Abstract: A method of manufacturing a semiconductor device includes forming a fin structure over a substrate, forming a sacrificial gate structure over the fin structure, and etching a source/drain (S/D) region of the fin structure to form an S/D recess. The fin structure includes first semiconductor layers and second semiconductor layers alternately stacked. The method further includes depositing an insulating dielectric layer in the S/D recess, depositing an etch protection layer over a bottom portion of the insulating dielectric layer, and partially removing the insulating dielectric layer. The method further includes growing an epitaxial S/D feature in the S/D recess. The bottom portion of the insulating dielectric layer interposes the epitaxial S/D feature and the substrate.

Abstract: A method of forming a semiconductor device includes forming a sacrificial layer over a first stack of nanostructures and an isolation region. A dummy gate structure is formed over the first stack of nanostructures, and a first portion of the sacrificial layer. A second portion of the sacrificial layer is removed to expose a sidewall of the first stack of nanostructures adjacent the dummy gate structure. A spacer layer is formed over the dummy gate structure. A first portion of the spacer layer physically contacts the first stack of nanostructures.

Abstract: A semiconductor device and methods of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure with a fin top surface disposed on the substrate, a source/drain (S/D) region disposed on the fin structure, a gate structure disposed on the fin top surface, and a gate spacer with first and second spacer portions disposed between the gate structure and the S/D region. The first spacer portion extends above the fin top surface and is disposed along a sidewall of the gate structure. The second spacer portion extends below the fin top surface and is disposed along a sidewall of the S/D region.

Abstract: One aspect of the present disclosure pertains to a method of forming a semiconductor structure. The method includes forming an active region over a substrate, forming a dummy gate layer over the active region, forming a hard mask layer over the dummy gate layer, forming a patterned photoresist over the hard mask layer, and performing an etching process to the hard mask layer and the dummy gate layer using the patterned photoresist, thereby forming patterned hard mask structures and patterned dummy gate structures. The patterned hard mask structures are formed with an uneven profile having a protruding portion. The protruding portion of each of the patterned hard mask structures has a first width, wherein each of the patterned dummy gate structures has a second width, and the first width is greater than the second width.

Abstract: Disclosed is a system and method for providing closed-loop control of the heating of a workpiece by an induction heating machine, including generating an acoustic wave in the workpiece with a pulsed laser; optically measuring displacements of the surface of the workpiece in response to the acoustic wave; calculating a sub-surface material property by analyzing the measured surface displacements; creating an error signal by comparing an attribute of the calculated sub-surface material properties with a desired attribute; and reducing the error signal below an acceptable limit by adjusting, in real-time, as often as necessary, the operation of the inductive heating machine.

Abstract: Rebound shock as well as hand and wrist fatigue associated with the use of a large wrench, is alleviated by a covering at least the butt end of the wrench with a sleeve, or gripping device, constructed from an pliant and deformable material, such as soft rubber. The gripping device may be provided for attachment to the elongated handle of a tool. It includes a sleeve dimensioned to encircle the tool handle along three sides and to extend along a substantial length of the handle. The gripping device may be mounted on the tool by means of an internal rib or ribs which lock the tool within the device channel cavity. In another embodiment, the device may include a series of finger size undulation along the outer surface to improve the ability of a person to maintain a grip.

Abstract: A method is described for determining and evaluating physical characteristics of a material. In particular, the present invention provides for determining and evaluating the anisotropic characteristics of materials, especially those resulting from such manufacturing processes as rolling, forming, extruding, drawing, forging, etc. In operation, a complex ultrasonic wave is created in the material of interest by any method. The wave form may be any combination of wave types and modes and is not limited to fundamental plate modes. The velocity of propagation of selected components which make up the complex ultrasonic wave are measured and evaluated to determine the physical characteristics of the material including, texture, strain/stress, grain size, crystal structure, etc.