Abstract: Chemical liquid is injected into a tank. A concentration of a first gas dissolved in the chemical liquid is detected. Based on the detected concentration of the first gas, at least one of the first gas and a second gas is injected into the tank to sustain at least one of the concentration of the first gas and a concentration of the second gas in a range of a target value.

Abstract: An integrated system operation method is disclosed that includes the following steps: the film of a substrate is measured by a metrology apparatus to obtain a film information. The substrate is moved from the metrology apparatus to a process apparatus adjacent to the transfer apparatus. The film information is sent to the process apparatus. A film treatment is applied to the substrate in accordance with the film information.

Abstract: A method for forming a semiconductor device structure is provided. The method includes performing a first process over a surface of a semiconductor substrate. The method includes forming a protective layer over the surface of the semiconductor substrate in a first chamber after the first process. The method includes performing a first transferring process to transfer the semiconductor substrate from the first chamber into a substrate carrier. The method includes performing a second transferring process to transfer the semiconductor substrate from the substrate carrier into a second chamber. The semiconductor substrate is located in the substrate carrier during a substantially entire first time interval between the first transferring process and the second transferring process. The method includes removing the substantially entire protective layer in the second chamber. The method includes performing a second process over the surface of the semiconductor substrate.

Abstract: A dispensing method is disclosed that includes the following steps: a cleaning sleeve is provided to surround a spray member. A first fluid is previously dispensed from a first fluid outlet of the spray member. A second fluid is sprayed from a second fluid outlet of the cleaning sleeve to clean the spray member. The cleaning sleeve is opened or slid away from the spray member, such that the first fluid outlet of the spray member is exposed to a substrate. The first fluid is dispensed from the first fluid outlet of the spray member to the substrate.

Abstract: A method for processing a semiconductor wafer is provided. The method includes performing a discharging process over the semiconductor wafer in a discharging chamber which is enclosed. The method further includes processing the semiconductor wafer by use of a first processing module after the discharging process. During the discharging process, charged particles applied on the semiconductor wafer are tuned based on the characteristics of the surface of the semiconductor wafer.

Abstract: A method for processing a semiconductor wafer is provided. The method includes performing a discharging process over the semiconductor wafer in a discharging chamber which is enclosed. The method further includes processing the semiconductor wafer by use of a first processing module after the discharging process. During the discharging process, charged particles applied on the semiconductor wafer are tuned based on the characteristics of the surface of the semiconductor wafer.

Abstract: A method for forming a semiconductor device structure is provided. The method includes performing a first process over a surface of a semiconductor substrate. The method includes forming a protective layer over the surface of the semiconductor substrate in a first chamber after the first process. The method includes performing a first transferring process to transfer the semiconductor substrate from the first chamber into a substrate carrier. The method includes performing a second transferring process to transfer the semiconductor substrate from the substrate carrier into a second chamber. The semiconductor substrate is located in the substrate carrier during a substantially entire first time interval between the first transferring process and the second transferring process. The method includes removing the substantially entire protective layer in the second chamber. The method includes performing a second process over the surface of the semiconductor substrate.

Abstract: A single wafer etching apparatus and various methods implemented in the single wafer etching apparatus are disclosed. In an example, etching a silicon nitride layer in a single wafer etching apparatus includes: heating a phosphoric acid to a first temperature; heating a sulfuric acid to a second temperature; mixing the heated phosphoric acid and the heated sulfuric acid; heating the phosphoric acid/sulfuric acid mixture to a third temperature; and etching the silicon nitride layer with the heated phosphoric acid/sulfuric acid mixture.

Abstract: A dispensing method is disclosed that includes the following steps: a cleaning sleeve is provided to surround a spray member. A first fluid is previously dispensed from a first fluid outlet of the spray member. A second fluid is sprayed from a second fluid outlet of the cleaning sleeve to clean the spray member. The cleaning sleeve is opened or slid away from the spray member, such that the first fluid outlet of the spray member is exposed to a substrate. The first fluid is dispensed from the first fluid outlet of the spray member to the substrate.

Abstract: An integrated system operation method is disclosed that includes the following steps: the film of a substrate is measured by a metrology apparatus to obtain a film information. The substrate is moved from the metrology apparatus to a process apparatus adjacent to the transfer apparatus. The film information is sent to the process apparatus. A film treatment is applied to the substrate in accordance with the film information.

Abstract: A method and apparatus for dispensing a liquid etchant onto a wafer dispenses the liquid etchant onto a wafer using a scanning dispensing nozzle while controlling the dispensing temperature of the etchant in real time as a function of the radial position of the dispensing nozzle over the wafer. The dispensing temperature of the etchant is controlled to enhance the effectiveness of the etchant and thus compensate for the lower etching rate zones in the wafer.

Abstract: A method of fabricating a semiconductor IC is disclosed. The method includes receiving a device. The device includes a semiconductor substrate, a plurality of fins and trenches between fins in the semiconductor substrate. The method also includes filling the trenches with a dielectric material to form shallow trench isolations (STI), applying a low-thermal-budget annealing to the dielectric material, and applying a wet-treatment to the dielectric material.

Abstract: A method of fabricating a semiconductor IC is disclosed. The method includes receiving a device. The device includes a semiconductor substrate, a plurality of fins and trenches between fins in the semiconductor substrate. The method also includes filling the trenches with a dielectric material to form shallow trench isolations (STI), applying a low-thermal-budget annealing to the dielectric material, and applying a wet-treatment to the dielectric material.

Abstract: A method and apparatus for dispensing a liquid etchant onto a wafer dispenses the liquid etchant onto a wafer using a scanning dispensing nozzle while controlling the dispensing temperature of the etchant in real time as a function of the radial position of the dispensing nozzle over the wafer. The dispensing temperature of the etchant is controlled to enhance the effectiveness of the etchant and thus compensate for the lower etching rate zones in the wafer.

Abstract: A single wafer etching apparatus and various methods implemented in the single wafer etching apparatus are disclosed. In an example, etching a silicon nitride layer in a single wafer etching apparatus includes: heating a phosphoric acid to a first temperature; heating a sulfuric acid to a second temperature; mixing the heated phosphoric acid and the heated sulfuric acid; heating the phosphoric acid/sulfuric acid mixture to a third temperature; and etching the silicon nitride layer with the heated phosphoric acid/sulfuric acid mixture.