclosure provide a method for forming semiconductor device structures. The method includes forming a fin structure having a stack of semiconductor layers comprising first semiconductor layers and second semiconductor layers alternatingly arranged, forming a sacrificial gate structure over a portion of the fin structure, removing the first and second semiconductor layers in a source/drain region of the fin structure that is not covered by the sacrificial gate structure, forming an epitaxial source/drain feature in the source/drain region, removing portions of the sacrificial gate structure to expose the first and second semiconductor layers, removing portions of the second semiconductor layers so that at least one second semiconductor layer has a width less than a width of each of the first semiconductor layers, forming a conformal gate dielectric layer on exposed first and second semiconductor layers, and forming a gate electrode layer on the conformal gate dielectric layer.

Abstract: A cantilever probe card device and a focusing probe thereof are provided. The focusing probe includes a soldering segment, a testing segment, two outer elastic arms spaced apart from each other, and a focusing portion. The testing segment is spaced apart from the soldering segment along an arrangement direction, and has a needle tip, an outer edge, and an inner edge that is opposite to the outer edge. Each of the two outer elastic arms has two end portions respectively connected to the soldering segment and the inner edge of the testing segment. The focusing portion is connected to the inner edge and is located between the needle tip and the two outer elastic arms, and has a plurality of focusing points arranged on one side thereof away from the two outer elastic arms.

Abstract: A dust collector includes a housing, a passage structure and a dust collecting region. The passage structure is disposed in the housing, and configured to accelerate an airflow containing dust particles and separate the dust particles from the airflow. The dust collecting region is connected to the passage structure, and is configured to collect at least part of the dust particles of the airflow.

Abstract: A dust collector includes a housing, a passage structure and a dust collecting region. The passage structure is disposed in the housing, and configured to accelerate an airflow containing dust particles and separate the dust particles from the airflow. The dust collecting region is connected to the passage structure, and is configured to collect at least part of the dust particles of the airflow.

Abstract: An apparatus for forming the thin film on the organic light-emitting diode component includes an evaporation resource mechanism, a mixing chamber mechanism, a hollow revolving spindle mechanism, and a vacuum mechanism. The mixing chamber mechanism is coupled to the evaporation resource mechanism. The vacuum mechanism is coupled to the mixing chamber mechanism and is used for generating vacuum in the mixing chamber mechanism. The hollow revolving spindle mechanism has a hollow revolving spindle whose of one end is coupled to the mixing chamber mechanism, a revolving arm coupled to the other end of the hollow revolving spindle and having a surface and a plurality of spraying holes disposed on the surface, and a transmission mean having a driving resource and a transmitting body disposed around the hollow revolving spindle, such that the driving source drives the transmitting body and further the transmitting body drives the hollow revolving spindle.

Abstract: A method of forming a film for organic electrified light emitting elements includes aligning a substrate with a shadow mask outside a vacuum deposition chamber; moving the aligned substrate and the shadow mask into the vacuum deposition chamber through a robotic arm and holding the aligned substrate and the shadow mask through an alignment mechanism; and plating an organic material from a vaporization material by vaporization to form a film of the organic electrified light emitting elements on the substrate.