Patents by Inventor Wei Yu Yen
Wei Yu Yen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140367726Abstract: A semiconductor light-emitting device including an epitaxial structure, a first electrode structure, a second electrode structure, a light reflective metal layer, a resistivity-enhancing structure and a protection ring is provided. The light-emitting epitaxial structure has a first surface and a second surface. The light-emitting epitaxial structure has a first zone and a second zone. The first electrode structure is disposed within the first zone. The second electrode structure is disposed within the second zone. The light reflective metal layer is disposed adjacent to the second surface. The resistivity-enhancing structure is disposed in contact with a surface of the light reflective metal layer and corresponding to a position of the first electrode structure. The protection ring has a first portion and a second portion. The first portion surrounds a sidewall of the light reflective metal layer. The second portion corresponds to the second electrode structure.Type: ApplicationFiled: August 29, 2014Publication date: December 18, 2014Inventors: Wei-Yu Yen, Li-Ping Chou, Fu-Bang Chen, Chih-Sung Chang
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Patent number: 8896007Abstract: A semiconductor light-emitting device comprises a light-emitting epitaxial structure, a first electrode structure, a light reflective layer and an resistivity-enhancing structure. The light-emitting epitaxial structure has a first surface and a second surface opposite to the first surface. The first electrode structure is electrically connected to the first surface. The light reflective layer is disposed adjacent to the second surface. The resistivity-enhancing structure is disposed adjacent to the light reflective layer and away from the second surface corresponding to a position of the first electrode structure.Type: GrantFiled: January 7, 2013Date of Patent: November 25, 2014Assignee: High Power Opto, Inc.Inventors: Wei-Yu Yen, Li-Ping Chou, Fu-Bang Chen, Chih-Sung Chang
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Patent number: 8884323Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a buffer layer, a light-emitting layer, a first-conductivity semiconductor layer, a first light reflecting layer, a protective structure, and an adhesive layer. The first-conductivity semiconductor layer is disposed between the buffer layer and a first side of the light-emitting layer. The first light reflecting layer is disposed between the first-conductivity semiconductor layer and the buffer layer. The protective structure is disposed between the first reflecting layer and the buffer layer. The adhesive layer is disposed between the first-conductivity semiconductor layer and the protective structure.Type: GrantFiled: March 28, 2013Date of Patent: November 11, 2014Assignee: High Power Opto. Inc.Inventors: Wei-Yu Yen, Li-Ping Chou, Fu-Bang Chen, Chih-Sung Chang
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Patent number: 8816379Abstract: A reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.Type: GrantFiled: July 10, 2013Date of Patent: August 26, 2014Assignee: High Power Opto, Inc.Inventors: Fu-Bang Chen, Wei-Yu Yen, Li-Ping Chou, Wei-Chun Tseng, Chih-Sung Chang
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Patent number: 8766303Abstract: A light-emitting diode (LED) with a mirror protection layer includes sequentially stacked an N-type electrode, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a P-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer.Type: GrantFiled: August 31, 2012Date of Patent: July 1, 2014Assignee: High Power Opto. Inc.Inventors: Wei-Yu Yen, Li-Ping Chou, Fu-Bang Chen, Chih-Sung Chang
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Patent number: 8754439Abstract: A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion.Type: GrantFiled: December 31, 2012Date of Patent: June 17, 2014Assignee: Epistar CorporationInventors: Jui Hung Yeh, Chun Kai Wang, Wei Yu Yen, Yu Yao Lin, Chien Fu Shen, De Shan Kuo, Ting Chia Ko
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Patent number: 8748928Abstract: A continuous reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding continuous curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding continuous curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.Type: GrantFiled: July 10, 2013Date of Patent: June 10, 2014Assignee: High Power Opto, Inc.Inventors: Fu-Bang Chen, Wei-Yu Yen, Li-Ping Chou, Wei-Chun Tseng, Chih-Sung Chang
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Publication number: 20140151711Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a buffer layer, a light-emitting layer, a first-conductivity semiconductor layer, a first light reflecting layer, a protective structure, and an adhesive layer. The first-conductivity semiconductor layer is disposed between the buffer layer and a first side of the light-emitting layer. The first light reflecting layer is disposed between the first-conductivity semiconductor layer and the buffer layer. The protective structure is disposed between the first reflecting layer and the buffer layer. The adhesive layer is disposed between the first-conductivity semiconductor layer and the protective structure.Type: ApplicationFiled: March 28, 2013Publication date: June 5, 2014Applicant: High Power Opto. Inc.Inventors: Wei-Yu Yen, Li-Ping Chou, Fu-Bang Chen, Chih-Sung Chang
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Patent number: 8716740Abstract: An electrode structure for an LED includes a plurality of blind holes and a plurality of N-type metal electrodes. The LED comprises, in this order by stacking, an intrinsic semiconductor layer, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a mirror layer, a buffer layer, a bonding layer, a permanent substrate and a P-type electrode. The blind holes are distributed in a pattern and run through the intrinsic semiconductor layer to reach the N-type semiconductor layer. The N-type metal electrodes respectively run through the blind holes to connect the N-type semiconductor layer. Through a 3D contact interface formed by the blind hole, not only contact impedance between the N-type metal electrode and the N-type semiconductor layer can be reduced, the N-type metal electrode also can be firmly held in the blind hole without peeling off.Type: GrantFiled: December 21, 2012Date of Patent: May 6, 2014Assignee: Highpower Opto. Inc.Inventors: Wei-Yu Yen, Fu-Bang Chen, Chih-Sung Chang
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Patent number: 8704252Abstract: This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.Type: GrantFiled: October 22, 2009Date of Patent: April 22, 2014Assignee: Epistar CorporationInventors: Chun-Kai Wang, Schang-Jing Hon, Yu-Pin Hsu, Jui-Yi Chu, Hsin-Hsien Wu, Wei-Yu Yen
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Publication number: 20140073075Abstract: A method for separating a light-emitting diode (LED) from a substrate comprises the following steps. First, a substrate is provided which includes a junction surface and a bottom surface far away from the junction surface. Then a plurality holes are formed on the junction surface. An LED structure is further grown on the junction surface, and includes a junction portion bonded to the junction surface. The bottom surface is then polished to be shrunk to communicate with the holes. Finally, the junction portion is etched by an etching liquid via the holes to separate the LED structure from the substrate. Accordingly, by forming the holes, the LED structure and the substrate can be separated through polishing and etching processes, thereby providing a high yield rate as well as reduced production costs.Type: ApplicationFiled: September 12, 2012Publication date: March 13, 2014Inventors: Wei-Yu YEN, Fu-Bang Chen, Chih-Sung Chang
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Publication number: 20140070247Abstract: A semiconductor light-emitting device comprises a light-emitting epitaxial structure, a first electrode structure, a light reflective layer and an resistivity-enhancing structure. The light-emitting epitaxial structure has a first surface and a second surface opposite to the first surface. The first electrode structure is electrically connected to the first surface. The light reflective layer is disposed adjacent to the second surface. The resistivity-enhancing structure is disposed adjacent to the light reflective layer and away from the second surface corresponding to a position of the first electrode structure.Type: ApplicationFiled: January 7, 2013Publication date: March 13, 2014Applicant: HIGH POWER OPTO. INC.Inventors: Wei-Yu Yen, Li-Ping Chou, Fu-Bang Chen, Chih-Sung Chang
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Publication number: 20140061695Abstract: A light-emitting diode (LED) with a mirror protection layer includes sequentially stacked an N-type electrode, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a P-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer. Accordingly, the metal mirror layer can be protected by the protection layer to prevent from oxidation in subsequent processes and to prevent metal deterioration during high-current operations. Thus the metal mirror layer can maintain high reflectivity, thereby increasing light extraction efficiency and electrical stability of the LED.Type: ApplicationFiled: August 31, 2012Publication date: March 6, 2014Inventors: WEI-YU YEN, Li-Ping Chou, Fu-Bang Chen, Chih-Sung Chang
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Publication number: 20130328098Abstract: A buffer layer structure for an LED is provided. The LED includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type electrode that are stacked in sequence. The buffer layer is a composite material, and includes at least one first material and at least one second material that are alternately stacked. The first material and the second material are mutually diffused to generate gradient variation after the buffer layer is processed by a thermal treatment. Thus, an interface effect and thermal stress between difference interfaces are eliminated, and a channel for ion diffusion is blocked for enhancing light-emitting efficiency of the LED.Type: ApplicationFiled: August 13, 2013Publication date: December 12, 2013Applicant: HIGH POWER OPTO. INC.Inventors: Li-Ping Chou, WEI-YU YEN, Fu-Bang Chen, Chih-Sung Chang
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Publication number: 20130307009Abstract: A reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.Type: ApplicationFiled: July 10, 2013Publication date: November 21, 2013Inventors: Fu-Bang Chen, Wei-Yu Yen, Li-Ping Chou, Wei-Chun Tseng, Chih-Sung Chang
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Publication number: 20130307008Abstract: A continuous reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding continuous curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding continuous curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.Type: ApplicationFiled: July 10, 2013Publication date: November 21, 2013Inventors: Fu-Bang Chen, Wei-Yu Yen, Li-Ping Chou, Wei-Chun Tseng, Chih-Sung Chang
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Publication number: 20130307012Abstract: A tension release layer structure is applied to an LED which includes a P-type electrode, a permanent substrate, a binding layer, a tension release layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. The tension release layer is made of a complex material including at least two material elements with boundaries that are blended with each other. As the complex material in the tension release layer does not have apparent interface separation, stress between interface effect and materials can be eliminated to increase light-emitting efficiency and production yield of the LED.Type: ApplicationFiled: May 15, 2012Publication date: November 21, 2013Inventors: Li-Ping Chou, Wei-Yu Yen, Fu-Bang Chen, Chih-Sung Chang
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Publication number: 20130292734Abstract: An electric contact structure adopted for an LED comprises a nitride middle layer and an N-type metal electrode layer. The LED includes an N-type semiconductor layer, a light emission layer and a P-type semiconductor layer that are stacked to form a sandwich structure. The nitride middle layer is patterned and formed on the N-type semiconductor layer. The N-type metal electrode layer is formed on the nitride middle layer and prevented from being damaged by diffusion of the metal ions as the nitride middle layer serves as a blocking interface, thus electric property of the N-type semiconductor layer can be maintained stable. The nitride middle layer would not be softened and condensed due to long-term high temperature, thereby is enhanced adhesion. Moreover, the N-type metal electrode layer further can be prevented from peeling off, hence is increased the lifespan of the LED.Type: ApplicationFiled: May 4, 2012Publication date: November 7, 2013Inventors: Wei-chun TSENG, Wei-Yu Yen, Fu-Bang Chen, Chih-Sung Chang
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Patent number: D729752Type: GrantFiled: June 10, 2014Date of Patent: May 19, 2015Assignee: HIGH POWER OPTO, INC.Inventors: Yi-Chun Chou, Li-Ping Chou, Wei-Yu Yen, Fu-Bang Chen
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Patent number: D730303Type: GrantFiled: June 10, 2014Date of Patent: May 26, 2015Assignee: HIGH POWER OPTO, INC.Inventors: Li-Ping Chou, Yi-Chun Chou, Wei-Yu Yen, Fu-Bang Chen