Abstract: A semiconductor processing apparatus includes a wafer chuck configured to hold a wafer on a top surface thereof. A plurality of lift-pin holes vertically extends through a chuck body of the wafer chuck. A plurality of lift pins are located in the plurality of lift-pin holes. A plurality of vacuum seal assemblies is located on a bottom portion of a respective one of the plurality of lift pins. Each vacuum seal assembly within the plurality of vacuum seal assemblies includes a respective set of ring segments that are configured to be assembled into a respective contiguous structure under a condition of an upward gas flow within a respective lift-pin hole selected from the plurality of lift-pin holes. Leaks in a vacuum seal between the wafer and the wafer chuck can be remedied by formation of at least one contiguous structure that provides an additional vacuum seal.

Abstract: Input images are partitioned into non-overlapping segments perpendicular to a disparity dimension of the input images. Each segment includes a contiguous region of pixels spanning from a first edge to a second edge of the image, with the two edges parallel to the disparity dimension. In some aspects, contiguous input image segments are assigned in a “round robin” manner to a set of sub-images. Each pair of input images generates a corresponding pair of sub-image sets. Semi-global matching processes are then performed on pairs of corresponding sub-images generated from each input image. The SGM processes may be run in parallel, reducing an elapsed time to generate respective disparity sub-maps. The disparity sub-maps are then combined to provide a single disparity map of equivalent size to the original two input images.

Abstract: A semiconductor device includes a substrate, an isolation structure on the substrate, a fin protruding from the substrate and through the isolation structure, a gate stack engaging the fin, and a gate spacer on sidewalls of the gate stack. The gate spacer includes an inner sidewall facing the gate stack and an outer sidewall opposing the inner sidewall. The inner sidewall has a first height measured from a top surface of the fin and a bowed structure in a top portion of the inner sidewall. The bowed structure extends towards the gate stack for a first lateral distance measured from a middle point of the inner sidewall. The first lateral distance is less than about 8% of the first height.

Abstract: A method includes providing a structure having a substrate and a fin protruding from the substrate; forming a dummy gate stack over the fin; forming a gate spacer on sidewalls of the dummy gate stack; removing the dummy gate stack using a radical etch process, resulting in a gate trench; and forming a metal gate stack in the gate trench.

Abstract: A method includes providing a structure having a substrate and a fin protruding from the substrate; forming a dummy gate stack over the fin; forming a gate spacer on sidewalls of the dummy gate stack; removing the dummy gate stack using a radical etch process, resulting in a gate trench; and forming a metal gate stack in the gate trench.

Abstract: Input images are partitioned into non-overlapping segments perpendicular to a disparity dimension of the input images. Each segment includes a contiguous region of pixels spanning from a first edge to a second edge of the image, with the two edges parallel to the disparity dimension. In some aspects, contiguous input image segments are assigned in a “round robin” manner to a set of sub-images. Each pair of input images generates a corresponding pair of sub-image sets. Semi-global matching processes are then performed on pairs of corresponding sub-images generated from each input image. The SGM processes may be run in parallel, reducing an elapsed time to generate respective disparity sub-maps. The disparity sub-maps are then combined to provide a single disparity map of equivalent size to the original two input images.