Abstract: A method for forming the semiconductor device structure is provided. The method includes forming a first metal layer over a substrate and forming a dielectric layer over the first metal layer. The method includes forming an antireflection layer over the dielectric layer, forming a hard mask layer over the antireflection layer and forming a patterned photoresist layer over the hard mask layer. The method includes etching a portion of the antireflection layer by performing a first etching process and etching through the antireflection layer and etching a portion of the dielectric layer by performing a second etching process. The method includes etching through the dielectric layer by performing a third etching process to form a via portion on the first metal layer. The via portion includes a first sidewall and a second sidewall, and the slope of the first sidewall is different from that of the second sidewall.

Abstract: A method for forming the semiconductor device structure is provided. The method includes forming a metal layer in a first dielectric layer over a substrate and forming an etch stop layer over the metal layer. The etch stop layer is made of metal-containing material. The method also includes forming a second dielectric layer over the etch stop layer and removing a portion of the second dielectric layer to expose the etch stop layer and to form a via by an etching process. The method further includes performing a plasma cleaning process on the via and the second dielectric layer, and the plasma cleaning process is performed by using a plasma including nitrogen gas (N2) and hydrogen gas (H2).

Abstract: A method for forming the semiconductor device structure is provided. The method includes forming a first metal layer over a substrate and forming a dielectric layer over the first metal layer. The method includes forming an antireflection layer over the dielectric layer, forming a hard mask layer over the antireflection layer and forming a patterned photoresist layer over the hard mask layer. The method includes etching a portion of the antireflection layer by performing a first etching process and etching through the antireflection layer and etching a portion of the dielectric layer by performing a second etching process. The method includes etching through the dielectric layer by performing a third etching process to form a via portion on the first metal layer. The via portion includes a first sidewall and a second sidewall, and the slope of the first sidewall is different from that of the second sidewall.

Abstract: A method for forming the semiconductor device structure is provided. The method includes forming a metal layer in a first dielectric layer over a substrate and forming an etch stop layer over the metal layer. The etch stop layer is made of metal-containing material. The method also includes forming a second dielectric layer over the etch stop layer and removing a portion of the second dielectric layer to expose the etch stop layer and to form a via by an etching process. The method further includes performing a plasma cleaning process on the via and the second dielectric layer, and the plasma cleaning process is performed by using a plasma including nitrogen gas (N2) and hydrogen gas (H2).

Abstract: A method for forming the semiconductor device structure is provided. The method includes forming a first metal layer over a substrate and forming a dielectric layer over the first metal layer. The method includes forming an antireflection layer over the dielectric layer, forming a hard mask layer over the antireflection layer and forming a patterned photoresist layer over the hard mask layer. The method includes etching a portion of the antireflection layer by performing a first etching process and etching through the antireflection layer and etching a portion of the dielectric layer by performing a second etching process. The method includes etching through the dielectric layer by performing a third etching process to form a via portion on the first metal layer. The via portion includes a first sidewall and a second sidewall, and the slope of the first sidewall is different from that of the second sidewall.

Abstract: A method for forming the semiconductor device structure is provided. The method includes forming a first metal layer over a substrate and forming a dielectric layer over the first metal layer. The method includes forming an antireflection layer over the dielectric layer, forming a hard mask layer over the antireflection layer and forming a patterned photoresist layer over the hard mask layer. The method includes etching a portion of the antireflection layer by performing a first etching process and etching through the antireflection layer and etching a portion of the dielectric layer by performing a second etching process. The method includes etching through the dielectric layer by performing a third etching process to form a via portion on the first metal layer. The via portion includes a first sidewall and a second sidewall, and the slope of the first sidewall is different from that of the second sidewall.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a semiconductor substrate. The method includes forming a mask layer over the dielectric layer. The mask layer has an opening exposing a portion of the dielectric layer. The method includes removing the portion of the dielectric layer through the opening to form a recess in the dielectric layer. The method includes removing the mask layer. The method includes performing a plasma cleaning process over the dielectric layer. The plasma cleaning process uses a carbon dioxide-containing gas.