Abstract: Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.

Abstract: The present disclosure is directed to a wafer drying system and method that detects airborne molecular contaminants in a drying gas as a feedback parameter for a single wafer or multi-wafer drying process. For example, the system comprises a wafer drying station configured to dispense a drying gas over one or more wafers to dry the one or more wafers, a valve configured to divert the drying gas to a first portion and a second portion, and an exhaust line configured to exhaust the first portion of the drying gas. The system further comprises a detector configured to receive the second portion of the drying gas and to determine a real time property of the second portion of the drying gas, and a control unit configured to control a feedback operation of the wafer drying station based on the real time property of the second portion of the drying gas.

Abstract: A high-frequency electronic device including a dielectric substrate, a first patterned metal layer and a second patterned metal layer is provided. The dielectric substrate has a first region and a second region. The first patterned metal layer is disposed on a first side of the dielectric substrate and corresponds to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution. The second patterned metal layer is disposed on the first side or a second side opposite to the first side of the dielectric substrate.

Abstract: A high-frequency electronic device including a dielectric substrate, a first patterned metal layer and a second patterned metal layer is provided. The dielectric substrate has a first region and a second region. The first patterned metal layer is disposed on a first side of the dielectric substrate and corresponds to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution. The second patterned metal layer is disposed on the first side or a second side opposite to the first side of the dielectric substrate.

Abstract: A substrate unit, a display device, and a method for manufacturing the display device are disclosed. The substrate unit includes a carrier plate, a glass substrate and an interlayer disposed between the carrier plate and the glass substrate. The thickness of the glass substrate is less than that of the carrier plate, and the thickness of the interlayer is less than that of the glass substrate. The display device includes a first glass substrate, a second glass substrate, a device layer and a sealing layer. The device layer and the sealing layer are disposed between the first glass substrate and the second glass substrate, wherein the sealing layer, the first glass substrate and the second glass substrate form an enclosed space, and the device layer is disposed in the enclosed space. The thickness of the first glass substrate is between 0.05 mm and 0.3 mm.

Abstract: A substrate unit, a display device, and a method for manufacturing the display device are disclosed. The method for manufacturing the display device includes the steps of: providing a first carrier plate and forming a first interlayer on the first carrier plate; disposing a first glass substrate on the first interlayer to form a first substrate unit; forming a first device layer on the first glass substrate to obtain a first device substrate; providing a second carrier plate and forming a second interlayer on the second carrier plate; disposing a second glass substrate on the second interlayer to form a second substrate unit; combining the first device substrate with the second substrate unit; separating the first glass substrate from the first interlayer; and separating the second glass substrate from the second interlayer to obtain the display device.

Abstract: A high-frequency electronic device including a dielectric substrate, a first patterned metal layer and a second patterned metal layer is provided. The dielectric substrate has a first region and a second region. The first patterned metal layer is disposed on a first side of the dielectric substrate and corresponds to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution. The second patterned metal layer is disposed on the first side or a second side opposite to the first side of the dielectric substrate.

Abstract: An electronic apparatus and a method for manufacturing the same are disclosed. The electronic device of the present invention comprises: a substrate with a first surface and a second surface; an electronic unit layer disposed on the first surface of the substrate; a residue layer disposed on the second surface of the substrate, wherein a material of the residue layer comprises: a compound containing at least one functional group selected from the group consisting of aryl, nitro and ketone.

Abstract: A display device is provided. The display device includes a first substrate, a first barrier layer disposed on the first substrate, a second substrate, a second barrier layer disposed on the second substrate, an display medium disposed between the first barrier layer and the second barrier layer, and a metal enclosing wall connecting the first substrate to the second substrate and surrounding the display medium. The metal enclosing wall includes a first metal layer having a first opening and connected to the first substrate, a second metal layer connected to the second substrate, and a third metal layer formed between the first metal layer and the second metal layer.

Abstract: A substrate unit, a display device, and a method for manufacturing the display device are disclosed. The method for manufacturing the display device includes the steps of: providing a first carrier plate and forming a first interlayer on the first carrier plate; disposing a first glass substrate on the first interlayer to form a first substrate unit; forming a first device layer on the first glass substrate to obtain a first device substrate; providing a second carrier plate and forming a second interlayer on the second carrier plate; disposing a second glass substrate on the second interlayer to form a second substrate unit; combining the first device substrate with the second substrate unit; separating the first glass substrate from the first interlayer; and separating the second glass substrate from the second interlayer to obtain the display device.

Abstract: A method for manufacturing a display is provided. A display including a supporting layer, a flexible layer and a display structure is provided. The display structure has a top side and a bottom side which are opposite to each other. One of the supporting layer and the flexible layer is disposed at the bottom side of the display structure, and the other one of the supporting layer and the flexible layer is disposed at the top side or the bottom side of the display structure. When the supporting layer and the flexible layer are both disposed at the bottom side of the display structure, the flexible layer is located between the supporting layer and the display structure.

Abstract: A display device is provided. The display device includes a first substrate, a first barrier layer disposed on the first substrate, a second substrate, a second barrier layer disposed on the second substrate, an display medium disposed between the first barrier layer and the second barrier layer, and a metal enclosing wall connecting the first substrate to the second substrate and surrounding the display medium. The metal enclosing wall includes a first metal layer having a first opening and connected to the first substrate, a second metal layer connected to the second substrate, and a third metal layer formed between the first metal layer and the second metal layer.

Abstract: An organic light emitting diode display device and a manufacturing method thereof are provided. The organic light emitting diode display device includes a first flexible substrate, a second flexible substrate, a first barrier layer, a second barrier layer, an organic light emitting diode element, and a metal enclosing wall. The first barrier layer is disposed on the first flexible substrate, and the second barrier layer is disposed on the second flexible substrate. The organic light emitting diode element is disposed between the first barrier layer and the second barrier layer. The metal enclosing wall connects the first flexible substrate to the second flexible substrate and surrounds the organic light emitting diode element.

Abstract: An organic light emitting diode display device and a manufacturing method thereof are provided. The organic light emitting diode display device includes a first flexible substrate, a second flexible substrate, a first barrier layer, a second barrier layer, an organic light emitting diode element, and a metal enclosing wall. The first barrier layer is disposed on the first flexible substrate, and the second barrier layer is disposed on the second flexible substrate. The organic light emitting diode element is disposed between the first barrier layer and the second barrier layer. The metal enclosing wall connects the first flexible substrate to the second flexible substrate and surrounds the organic light emitting diode element.

Abstract: A method for manufacturing a display is provided. A display including a supporting layer, a flexible layer and a display structure is provided. The display structure has a top side and a bottom side which are opposite to each other. One of the supporting layer and the flexible layer is disposed at the bottom side of the display structure, and the other one of the supporting layer and the flexible layer is disposed at the top side or the bottom side of the display structure. When the supporting layer and the flexible layer are both disposed at the bottom side of the display structure, the flexible layer is located between the supporting layer and the display structure.

Abstract: An element substrate comprises a flexible substrate, an element layer, a buffer layer and an interface layer. The element layer is disposed on the flexible substrate. The buffer layer is disposed on the flexible substrate. The buffer layer and the element layer are disposed on the opposite sides of the flexible substrate. The interface layer is disposed between the flexible substrate and the buffer layer and includes partial material of both of the flexible substrate and the buffer layer. A display apparatus including the element substrate and a manufacturing method of the element substrate are disclosed.

Abstract: An electronic apparatus and a method for manufacturing the same are disclosed. The electronic device of the present invention comprises: a substrate with a first surface and a second surface; an electronic unit layer disposed on the first surface of the substrate; a residue layer disposed on the second surface of the substrate, wherein a material of the residue layer comprises: a compound containing at least one functional group selected from the group consisting of aryl, nitro and ketone.

Abstract: The present invention provides a method for manufacturing a display panel, comprising the following steps: (A) providing a carrier with a separation layer formed thereon; (B) laminating a glass substrate on the hydrophobic surface of the separation layer to make the separation layer between the carrier and the glass substrate; (C) forming a display unit on the glass substrate; and (D) separating the glass substrate from the carrier and the separation layer to obtain a display panel; wherein the separation layer has a hydrophobic surface with a water contacting angle in a range from 25° to 180°.

Abstract: An organic light emitting diode display device and a manufacturing method thereof are provided. The organic light emitting diode display device includes a first flexible substrate, a second flexible substrate, a first barrier layer, a second barrier layer, an organic light emitting diode element, and a metal enclosing wall. The first barrier layer is disposed on the first flexible substrate, and the second barrier layer is disposed on the second flexible substrate. The organic light emitting diode element is disposed between the first barrier layer and the second barrier layer. The metal enclosing wall connects the first flexible substrate to the second flexible substrate and surrounds the organic light emitting diode element.

Abstract: A thin film transistor substrate, a display apparatus using the same and a manufacturing method thereof are provided. The display apparatus includes a thin film transistor substrate, a top substrate and a display medium layer. The thin film transistor substrate includes a composite plate and several thin film transistors. The composite plate includes a core material structure and two insulation structures. The core material structure includes a metal layer. The two insulation structures are respectively disposed at two sides of the core material structure so as to sandwich the core material structure therebetween. The thin film transistors are disposed on the composite plate. The display medium layer is disposed between the thin film transistor substrate and the top substrate.