Patents by Inventor Wei-Yang LO

Wei-Yang LO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having epitaxy structure
    Patent number: 9559207
    Abstract: A semiconductor device includes a substrate, a semiconductor fin, a gate stack, and an epitaxy structure. The semiconductor fin is disposed in the substrate. A portion of the semiconductor fin is protruded from the substrate. The gate stack is disposed over the portion of the semiconductor fin protruded from the substrate. The epitaxy structure is disposed on the substrate and adjacent to the gate stack. The epitaxy structure has a top surface facing away the substrate, and the top surface has at least one curved portion having a radius of curvature ranging from about 5 nm to about 20 nm.
    Type: Grant
    Filed: June 17, 2015
    Date of Patent: January 31, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Yang Lo, Shih-Hao Chen, Mu-Tsang Lin, Tung-Wen Cheng
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20160284851
    Abstract: A semiconductor device includes a substrate, a semiconductor fin, a gate stack, and an epitaxy structure. The semiconductor fin is disposed in the substrate. A portion of the semiconductor fin is protruded from the substrate. The gate stack is disposed over the portion of the semiconductor fin protruded from the substrate. The epitaxy structure is disposed on the substrate and adjacent to the gate stack. The epitaxy structure has a top surface facing away the substrate, and the top surface has at least one curved portion having a radius of curvature ranging from about 5 nm to about 20 nm.
    Type: Application
    Filed: June 17, 2015
    Publication date: September 29, 2016
    Inventors: Wei-Yang LO, Shih-Hao CHEN, Mu-Tsang LIN, Tung-Wen CHENG