Patents by Inventor Wei-Zhe Jhang

Wei-Zhe Jhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FinFET devices having gate stacks with protruding parts and method of forming the same
    Patent number: 11056392
    Abstract: A method for forming a FinFET device is described. The method includes the following steps. A substrate is patterned to form fins. Dummy gate stack is formed on the substrate and over the fins, wherein the dummy gate stack may be formed by the following steps: a dummy layer is formed; a first etching step is performed on the dummy layer with a bromine containing etching gas to form a dummy strip; a second etching step is performed on the dummy strip with a chlorine containing etching gas to form the dummy gate stack. The dummy gate stack is replaced with a gate stack.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: July 6, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Chien Li, Wei-Shuo Ho, Huang-Chao Chang, Wei-Zhe Jhang
  • FINFET DEVICES AND METHOD OF FORMING THE SAME
    Publication number: 20190304842
    Abstract: A method for forming a FinFET device is described. The method includes the following steps. A substrate is patterned to form fins. Dummy gate stack is formed on the substrate and over the fins, wherein the dummy gate stack may be formed by the following steps: a dummy layer is formed; a first etching step is performed on the dummy layer with a bromine containing etching gas to form a dummy strip; a second etching step is performed on the dummy strip with a chlorine containing etching gas to form the dummy gate stack. The dummy gate stack is replaced with a gate stack.
    Type: Application
    Filed: March 29, 2018
    Publication date: October 3, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Chien Li, Wei-Shuo Ho, Huang-Chao Chang, Wei-Zhe Jhang