Patents by Inventor Wei-Yi Hsiao

Wei-Yi Hsiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240128324
    Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.
    Type: Application
    Filed: November 21, 2022
    Publication date: April 18, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Kuo-Chih Lai, Shih-Min Chou, Nien-Ting Ho, Wei-Ming Hsiao, Li-Han Chen, Szu-Yao Yu, Chung-Yi Chiu
  • Patent number: 11957051
    Abstract: An organic semiconductor mixture and an organic optoelectronic device containing the same are provided. A n-type organic semiconductor compound in the organic semiconductor mixture has a novel chemical structure so that the mixture has good thermal stability and property difference during batch production is also minimized. The organic semiconductor mixture is applied to organic optoelectronic devices such as organic photovoltaic devices for providing good energy conversion efficiency while in use.
    Type: Grant
    Filed: March 30, 2023
    Date of Patent: April 9, 2024
    Assignee: RAYNERGY TEK INCORPORATION
    Inventors: Chia-Hua Tsai, Chuang-Yi Liao, Wei-Long Li, Yu-Tang Hsiao
  • Patent number: 11925101
    Abstract: An organic semiconducting compound and an organic photoelectric component containing the same are provided. The organic semiconducting compound has a novel chemical structure to make the organic semiconducting compound have good response to the infrared light. The organic semiconducting compound can be applied to the organic photoelectric components such as organic photodetector (OPD), organic photovoltaic (OPV) cell, and organic field-effect transistor (OFET). Thus, the organic photoelectric components have better light absorption range and photoelectric response while in use.
    Type: Grant
    Filed: September 9, 2022
    Date of Patent: March 5, 2024
    Assignee: RAYNERGY TEK INCORPORATION
    Inventors: Wei-Long Li, Yu-Tang Hsiao, Chia-Hua Tsai, Chuang-Yi Liao
  • Publication number: 20200073595
    Abstract: A method of a flash memory controller connected to a flash memory includes: receiving a data unit from the host via a bust of the host; controlling the flash memory to load a full page data from the flash memory into a buffer of the flash memory; and writing the data unit into the buffer to update or replace a portion data of the full page data stored in the buffer, to control the flash memory write the full page data which has been updated by the data unit from the buffer into the flash memory.
    Type: Application
    Filed: September 2, 2018
    Publication date: March 5, 2020
    Inventors: Hsu-Ping Ou, Wei-Yi Hsiao
  • Patent number: 10528263
    Abstract: The present invention provides a data storage device including a flash memory and a controller. The controller writes the first data sector into a first physical page of the physical pages in response to a write command arranged to write a first data sector into a first logical page, records the mapping relationship of the first logical page and the first physical page in a first large-data-maintenance table and determines whether a small-data-maintenance table has a first data link of the first logical page when one of the large-data-maintenance tables is the first large-data-maintenance table corresponding to the first logical block and the first data sector is less than a predetermined length, and deletes the first data link of the small-data-maintenance table when the small-data-maintenance table has the first data link of the first logical page.
    Type: Grant
    Filed: July 20, 2016
    Date of Patent: January 7, 2020
    Assignee: SILICON MOTION, INC.
    Inventor: Wei-Yi Hsiao
  • Publication number: 20170075575
    Abstract: The present invention provides a data storage device including a flash memory and a controller. The controller writes the first data sector into a first physical page of the physical pages in response to a write command arranged to write a first data sector into a first logical page, records the mapping relationship of the first logical page and the first physical page in a first large-data-maintenance table and determines whether a small-data-maintenance table has a first data link of the first logical page when one of the large-data-maintenance tables is the first large-data-maintenance table corresponding to the first logical block and the first data sector is less than a predetermined length, and deletes the first data link of the small-data-maintenance table when the small-data-maintenance table has the first data link of the first logical page.
    Type: Application
    Filed: July 20, 2016
    Publication date: March 16, 2017
    Inventor: Wei-Yi HSIAO
  • Patent number: 9405485
    Abstract: The system and apparatus for managing flash memory data includes a host transmitting data, wherein when the data transmitted from the host have a first time transmission trait and the address for the data indicates a temporary address, temporary data are retrieved from the temporary address to an external buffer. A writing command is then executed and the temporary data having a destination address are written to a flash memory buffer. When the flash memory buffer is not full, the buffer data are written into a temporary block of the flash memory. The writing of buffer data into the temporary block includes using an address changing command, or executing a writing command to rewrite the external buffer data to the flash memory buffer so that the data are written into the temporary block.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: August 2, 2016
    Assignee: SILICONMOTION INC.
    Inventors: Chun-Kun Lee, Wei-Yi Hsiao
  • Patent number: 9075707
    Abstract: The invention provides a data writing method for a memory. In one embodiment, the memory comprises a data area and a spare area, the data area comprises a plurality of data blocks storing data, and the spare area comprises a plurality of spare blocks having no data stored therein. First, a write command for writing a write data to a first data block of the memory is received from a host. The spare blocks of the spare area are then sorted according to the erase counts of the spare blocks. A first spare block with the least erase counts is then selected from the spare blocks of the spare area. The write data is then written to the first spare block. Data is then erased from the first data block to convert the first data block to a spare block.
    Type: Grant
    Filed: April 18, 2011
    Date of Patent: July 7, 2015
    Assignee: SILICON MOTION, INC.
    Inventor: Wei-Yi Hsiao
  • Publication number: 20140317341
    Abstract: The system and apparatus for managing flash memory data includes a host transmitting data, wherein when the data transmitted from the host have a first time transmission trait and the address for the data indicates a temporary address, temporary data are retrieved from the temporary address to an external buffer. A writing command is then executed and the temporary data having a destination address are written to a flash memory buffer. When the flash memory buffer is not full, the buffer data are written into a temporary block of the flash memory. The writing of buffer data into the temporary block includes using an address changing command, or executing a writing command to rewrite the external buffer data to the flash memory buffer so that the data are written into the temporary block.
    Type: Application
    Filed: June 30, 2014
    Publication date: October 23, 2014
    Inventors: Chun-Kun LEE, Wei-Yi HSIAO
  • Publication number: 20130311713
    Abstract: The system and apparatus for managing flash memory data includes a host transmitting data, wherein when the data transmitted from the host have a first time transmission trait and the address for the data indicates a temporary address, temporary data are retrieved from the temporary address to an external buffer. A writing command is then executed and the temporary data having a destination address are written to a flash memory buffer. When the flash memory buffer is not full, the buffer data are written into a temporary block of the flash memory. The writing of buffer data into the temporary block includes using an address changing command, or executing a writing command to rewrite the external buffer data to the flash memory buffer so that the data are written into the temporary block.
    Type: Application
    Filed: July 23, 2013
    Publication date: November 21, 2013
    Applicant: SILICONMOTION INC.
    Inventors: Chun-Kun LEE, Wei-Yi HSIAO
  • Patent number: 8521971
    Abstract: The system and apparatus for managing flash memory data includes a host transmitting data, wherein when the data transmitted from the host have a first time transmission trait and the address for the data indicates a temporary address, temporary data are retrieved from the temporary address to an external buffer. A writing command is then executed and the temporary data having a destination address are written to a flash memory buffer. When the flash memory buffer is not full, the buffer data are written into a temporary block of the flash memory. The writing of buffer data into the temporary block includes using an address changing command, or executing a writing command to rewrite the external buffer data to the flash memory buffer so that the data are written into the temporary block.
    Type: Grant
    Filed: April 10, 2012
    Date of Patent: August 27, 2013
    Assignee: Siliconmotion Inc.
    Inventors: Chun-Kun Lee, Wei-Yi Hsiao
  • Patent number: 8412893
    Abstract: The invention provides a method for handling data read out from a memory. In one embodiment, a controller corresponding to the memory comprises a ping-pong buffer. First, a first sector read time period required by the memory to read and output a data sector to the ping-pong buffer is calculated. A second sector read time period required by a host to read a data sector from the ping-pong buffer is calculated. A page switch time period required by the memory to switch a target read page is obtained. A total sector number is determined according to the first sector read time period, the second sector read time period, and the page switch time period. When the memory outputs data to the ping-pong buffer, a first buffer and a second buffer of the ping-pong buffer are switched to receive the data output by the memory according to the total sector number.
    Type: Grant
    Filed: June 24, 2010
    Date of Patent: April 2, 2013
    Assignee: Silicon Motion, Inc.
    Inventor: Wei-Yi Hsiao
  • Patent number: 8380920
    Abstract: The invention provides a data access method of a flash memory. First, a write command, a write address, and target data are received from a host. A target block corresponding to the write address is then determined from the flash memory. Whether a storage space corresponding to the write address in the target block has stored data therein is then determined. When the storage space of the target block does not have stored data therein, the target data is written into the storage space of the target block. When the storage space of the target block does have stored data therein, whether a child block mapped to the target block exists in the flash memory is determined. When the child block exists in the flash memory, the target data is written into the child block.
    Type: Grant
    Filed: November 29, 2010
    Date of Patent: February 19, 2013
    Assignee: Silicon Motion, Inc.
    Inventor: Wei-Yi Hsiao
  • Patent number: 8341378
    Abstract: The invention provides a data access method for a flash memory. First, a write command, a write address, and target data are received from a host. A target block corresponding to the write address is then determined. Whether a storage space with the write address in the target block stores data is then determined. When the storage space does not store data, the target data is written to the storage space of the target block. When the storage space stores data, whether a file allocation table (FAT) block mapped to the target block exists in the flash memory is then determined. When the FAT block exists, the target data is written to the FAT block. When the FAT block does not exist, whether a child block mapped to the target block exists in the flash memory is determined. When the child block exists, the target data is written to the child block.
    Type: Grant
    Filed: August 12, 2010
    Date of Patent: December 25, 2012
    Assignee: Silicon Motion, Inc.
    Inventor: Wei-Yi Hsiao
  • Patent number: 8271721
    Abstract: The invention provides a data writing method for a flash memory. First, a write command, a write address, and write data are received from a host. When a total number of block pairs in the flash memory is equal to a threshold value, and execution of the write command increases the total number of block pairs, the write data is written to a data buffer block of the flash memory, and the write address is stored in an address storage table. A target block pair comprising a target mother block and a target child block is then selected from the block pairs for integration. The target mother block and the target child block are integrated into an integrated block during receiving intervals of a plurality of subsequent write commands. Finally, the write command is executed according to the write data stored in the data buffer block and the write address stored in the address storage table.
    Type: Grant
    Filed: May 20, 2010
    Date of Patent: September 18, 2012
    Assignee: Silicon Motion, Inc.
    Inventor: Wei-Yi Hsiao
  • Publication number: 20120198142
    Abstract: The system and apparatus for managing flash memory data includes a host transmitting data, wherein when the data transmitted from the host have a first time transmission trait and the address for the data indicates a temporary address, temporary data are retrieved from the temporary address to an external buffer. A writing command is then executed and the temporary data having a destination address are written to a flash memory buffer. When the flash memory buffer is not full, the buffer data are written into a temporary block of the flash memory. The writing of buffer data into the temporary block includes using an address changing command, or executing a writing command to rewrite the external buffer data to the flash memory buffer so that the data are written into the temporary block.
    Type: Application
    Filed: April 10, 2012
    Publication date: August 2, 2012
    Applicant: SILICONMOTION INC.
    Inventors: Chun-Kun Lee, Wei-Yi Hsiao
  • Patent number: 8219764
    Abstract: The system and apparatus for managing flash memory data includes a host transmitting data, wherein when the data transmitted from the host have a first time transmission trait and the address for the data indicates a temporary address, temporary data are retrieved from the temporary address to an external buffer. A writing command is then executed and the temporary data having a destination address are written to a flash memory buffer. When the flash memory buffer is not full, the buffer data are written into a temporary block of the flash memory. The writing of buffer data into the temporary block includes using an address changing command, or executing a writing command to rewrite the external buffer data to the flash memory buffer so that the data are written into the temporary block.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: July 10, 2012
    Assignee: Siliconmotion Inc.
    Inventors: Chun-Kun Lee, Wei-Yi Hsiao
  • Patent number: 8074012
    Abstract: A data backup method for a flash memory is provided. After writing of data to a plurality of written pages of a first block of a flash memory is completed, a last weak page of the written pages is determined. A first strong page corresponding to the last weak page is then determined. A plurality of strong pages between the first strong page and the last weak page are then determined. Data of the plurality of strong pages is the coped to a backup area of the flash memory for data recovery.
    Type: Grant
    Filed: March 9, 2009
    Date of Patent: December 6, 2011
    Assignee: Silicon Motion, Inc.
    Inventor: Wei-Yi Hsiao
  • Publication number: 20110264847
    Abstract: The invention provides a data writing method for a memory. In one embodiment, the memory comprises a data area and a spare area, the data area comprises a plurality of data blocks storing data, and the spare area comprises a plurality of spare blocks having no data stored therein. First, a write command for writing a write data to a first data block of the memory is received from a host. The spare blocks of the spare area are then sorted according to the erase counts of the spare blocks. A first spare block with the least erase counts is then selected from the spare blocks of the spare area. The write data is then written to the first spare block. Data is then erased from the first data block to convert the first data block to a spare block.
    Type: Application
    Filed: April 18, 2011
    Publication date: October 27, 2011
    Applicant: SILICON MOTION, INC.
    Inventor: Wei-Yi Hsiao
  • Publication number: 20110258369
    Abstract: The invention provides a data writing method for a memory. In one embodiment, the memory comprises a data area and a spare area, the data area comprises a plurality of data blocks storing data, and the spare area comprises a plurality of spare blocks having no data stored therein. First, a write command for writing a write data to a first data block of the flash memory is received from a host. A first spare block with the earliest erase time index is then selected from the spare area. Whether an erase count of the first spare block is less than a first threshold is then determined When the erase count of the first spare block is less than the first threshold, the write data is written to the first spare block. Data is then erased from the first data block to convert the first data block to a spare block.
    Type: Application
    Filed: April 11, 2011
    Publication date: October 20, 2011
    Applicant: SILICON MOTION, INC.
    Inventor: Wei-Yi Hsiao