Abstract: Deferred neural lighting in augmented image generation includes performing operations. The operations include generating a source light representation of a real-world scene from a panoramic image of the real-world scene, augmenting the real-world scene in an object representation of the real-world scene to generate an augmented scene, and processing the augmented scene to generate augmented image buffers. The operations further include selecting a target lighting representation identifying a target light source, processing, by a neural deferred rendering model, the augmented image buffers, the source lighting representation, and a target lighting representation to generate an augmented image having a lighting appearance according to the target light source and outputting the augmented image.

Abstract: Systems and methods for generating simulation data based on real-world dynamic objects are provided. A method includes obtaining two- and three-dimensional data descriptive of a dynamic object in the real world. The two- and three-dimensional information can be provided as an input to a machine-learned model to receive object model parameters descriptive of a pose and shape modification with respect to a three-dimensional template object model. The parameters can represent a three-dimensional dynamic object model indicative of an object pose and an object shape for the dynamic object. The method can be repeated on sequential two- and three-dimensional information to generate a sequence of object model parameters over time. Portions of a sequence of parameters can be stored as simulation data descriptive of a simulated trajectory of a unique dynamic object. The parameters can be evaluated by an objective function to refine the parameters and train the machine-learned model.

Abstract: An antioxidant conductive copper paste and a method for preparing the same are revealed. The antioxidant conductive copper paste includes conductive particles, a pasting agent, and a solvent. The conductive particles are copper nanoparticles or copper alloy nanoparticles. The pasting agent can be ethyl cellulose, Poly(3,4-ethylenedioxythiophene) (PEDOT), or epoxy. The solvent can be terpineol, ethylene glycol or diethylene glycol. The antioxidant conductive copper paste with features of high stability and low cost can be applied to produce electrodes of heterojunction solar cells.

Abstract: The present invention discloses in detail a semiconductor device and a patterning method for the plated electrode thereof. By using the laser ablation method according to the prior art, the semiconductor substrate below the ARC is damaged by direct destructive burning. According to the present invention, an additional protection layer is inserted between the ARC and the semiconductor substrate. Then a laser is used for heating and liquefying the protection layer below the ARC, and thus separating the ARC from the liquefied protection layer underneath and forming pattered openings. Afterwards, by a plating process, nickel and copper can plated.

Abstract: The present relates to antioxidant conductive copper ink and the method for preparing the same. The antioxidant conductive copper ink comprises nanometer copper or copper-alloy particles, which are used as the conductive particle material, water-free alcohol, which is used as the solvent, tert-butanol and ultra-pure water, which is used as the pasting agent, and carboxylic acid, which is used as the dispersant. Alternatively, isopropanol is used as the pasting agent and glycol is used as the solvent for injecting processes. The antioxidant conductive copper ink disclosed in the present invention owns the properties of high stability and low cost, and hence is applicable to the applications of fabricating the electrodes of silicon-crystal solar cells and printable electronic materials such as PCB or RFID.

Abstract: The present invention discloses in detail a semiconductor device and a patterning method for the plated electrode thereof. By using the laser ablation method according to the prior art, the semiconductor substrate below the ARC is damaged by direct destructive burning. According to the present invention, an additional protection layer is inserted between the ARC and the semiconductor substrate. Then a laser is used for heating and liquefying the protection layer below the ARC, and thus separating the ARC from the liquefied protection layer underneath and forming pattered openings. Afterwards, by a plating process, nickel and copper can plated.

Abstract: The present Invention relates to a multi-function floating solar power generating system, which uses buoys to form buoy sets. A convergence box is used as the center for forming a cross structure, on which solar cell modules installed at an inclination angle of 10 to 15 degrees are carried. According to the present invention, a water-pumping unit below the buoy set is used for pumping the fluid. Then a spray unit is used for spraying the fluid and driving the system to rotate counterclockwise or clockwise, hence achieving the effect of tracking the sun. Alternatively, the fluid can be filtered or used for cleaning the solar cell module.

Abstract: A method for fabricating a silicon-doped or boron-doped aluminum electrode is revealed. Aluminum target or aluminum paste prepared by selectively doped with silicon and/or boron is arranged at a silicon wafer with a passivation layer by physical deposition or screen printing. Then the doped aluminum layer is melted in linear or dot pattern to pass through the passivation layer and contact with the silicon wafer. Thus contact resistance between an aluminum back electrode and the silicon wafer of crystalline silicon solar cells is reduced and acceptor concentration on a surface layer of the silicon wafer is increased. Therefore the process speed is faster and the energy conversion efficiency of the solar cell is improved.

Abstract: A method for fabricating a silicon-doped or boron-doped aluminum electrode is revealed. Aluminum target or aluminum paste prepared by selectively doped with silicon and/or boron is arranged at a silicon wafer with a passivation layer by physical deposition or screen printing. Then the doped aluminum layer is melted in linear or dot pattern to pass through the passivation layer and contact with the silicon wafer. Thus contact resistance between an aluminum back electrode and the silicon wafer of crystalline silicon solar cells is reduced and acceptor concentration on a surface layer of the silicon wafer is increased. Therefore the process speed is faster and the energy conversion efficiency of the solar cell is improved.

Abstract: A photovoltaic system able to float on water and track sun includes a floating mechanism; an adjusting mechanism, combining with the floating mechanism; and a solar power mechanism, combining with the adjusting mechanism and located above the floating mechanism. This photovoltaic system can be located on the water surface, and has its floating mechanism to be under water by using the adjusting mechanism and the surrounding water source. The adjusting mechanism can be further used to adjust the solar power mechanism to a specific tilt angle according to the water level of the surrounding water and the sun-tracking angles that varies as the locations of the sun. Therefore, a novel photovoltaic system with simplified configuration, accurate sun tracking and enhanced power generation efficiency can be achieved.

Abstract: The present invention relates to a preparation method for patternization of metal electrodes in silicon solar cells. After disposing an amorphous silicon layer on a silicon substrate processed by diffusion, laser light is projected on the amorphous silicon layer for patternization, and transforming the amorphous silicon with low optical conductivity into polysilicon with high optical conductivity thanks to the recrystallization process of the laser light. Then, after immersing the amorphous silicon layer in plating liquid, metal electrode can be formed accurately at the spots of the amorphous silicon layer patterned by laser light. No external voltage is required; plating reaction is induced by illumination directly.

Abstract: A simple and fast light induced nickel plating method for p-type silicon wafer and n/p silicon solar cell material is revealed. When a n/p solar cell or p-Si semiconductor substrate, which is subjected to metallization with metal contact on the rear side, is immersed in a plating bath, metal ions are reduced on the front surface of semiconductor as soon as illumination starts on the front. The mechanism of nickel plating in this invention is nickel electroplating under the reduction reaction with the use of interfacial potential between the nickel plating bath and the metal surface. It does not need any surface catalytic processing and extra voltage. Instead, it can carry out the nickel deposition on the specific surface with a high nickel plating rate, a simple process and a low production cost.

Abstract: A photovoltaic system able to float on water and track sun includes a floating mechanism; an adjusting mechanism, combining with the floating mechanism; and a solar power mechanism, combining with the adjusting mechanism and located above the floating mechanism. This photovoltaic system can be located on the water surface, and has its floating mechanism to be under water by using the adjusting mechanism and the surrounding water source. The adjusting mechanism can be further used to adjust the solar power mechanism to a specific tilt angle according to the water level of the surrounding water and the sun-tracking angles that varies as the locations of the sun. Therefore, a novel photovoltaic system with simplified configuration, accurate sun tracking and enhanced power generation efficiency can be achieved.

Abstract: Disclosed is a method for making a nickel film for use as an electrode of an n-p diode or solar cell. A light source is used to irradiate an n-type surface of the n-p diode or solar cell, thus producing electron-hole pairs in the n-p diode or solar cell. For the electric field effect at an n-p interface, electrons drift to and therefore accumulate on the n-type surface. With a plating agent, the diode voltage is added to the chemical potential for electroless plating of nickel on the n-type surface. The nickel film can be used as a buffer layer between a contact electrode and the diode or solar cell. The nickel film reduces the contact resistance to prevent a reduced efficiency of the diode or solar cell that would otherwise be caused by diffusion of the atoms of the electrode in following electroplating.

Abstract: A method is disclosed for making a titanium-based compound film of a poly-silicon solar cell. In the method, a ceramic substrate is made of aluminum oxide. The ceramic substrate is coated with a titanium film in an e-gun evaporation system. Dichlorosilane is provided on the titanium film by atmospheric pressure chemical vapor deposition. A titanium-based compound film is formed on the ceramic substrate.

Abstract: A silicon quantum dot fluorescent lamp is made via providing a high voltage source between a cathode assembly and an anode assembly. The cathode assembly is made by providing a first substrate, coating a buffer layer on the first substrate, coating a catalytic layer on the buffer layer and providing a plurality of nanometer discharging elements on the catalytic layer. The anode assembly is made via providing a second substrate, coating a silicon quantum dot fluorescent film on the second substrate with and coating a metal film on the silicon quantum dot fluorescent film.

Abstract: A method is disclosed to make a multi-crystalline silicon film of a solar cell. The method includes the step of providing a ceramic substrate, the step of providing a titanium-based film on the ceramic substrate, the step of providing a p+-type back surface field layer on the titanium-based film, the step of providing a p?-type light-soaking layer on the p+-type back surface field layer and the step of conducting n+-type diffusive deposition of phosphine on the p?-type light-soaking layer based on atmospheric pressure chemical vapor deposition, thus forming an n+-type emitter on the p?-type light-soaking layer.

Abstract: In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light.

Abstract: Dichlorosilane and diborane are deposited on the titanium-based alloy film to grow a p+ type back surface field film. The temperature is raised to grow a p? type light-soaking film on the p+ type back surface field film. Phosphine is deposited on the p? type light-soaking film to form an n+ type emitter. Thus, an n+-p?-p+ laminate is provided on the titanium-based alloy film. SiCNO:Ar plasma is used to passivate the n+-p?-p+ laminate, thus forming an anti-reflection film of SiCN/SiO2 on the n+ type emitter. The n+-p?-p+ laminate is etched in a patterned mask process. A p? type ohmic contact is formed on the titanium-based alloy film. The anti-reflection film is etched in a patterned mask process. The n+ type emitter is coated with a titanium/palladium/silver alloy film that is annealed in hydrogen. An n? type ohmic contact is formed on the n+ type emitter.

Abstract: A method is disclosed for making an anti-reflection film of a solar cell. The method includes the step of providing a laminate. The laminate includes a ceramic substrate, a titanium-based compound film, a p+ type poly-silicon back surface field, a p? type poly-silicon light-soaking film and an n+ type poly-silicon emitter. The laminate is passivated with SiCNO:Ar plasma in a plasma-enhanced vapor deposition device, thus filling the dangling bonds of the silicon atoms at the surface of the n+ type poly-silicon emitter, the dangling bonds of the silicon grains at the grain boundaries of the p? type poly-silicon light-soaking film and the dangling bonds of the silicon atoms in the p+ type poly-silicon back surface field. Finally, the n+ type poly-silicon emitter is coated with an anti-reflection film of SiCN/SiO2.