Abstract: A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer.

Abstract: A liquid storage tank includes a housing, a piston located in the housing, a cover, an elastic element, and an outlet pipe. The cover is attached to the housing and has a support post extending toward the piston. The piston, the housing, and the cover define a tank chamber. The tank chamber is filled with cooling liquid. The elastic element is connected with the tank hosing and the piston. The elastic element is free from contact with the cooling liquid. The outlet pipe communicates with the tank chamber. An extension direction of an opening of the outlet pipe is not parallel to a direction of movement of the elastic element. When the cooling liquid is decreased, the piston compressed the tank chamber such that the elastic element is released. The tank chamber is continuously compressed by pairing the elastic element and the piston.

Abstract: A data input device includes a first delay line, a second delay line, a detection circuit, and a processing circuit. The detection circuit is configured to detect whether a first output data output to a system circuit deviates from a first detection range and to generate a first deviation signal in response to that the detection circuit detects the first output data deviates from the first detection range. The processing circuit normally takes a first delayed data delayed by the first delay line as the first output data. In response to that the processing circuit receives that the first deviation signal representing the first delayed data deviates from the first detection range, the processing circuit takes a second delayed data delayed by the second delay line as the first output data after the second adjustable delay magnitude of the second delay line is adjusted.

Abstract: Provided are compounds of Formula (I) and pharmaceutically acceptable salts and compositions thereof, which are useful for treating cancers and related conditions.

Abstract: A heat dissipation apparatus is disclosed. In the dissipation apparatus, a support is mounted to a circuit board, and an assembly opening on a bearing portion in the support is configured to accommodate a heat source on the circuit board. A heat sink is disposed on the bearing portion of the support, and a heat conducting surface of the heat sink can penetrate the assembly opening, to be attached to the heat conducting surface of the heat source. A peak-valley structure in an elastic component is disposed on a mounting surface of the heat sink as a force-applying portion, and two ends of the elastic component exceed an edge of the heat sink and are mounted to the support as mounting portions. At least one elastic component can provide, to the heat sink by using the peak-valley structure, pressure to tightly attach the heat sink to the heat source.

Abstract: Provided are small molecule inhibitors of the KRAS(G12D) mutant oncoprotein having the structural formula: and pharmaceutically acceptable salts and compositions thereof, which are useful for treating cancers and related conditions.

Abstract: A cordycepin-based derived compound with an anti-tumor effect, and a structure of the compound is as shown in formula I; a cordycepin derivative and a pharmaceutical composition thereof provided by the invention have a good anti-tumor proliferation effect; compared with a parent drug, the cordycepin derivative has better affinity to cell membranes, so that a half-life period of in-vivo metabolism of the drug is longer, and in-vivo remaining time of the drug is longer; compared with other nucleoside anti-tumor drugs, the cordycepin derivative and the pharmaceutical composition thereof provided by the invention have wider types and action ranges of tumors, have excellent inhibition effects on a gastric cancer, a pancreatic cancer, a liver cancer, a small cell lung cancer, a colorectal cancer, melanoma, an ovarian cancer and the like, and have lower side effects and better curative effects.

Abstract: Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing precursor into the remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the first fluorine-containing precursor and the sulfur-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.

Abstract: An electronic device including a body and a receptacle connector is provided. The body has a side wall surface, a receptacle slot located at the side wall surface, a waterproof protrusion protruding from the side wall surface, and two gutters located at the side wall surface, where the waterproof protrusion is located above the receptacle slot, and the two gutters are respectively located at two opposite sides of the receptacle slot. The receptacle connector is disposed in the receptacle slot.

Abstract: A method for manufacturing a semiconductor device is described. The method includes the following steps. A low-dimensional material (LDM) layer is formed on a semiconductor substrate, wherein the LDM layer includes sublayers stacked upon one another. A plasma treatment is performed to the LDM layer to transform at least one sublayer into an oxide layer, wherein the plasma treatment is performed under a temperature equivalent to or lower than about 80 degrees Celsius. At least one electrode is disposed over the oxide layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first stacked nanostructure and a second stacked nanostructure formed over a substrate. The semiconductor device structure includes a first gate structure formed over the first stacked nanostructure, and the first gate structure includes a first portion of a gate dielectric layer and a first portion of a filling layer. The semiconductor device structure includes a second gate structure formed over the second stacked nanostructure, and the second gate structure includes a second portion of the gate dielectric layer and a second portion of the filling layer. The semiconductor device structure includes a first isolation layer between the first gate structure and the second gate structure, wherein the first isolation layer has an extending portion which is formed in a recess between the gate dielectric layer and the filling layer.

Abstract: A display device includes a substrate, a first light emitting element, a second light emitting element, and an optical film sheet. The first light emitting element and the second light emitting element are disposed on the substrate. The first light emitting element emits a first light, and the first light has a first wavelength range. The second light emitting element emits a second light, and the second light has a second wavelength range. The optical film sheet is disposed above the first light emitting element and the second light emitting element. The optical film sheet includes a first zone and a second zone. The first zone includes a first cholesteric liquid crystal, and the first cholesteric liquid crystal reflects light in at least the first wavelength range. The second zone includes a second cholesteric liquid crystal, and the second cholesteric liquid crystal reflects light in at least the second wavelength range.

Abstract: In some embodiments, the present disclosure relates to an integrated chip (IC), including a substrate, a first die disposed over the substrate, a metal wire attached to a frontside of the first die, and a first plurality of die stopper bumps disposed along a backside of the first die and configured to control an angle of operation of the first die. The first plurality of die stopper bumps directly contacts a backside surface of the first die.

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

Abstract: Compositions comprising miR-690 and methods of employing the compositions are provided.

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

Abstract: A grill of top projecting and radiating type includes a projection heater, a support connection beam, a base and a grilling pan arranged on the base, wherein the base includes a substrate housing; an upper face of the substrate housing is provided with an oil collection upper housing; a grilling pan rotating motor is arranged in the substrate housing; the center of an upper surface of the grilling pan is low and the periphery thereof is high; a rotary socket pipe is fixedly arranged at the bottom center of the grilling pan; an electric motor shaft of the grilling pan rotating motor passes through the oil collection upper housing from bottom to top, is inserted into the rotary socket pipe and is then connected to the grilling pan to realize the synchronized rotation of the motor shaft and the grilling pan.

Abstract: Molybdenum(0) coordination complexes comprising an arene ligand and one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

Abstract: Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.

Abstract: Molybdenum(0) coordination complexes comprising at least one cycloheptatriene ligand and optionally one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.