Patents by Inventor Wei Yen

Wei Yen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor process
    Patent number: 8426277
    Abstract: A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate and an oxide layer is formed on the substrate without the fin-shaped structure forming thereon. A thermal treatment process is performed to form a melting layer on at least a part of the sidewall of the fin-shaped structure.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: April 23, 2013
    Assignee: United Microelectronics Corp.
    Inventors: Chien-Liang Lin, Shih-Hung Tsai, Chun-Hsien Lin, Te-Lin Sun, Shao-Wei Wang, Ying-Wei Yen, Yu-Ren Wang
  • SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
    Publication number: 20130093064
    Abstract: A semiconductor process includes the following steps. A substrate is provided. A dielectric layer having a high dielectric constant is formed on the substrate, wherein the steps of forming the dielectric layer include: (a) a metallic oxide layer is formed; (b) an annealing process is performed to the metallic oxide layer; and the steps (a) and (b) are performed repeatedly. Otherwise, the present invention further provides a semiconductor structure formed by said semiconductor process.
    Type: Application
    Filed: October 12, 2011
    Publication date: April 18, 2013
    Inventors: Chien-Liang Lin, Shao-Wei Wang, Yu-Ren Wang, Ying-Wei Yen
  • Method and system for controlling movements of objects in a videogame
    Patent number: 8419545
    Abstract: Techniques for controlling movements of an object in a videogame are disclosed. At least one video camera is used at a location where at least a player plays the videogame, the video camera captures various movements of the player. A designated device (e.g., a game console or computer) is configured to the video data to derive the movements of the player from the video data, and cause the object to respond to the movements of the player. When the designated device receives video data from more than one locations, players at the respective locations can play a networked videogame that may be built upon a shared space representing some or all of the real-world spaces of the locations. The video game is embedded with objects, some of which respond to the movements of the players and interact with other objects in accordance with rules of the video games.
    Type: Grant
    Filed: April 26, 2009
    Date of Patent: April 16, 2013
    Assignee: AiLive, Inc.
    Inventors: Wei Yen, Ian Wright, Dana Wilkinson, Xiaoyuan Tu, Stuart Reynolds, William Robert Powers, III, Charles Musick, Jr., John Funge
  • SEMICONDUCTOR PROCESS
    Publication number: 20130078818
    Abstract: A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate and an oxide layer is formed on the substrate without the fin-shaped structure forming thereon. A thermal treatment process is performed to form a melting layer on at least a part of the sidewall of the fin-shaped structure.
    Type: Application
    Filed: September 23, 2011
    Publication date: March 28, 2013
    Inventors: Chien-Liang Lin, Shih-Hung Tsai, Chun-Hsien Lin, Te-Lin Sun, Shao-Wei Wang, Ying-Wei Yen, Yu-Ren Wang
  • Source/drain carbon implant and RTA anneal, pre-SiGe deposition
    Patent number: 8404546
    Abstract: A semiconductor device system, structure, and method of manufacture of a source/drain to retard dopant out-diffusion from a stressor are disclosed. An illustrative embodiment comprises a semiconductor substrate, device, and method to retard sidewall dopant out-diffusion in source/drain regions. A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure. Recessed regions are etched in a portion of the source and drain. Doped stressors are embedded into the recessed regions. A barrier dopant is incorporated into a remaining portion of the source and drain.
    Type: Grant
    Filed: October 14, 2010
    Date of Patent: March 26, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Yen Woon, Chun-Feng Nieh, Ching-Yi Chen, Hsun Chang, Chung-Ru Yang, Li-Te S. Lin
  • Unified Quality of Service Negotiation Method Cross Multi-Media
    Publication number: 20130070595
    Abstract: A method of unified quality of service, hereafter called QoS, negotiation cross multi-media for a first unified terminal device (UTD) using a first medium for communication in a network system is disclosed. The method comprises obtaining a QoS requirement from the first UTD, via the first medium, transmitting the QoS negotiation request including QoS requirement to a second UTD using a second medium for communication in the network system, and when a QoS negotiation response corresponding to the QoS negotiation request is received from the second UTD, reporting a QoS negotiation result to first UTD according to the QoS negotiation response.
    Type: Application
    Filed: September 5, 2012
    Publication date: March 21, 2013
    Inventors: Chia-Wei Yen, JIAN-LI MAO
  • METHOD FOR PROCESSING HIGH-K DIELECTRIC LAYER
    Publication number: 20130072030
    Abstract: A method for processing a high-k dielectric layer includes the following steps. A semiconductor substrate is provided, and a high-k dielectric layer is formed thereon. The high-k dielectric layer has a crystalline temperature. Subsequently, a first annealing process is performed, and a process temperature of the first annealing process is substantially smaller than the crystalline temperature. A second annealing process is performed, and a process temperature of the second annealing process is substantially larger than the crystalline temperature.
    Type: Application
    Filed: September 19, 2011
    Publication date: March 21, 2013
    Inventors: Shao-Wei Wang, Yu-Ren Wang, Chien-Liang Lin, Wen-Yi Teng, Tsuo-Wen Lu, Chih-Chung Chen, Ying-Wei Yen
  • PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING METAL OXIDE SEMICONDUCTOR DEVICE
    Publication number: 20130072028
    Abstract: A process for fabricating a semiconductor device is described. A silicon oxide layer is formed. A nitridation process including at least two steps is performed to nitridate the silicon oxide layer into a silicon oxynitride (SiON) layer. The nitridation process comprises a first nitridation step and a second nitridation step in sequence, wherein the first nitridation step and the second nitridation step are different in the setting of at least one parameter.
    Type: Application
    Filed: September 20, 2011
    Publication date: March 21, 2013
    Applicant: United Microelectronics Corp.
    Inventors: CHIEN-LIANG LIN, Te-Lin Sun, Ying-Wei Yen, Yu-Ren Wang
  • Process for forming repair layer and MOS transistor having repair layer
    Patent number: 8394688
    Abstract: A repair layer forming process includes the following steps. Firstly, a substrate is provided, and a gate structure is formed on the substrate, wherein the gate structure at least includes a gate dielectric layer and a gate conductor layer. Then, a nitridation process is performed to form a nitrogen-containing superficial layer on a sidewall of the gate structure. Then, a thermal oxidation process is performed to convert the nitrogen-containing superficial layer into a repair layer. Moreover, a metal-oxide-semiconductor transistor includes a substrate, a gate dielectric layer, a gate conductor layer and a repair layer. The gate dielectric layer is formed on the substrate. The gate conductor layer is formed on the gate dielectric layer. The repair layer is at least partially formed on a sidewall of the gate conductor layer.
    Type: Grant
    Filed: June 27, 2011
    Date of Patent: March 12, 2013
    Assignee: United Microelectronics Corp.
    Inventors: Chien-Liang Lin, Ying-Wei Yen, Yu-Ren Wang
  • Method of Processing Management Frame and Related Communication Device
    Publication number: 20130044750
    Abstract: A method of processing management frame for a first communication device in a network system is disclosed. The method comprises maintaining a device table including at least an identity of at least a communication device of the network system, and at least a medium access control (MAC) address corresponding to the identity, and determining whether to perform management frame transmission to a second communication device of the network system according to the existence of the identity of the second communication device in the device table.
    Type: Application
    Filed: August 1, 2012
    Publication date: February 21, 2013
    Inventors: Chia-Wei Yen, Jian-Li Mao
  • Method of Processing Device Discovery
    Publication number: 20130044640
    Abstract: A method of processing device discovery for a first communication device in a network system is disclosed. The method comprises generating a discovery management frame including an identity and a medium access control (MAC) address of the first communication device, broadcasting the discovery management frame, and when a response corresponding to the discovery management frame is received from the second communication device, adding an entry with the identity and the MAC address of the second communication device in a device table stored in the first communication device.
    Type: Application
    Filed: August 7, 2012
    Publication date: February 21, 2013
    Inventors: Chia-Wei Yen, JIAN-LI MAO
  • Method of Medium Access Control Type Detection
    Publication number: 20130036209
    Abstract: A method of medium access control (MAC) type detection for a communication device compatible of a plurality of media each conformed to a communication standard in a network system is disclosed. The method comprises generating a library, wherein the library includes at least a character for each medium, configuring a MAC layer of the communication device according to the library, and determining the existence of a medium according to the configuration result.
    Type: Application
    Filed: July 25, 2012
    Publication date: February 7, 2013
    Inventors: Chia-Wei Yen, JIAN-LI MAO
  • Method of Unified Parameter Mapping
    Publication number: 20130034022
    Abstract: A method of unified parameter mapping for a communication device comprising a medium access control (MAC) abstraction sub-layer for converging a plurality of media in a network system is disclosed. The method comprises obtaining a unified parameter and value of the unified parameter from an upper layer of the MAC abstraction sub-layer, and a medium type of a MAC layer underlying the MAC abstraction sub-layer, determining a special parameter for configuration of the medium type of the MAC layer and a format of the special parameter according to the medium type of the MAC layer and the unified parameter, and generating value of the special parameter according to the value of the unified parameter and the format of the special parameter.
    Type: Application
    Filed: July 31, 2012
    Publication date: February 7, 2013
    Inventors: Chia-Wei Yen, JIAN-LI MAO
  • Multi-checkpoint type clustered fruit fly counting device
    Patent number: 8365995
    Abstract: A multi-checkpoint type clustered animal counting device is proposed, which is capable of providing a counting function that can be used for statistically determining the number of animals (such as fruit flies) within a region such as farmland or garden. The proposed animal counting device is characterized by the utilized to at least two object sensors, wherein the first object sensor is disposed at a first checkpoint while the second object sensor is disposed at a second checkpoint, and wherein the first object sensor is initially set to power-on state while the second object sensor is initially set to power-off state and can be switched on only when the first object sensor is triggered. When the second object sensor is triggered, the counting operation will increase the output count number by one. This feature allows a more accurate result and can help save power consumption.
    Type: Grant
    Filed: August 20, 2008
    Date of Patent: February 5, 2013
    Assignee: National Taiwan University
    Inventors: Joe-Air Jiang, En-Cheng Yang, Chwan-Lu Tseng, Chia-Pang Chen, Tzu-Shiang Lin, Yung-Cheng Wu, Chen-Ying Lin, Chu-Ping Tseng, Shih-Hsiang Lin, Chih-Sheng Liao, Shih-Hao Szu, Chung-Wei Yen, Kuang-Chang Lin, Zong-Siou Wu, Fu-Ming Lu
  • SEMICONDUCTOR PROCESS
    Publication number: 20130012012
    Abstract: A semiconductor process includes the following steps. A substrate having an oxide layer thereon is provided. A high temperature process higher than 1000° C. is performed to form a melting layer between the substrate and the oxide layer. A removing process is performed to remove the oxide layer and the melting layer.
    Type: Application
    Filed: July 10, 2011
    Publication date: January 10, 2013
    Inventors: Chien-Liang Lin, Yu-Ren Wang, Ying-Wei Yen, Shao-Wei Wang, Te-Lin Sun, Szu-Hao Lai, Po-Chun Chen, Chih-Hsun Lin, Che-Nan Tsai, Chun-Ling Lin, Chiu-Hsien Yeh
  • AUTO-SELECTING HOLDING CURRENT CIRCUIT
    Publication number: 20130009616
    Abstract: An auto-selecting holding current circuit is applicable to a converter. A primary side of the converter has a Triode for Alternating Current (TRIAC) and a bleeder circuit. The auto-selecting holding current circuit includes a first sensor module, a second sensor module and a reference voltage selecting circuit. The first sensor module detects an input current drop time or an input voltage drop time to output a sense signal. The second sensor module receives a current detector signal and outputs a critical current signal to detect a holding-current value range of the TRIAC. The reference voltage selecting circuit outputs a reference current signal to the bleeder circuit, and the reference current signal corresponds to a holding-current value of the TRIAC. Therefore, the bleeder circuit maintains normal operation of the TRIACs with different holding-current values.
    Type: Application
    Filed: March 1, 2012
    Publication date: January 10, 2013
    Inventors: Lon-Kou Chang, Hsing-Fu Liu, Chang-Yu Wu, Li-Wei Yen
  • Oil pressure sensor
    Patent number: 8347725
    Abstract: An oil pressure includes a housing, a pressure sensing unit mounted in the housing and a first signal generator. Because the pressure sensing unit is provided with a pusher and an elastic piece that is able to uniformly receive a force exerted from the pusher such that the pusher can uniformly drive a swing member of the first signal generator, the oil pressure sensor can output an accurate oil pressure signal.
    Type: Grant
    Filed: February 8, 2011
    Date of Patent: January 8, 2013
    Assignee: Cub Elecparts Inc.
    Inventors: San-Chuan Yu, Yu-Shun Lin, Chih-Wei Yen
  • FABRICATING METHOD OF MOS TRANSISTOR, FIN FIELD-EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF
    Publication number: 20130001707
    Abstract: A fabricating method of a MOS transistor includes the following steps. A substrate is provided. A gate dielectric layer is formed on the substrate. A nitridation process containing nitrogen plasma and helium gas is performed to nitride the gate dielectric layer. A fin field-effect transistor and fabrication method thereof are also provided.
    Type: Application
    Filed: June 30, 2011
    Publication date: January 3, 2013
    Inventors: Chien-Liang Lin, Ying-Wei Yen, Yu-Ren Wang, Chan-Lon Yang, Chin-Cheng Chien, Chun-Yuan Wu, Chih-Chien Liu, Chin-Fu Lin, Teng-Chun Tsai
  • PROCESS FOR FORMING REPAIR LAYER AND MOS TRANSISTOR HAVING REPAIR LAYER
    Publication number: 20120326162
    Abstract: A repair layer forming process includes the following steps. Firstly, a substrate is provided, and a gate structure is formed on the substrate, wherein the gate structure at least includes a gate dielectric layer and a gate conductor layer. Then, a nitridation process is performed to form a nitrogen-containing superficial layer on a sidewall of the gate structure. Then, a thermal oxidation process is performed to convert the nitrogen-containing superficial layer into a repair layer. Moreover, a metal-oxide-semiconductor transistor includes a substrate, a gate dielectric layer, a gate conductor layer and a repair layer. The gate dielectric layer is formed on the substrate. The gate conductor layer is formed on the gate dielectric layer. The repair layer is at least partially formed on a sidewall of the gate conductor layer.
    Type: Application
    Filed: June 27, 2011
    Publication date: December 27, 2012
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chien-Liang LIN, Ying-Wei Yen, Yu-Ren Wang
  • MANUFACTURING METHOD FOR METAL GATE
    Publication number: 20120329261
    Abstract: A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench, and performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function.
    Type: Application
    Filed: June 21, 2011
    Publication date: December 27, 2012
    Inventors: Shao-Wei Wang, Yu-Ren Wang, Chien-Liang Lin, Wen-Yi Teng, Tsuo-Wen Lu, Chih-Chung Chen, Ying-Wei Yen, Yu-Min Lin, Chin-Cheng Chien, Jei-Ming Chen, Chun-Wei Hsu, Chia-Lung Chang, Yi-Ching Wu, Shu-Yen Chan