Abstract: An oscillating fan control system includes a holder, a stepper motor, a rotating shaft, a shaft encoder, and a controller. The controller is electrically coupled to the stepper motor and the shaft encoder. The shaft encoder can generate a status signal corresponding to a rotation path of the rotating shaft. The controller includes a reversing circuit and a driving circuit. The reversing circuit can generate a reversing signal for the stepper motor in response to the status signal indicating a deviation of the rotating shaft from a midpoint position of the rotation path. The driving circuit can generate pulse signals for the stepper motor according to a subdivision parameter and an oscillation angle. A method for controlling an oscillating fan is also disclosed.

Abstract: Embodiments of the present disclosure are directed to selective etching processes. The processes include flowing a precursor comprising one or more of an interhalogen, a halogen-containing species, a pseudohalogen species, a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species and an amine or a phosphine, or a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species with a sulfur-containing species, into a semiconductor processing chamber containing a substrate, and forming an activated species of the precursor to etch a substrate. The substrate has a plurality of alternating layers of silicon oxide and silicon nitride thereon and a trench formed through the plurality of alternating layers. The silicon nitride layers are selectively etched relative to the silicon oxide layers at an etch selectivity of greater than or equal to 500:1.

Abstract: Embodiments disclosed herein include a method of dry developing a metal-oxide photoresist. In an embodiment, a method of patterning a metal-oxide photoresist, such as a Sn-based photoresist, includes depositing the metal-oxide photoresist over a substrate, exposing the metal-oxide photoresist with an extreme ultra-violet (EUV) exposure to form exposed regions and non-exposed regions, and developing the exposed metal-oxide photoresist using an electron-donor ligand-based dry etch process.

Abstract: Embodiments of the present disclosure are directed to selective etching processes. The processes include an etching chemistry (a plasma of a fluorine-containing precursor and a first gas mixture), and a passivating chemistry (a plasma of a sulfur-containing precursor and a second gas mixture). In some embodiments, the sulfur-containing precursor and the second gas mixture are present in a ratio of sulfur-containing precursor to second gas mixture in a range of from 0.01 to 5. The methods include etching a substrate having a plurality of alternating layers of silicon oxide and silicon nitride thereon and a trench formed through the plurality of alternating layers. The silicon nitride layers are selectively etched relative to the silicon oxide layers at an etch selectivity of greater than or equal to 500:1.

Abstract: Disclosed are a filter element for liquid filtration and a filter. The filter element includes a ring filter medium, first and second end caps connected to the ring filter medium, and a ventilation assembly, where the ring filter medium has a central cavity formed around a central axis thereof; the ventilation assembly is disposed in the central cavity; and an intercepting ring groove is formed at a ring seal. In this technical solution, a sealing O-ring at a sealing part of the filter element and the housing assembly is replaced with the ring seal with a self-sealing function, which has a better sealing effect under an oil pressure and can reduce a compression amount; and while oil dirt is intercepted, the disassembly of the filter element is not affected, and especially under effective exhaust of the ventilation assembly, the disassembly is more labor-saving.

Abstract: Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

Abstract: The present disclosure provides a phosphazene derivative, a composition for an electrochemical device and an electrochemical device containing the composition The composition includes an electrolyte, a non-aqueous solvent and an additive. The additive includes a phosphazene derivative of the formula (I), n, R1 and R2 are as defined herein: The safety characteristics of the electrochemical device provided in the present disclosure are improved by adding the aforementioned additives to the composition in the electrochemical device.

Abstract: Molybdenum(0) coordination complexes comprising an arene ligand and one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

Abstract: Described herein are compositions comprising microRNAs that can increase insulin sensitivity, reduce obesity, and reduce inflammatory responses associated with obesity.

Abstract: Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.

Abstract: Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

Abstract: A method and device for presenting food information and a computer readable storage medium are provided. The method includes: obtaining a recommended calorie intake of a user; determining a reference portion size of each of multiple food types based on the recommended calorie intake; determining a relative portion size of the reference portion size of each of the food types relative to a reference object; determining a food volume corresponding to the relative portion size of each of the food types according to an object volume of the reference object; and generating a pie chart according to the food volume corresponding to each of the food types.

Abstract: Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.

Abstract: A rotary bearing assembly is disclosed and includes an input shaft, an inner-ring component, an outer-ring component and a load element. The input shaft is configured to combine a rotating shaft of a motor to provide a power input. The inner-ring component includes a gear set, wherein the inner-ring component is sleeved on the input shaft through the gear set and driven by the input shaft. The outer-ring component is sleeved on the inner-ring component through a load element and engaged with the gear set, wherein when the gear set is driven by the input shaft to drive the inner-ring component, the gear set drives the outer-ring component, and the inner-ring component and the outer-ring component are rotated relatively, wherein one of the inner-ring component and the outer-ring component is served to provide a power output, and a rotational speed difference is between the power input and the power output.

Abstract: Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing precursor into the remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the first fluorine-containing precursor and the sulfur-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

Abstract: Compositions comprising miR-690 and methods of employing the compositions are provided.

Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

Abstract: A grill of top projecting and radiating type includes a projection heater, a support connection beam, a base and a grilling pan arranged on the base, wherein the base includes a substrate housing; an upper face of the substrate housing is provided with an oil collection upper housing; a grilling pan rotating motor is arranged in the substrate housing; the center of an upper surface of the grilling pan is low and the periphery thereof is high; a rotary socket pipe is fixedly arranged at the bottom center of the grilling pan; an electric motor shaft of the grilling pan rotating motor passes through the oil collection upper housing from bottom to top, is inserted into the rotary socket pipe and is then connected to the grilling pan to realize the synchronized rotation of the motor shaft and the grilling pan.

Abstract: Molybdenum(0) coordination complexes comprising an arene ligand and one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.