Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: Disclosed is a semiconductor fabrication method. The method includes forming a gate stack in an area previously occupied by a dummy gate structure; forming a first metal cap layer over the gate stack; forming a first dielectric cap layer over the first metal cap layer; selectively removing a portion of the gate stack and the first metal cap layer while leaving a sidewall portion of the first metal cap layer that extends along a sidewall of the first dielectric cap layer; forming a second metal cap layer over the gate stack and the first metal cap layer wherein a sidewall portion of the second metal cap layer extends further along a sidewall of the first dielectric cap layer; forming a second dielectric cap layer over the second metal cap layer; and flattening a top layer of the first dielectric cap layer and the second dielectric cap layer using planarization operations.

Abstract: A method includes implanting impurities in a semiconductor substrate to form an etch stop region within the semiconductor substrate; forming a transistor structure on a front side of the semiconductor substrate; forming a front-side interconnect structure over the transistor structure; performing a thinning process on a back side of the semiconductor substrate to reduce a thickness of the semiconductor substrate, wherein the thinning process is slowed by the etch stop region; and forming a back-side interconnect structure over the back side of the semiconductor substrate.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes a metal gate structure, over the semiconductor fin, that is sandwiched at least by the first spacers. The semiconductor device includes a gate electrode contacting the metal gate structure. An interface between the metal gate structure and the gate electrode has its side portions extending toward the semiconductor fin with a first distance and a central portion extending toward the semiconductor fin with a second distance, the first distance being substantially less than the second distance.

Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.

Abstract: An immersion cooling system includes a pressure seal tank, an electronic apparatus, a pressure balance pipe and a relief valve. The pressure seal tank is configured to store coolant. A vapor space is formed in the pressure seal tank above the liquid level of the coolant. The electronic apparatus is completely immersed in the coolant. The pressure balance pipe has a gas collection length. The first port of the pressure balance pipe is disposed on the top surface of the pressure seal tank. The relief valve is disposed on the second port of the pressure balance pipe. The second port is farther away from the top surface of the pressure seal tank than the first port. The gas collection length of the pressure equalization tube allows the concentration of vaporized coolant at the first port to be greater than the concentration of vaporized coolant at the second port.

Abstract: A method of exposing a wafer to a high-tilt angle ion beam and an apparatus for performing the same are disclosed. In an embodiment, a method includes forming a patterned mask layer over a wafer, the patterned mask layer including a patterned mask feature; exposing the wafer to an ion beam, a surface of the wafer being tilted at a tilt angle with respect to the ion beam; and moving the wafer along a scan line with respect to the ion beam, a scan angle being defined between the scan line and an axis perpendicular to an axis of the ion beam, a difference between the tilt angle and the scan angle being less than 50°.

Abstract: A computing device can present, within a display, first network-associated content and a tab strip, the first network-associated content being associated with a first content locator, the tab strip including a first content indicator associated with the first content locator and a second content indicator associated with a second content locator, receive a directional input associated with the tab strip, in response to receiving the directional input, modify the presentation of the tab strip, the modification ending presentation of the first content indicator and initiating presentation of a third content indicator, the third content indicator being associated with a third content locator, receive a selection of the third content indicator, and in response to receiving the selection of the third content indicator, present second network-associated content at a location where the first network-associated content was previously presented, the second network-associated content being associated with the third con

Abstract: Disclosures of the present invention describe a double-layer dressing containing silk fibroin and a method for making the same, wherein the double-layer dressing mainly comprises a silk fibroin layer and a calcium-degradation silk fibroin layer connected to the silk fibroin layer, and it is worth emphasizing that, results of animal experiment have proved that this novel double-layer dressing is an outstanding hemostatic wound dressing; Moreover, additional adhesion, resulted from the solidification of tissue fluid, can be effectively prevented from forming between skin wound and wound dressing under the use of this double-layer dressing.

Abstract: A computing device can present, within a display, first network-associated content and a tab strip, the first network-associated content being associated with a first content locator, the tab strip including a first content indicator associated with the first content locator and a second content indicator associated with a second content locator, receive a directional input associated with the tab strip, in response to receiving the directional input, modify the presentation of the tab strip, the modification ending presentation of the first content indicator and initiating presentation of a third content indicator, the third content indicator being associated with a third content locator, receive a selection of the third content indicator, and in response to receiving the selection of the third content indicator, present second network-associated content at a location where the first network-associated content was previously presented, the second network-associated content being associated with the third con

Abstract: Disclosures of the present invention describe a double-layer dressing containing silk fibroin and a method for making the same. The double-layer dressing mainly comprises a silk fibroin layer and a calcium-degradation silk fibroin layer connected to the silk fibroin layer. It is worth emphasizing that, results of animal experiment have proved that this novel double-layer dressing is an outstanding hemostatic wound dressing. Moreover, additional adhesion, resulted from the solidification of tissue fluid, can be effectively prevented from forming between skin wound and wound dressing under the use of this double-layer dressing.

Abstract: A particle feeder is provided for feeding small particles at a uniform low feed rate. In some embodiments, the particle feeder includes a primary reservoir, a secondary reservoir, and a valve. The primary reservoir encloses an internal volume for holding particles and defining a hole through a bottom surface thereof. The valve includes a rod enclosed within and extending through the volume defined by the primary reservoir. The rod is movable between an open position, wherein particles can flow through the hole, and a closed position, wherein the rod blocks the hole. The actuator controls the movement of the rod between the open position and the closed position. The secondary reservoir has an internal volume, and a conduit for connecting the internal volume of the secondary reservoir with the internal volume of primary reservoir, such that particles can flow from the secondary reservoir into the primary reservoir.

Abstract: A method of reducing nitrogen oxide emissions formed during fuel combustion by introducing biomass ash into a combustion chamber.