Patents by Inventor Weibo Yu

Weibo Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200113876
    Abstract: Provided are certain URAT1 inhibitors, pharmaceutical compositions thereof, and methods of use therefor.
    Type: Application
    Filed: December 26, 2016
    Publication date: April 16, 2020
    Inventors: Tonshuang LI, Xingdong ZHAO, Chuiliang YU, Haohan TAN, Xianlong WANG, Rui TAN, BIN LIU, Weipeng ZHANG, Huajie ZHANG, Qihong LIU, Zuwen ZHOU, Zhifu LI, Yue RONG, Jing SUN, Weibo WANG
  • Patent number: 10328060
    Abstract: Provided are certain PI3K inhibitors, pharmaceutical compositions thereof, and methods of use therefor.
    Type: Grant
    Filed: November 1, 2015
    Date of Patent: June 25, 2019
    Assignees: SHANGHAI FOCHON PHARMACEUTICAL CO., LTD., SHANGHAI INSTITUTE OF MATERIA MEDICA CHINESE ACADEMY OF SCIENCES, CHONGQING FOCHON PHARMACEUTICAL CO., LTD.
    Inventors: Xingdong Zhao, Jian Ding, Linghua Meng, Meiyu Geng, Tongshuang Li, Zuwen Zhou, Ling Chen, Qihong Liu, Xianlong Wang, Lijun Yang, Yue Rong, Rui Tan, Chuiliang Yu, Lihua Jiang, Yanxin Liu, Li Linghu, Jing Sun, Weibo Wang
  • Patent number: 10276469
    Abstract: A method for forming a semiconductor device structure is provided. The method includes performing a first process over a surface of a semiconductor substrate. The method includes forming a protective layer over the surface of the semiconductor substrate in a first chamber after the first process. The method includes performing a first transferring process to transfer the semiconductor substrate from the first chamber into a substrate carrier. The method includes performing a second transferring process to transfer the semiconductor substrate from the substrate carrier into a second chamber. The semiconductor substrate is located in the substrate carrier during a substantially entire first time interval between the first transferring process and the second transferring process. The method includes removing the substantially entire protective layer in the second chamber. The method includes performing a second process over the surface of the semiconductor substrate.
    Type: Grant
    Filed: April 17, 2015
    Date of Patent: April 30, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Weibo Yu, Jui-Ping Chuang, Chen-Hsiang Lu, Shao-Yen Ku
  • Patent number: 9776216
    Abstract: A dispensing method is disclosed that includes the following steps: a cleaning sleeve is provided to surround a spray member. A first fluid is previously dispensed from a first fluid outlet of the spray member. A second fluid is sprayed from a second fluid outlet of the cleaning sleeve to clean the spray member. The cleaning sleeve is opened or slid away from the spray member, such that the first fluid outlet of the spray member is exposed to a substrate. The first fluid is dispensed from the first fluid outlet of the spray member to the substrate.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: October 3, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Weibo Yu, Kuo-Sheng Chuang, Wen-Yu Ku, Chin-Hsiang Lin
  • Patent number: 9704714
    Abstract: A method for processing a semiconductor wafer is provided. The method includes performing a discharging process over the semiconductor wafer in a discharging chamber which is enclosed. The method further includes processing the semiconductor wafer by use of a first processing module after the discharging process. During the discharging process, charged particles applied on the semiconductor wafer are tuned based on the characteristics of the surface of the semiconductor wafer.
    Type: Grant
    Filed: April 16, 2015
    Date of Patent: July 11, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Weibo Yu, Jui-Ping Chuang, Chen-Hsiang Lu, Shao-Yen Ku
  • Publication number: 20160307816
    Abstract: A method for forming a semiconductor device structure is provided. The method includes performing a first process over a surface of a semiconductor substrate. The method includes forming a protective layer over the surface of the semiconductor substrate in a first chamber after the first process. The method includes performing a first transferring process to transfer the semiconductor substrate from the first chamber into a substrate carrier. The method includes performing a second transferring process to transfer the semiconductor substrate from the substrate carrier into a second chamber. The semiconductor substrate is located in the substrate carrier during a substantially entire first time interval between the first transferring process and the second transferring process. The method includes removing the substantially entire protective layer in the second chamber. The method includes performing a second process over the surface of the semiconductor substrate.
    Type: Application
    Filed: April 17, 2015
    Publication date: October 20, 2016
    Inventors: Weibo YU, Jui-Ping CHUANG, Chen-Hsiang LU, Shao-Yen KU
  • Publication number: 20160307757
    Abstract: A method for processing a semiconductor wafer is provided. The method includes performing a discharging process over the semiconductor wafer in a discharging chamber which is enclosed. The method further includes processing the semiconductor wafer by use of a first processing module after the discharging process. During the discharging process, charged particles applied on the semiconductor wafer are tuned based on the characteristics of the surface of the semiconductor wafer.
    Type: Application
    Filed: April 16, 2015
    Publication date: October 20, 2016
    Inventors: Weibo YU, Jui-Ping CHUANG, Chen-Hsiang LU, Shao-Yen Ku
  • Patent number: 9355874
    Abstract: A single wafer etching apparatus and various methods implemented in the single wafer etching apparatus are disclosed. In an example, etching a silicon nitride layer in a single wafer etching apparatus includes: heating a phosphoric acid to a first temperature; heating a sulfuric acid to a second temperature; mixing the heated phosphoric acid and the heated sulfuric acid; heating the phosphoric acid/sulfuric acid mixture to a third temperature; and etching the silicon nitride layer with the heated phosphoric acid/sulfuric acid mixture.
    Type: Grant
    Filed: September 24, 2011
    Date of Patent: May 31, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Weibo Yu, Hsueh-Chin Lu, Han-Guan Chew, Kuo Bin Huang, Chao-Cheng Chen, Syun-Ming Jang
  • Publication number: 20150147826
    Abstract: An integrated system operation method is disclosed that includes the following steps: the film of a substrate is measured by a metrology apparatus to obtain a film information. The substrate is moved from the metrology apparatus to a process apparatus adjacent to the transfer apparatus. The film information is sent to the process apparatus. A film treatment is applied to the substrate in accordance with the film information.
    Type: Application
    Filed: November 27, 2013
    Publication date: May 28, 2015
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Weibo Yu, Wen-Yu Ku, Kuo-Sheng Chuang, Chin-Hsiang Lin
  • Publication number: 20150144161
    Abstract: A dispensing method is disclosed that includes the following steps: a cleaning sleeve is provided to surround a spray member. A first fluid is previously dispensed from a first fluid outlet of the spray member. A second fluid is sprayed from a second fluid outlet of the cleaning sleeve to clean the spray member. The cleaning sleeve is opened or slid away from the spray member, such that the first fluid outlet of the spray member is exposed to a substrate. The first fluid is dispensed from the first fluid outlet of the spray member to the substrate.
    Type: Application
    Filed: November 27, 2013
    Publication date: May 28, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Weibo YU, Kuo-Sheng CHUANG, Wen-Yu KU, Chin-Hsiang LIN
  • Patent number: 8932962
    Abstract: A method and apparatus for dispensing a liquid etchant onto a wafer dispenses the liquid etchant onto a wafer using a scanning dispensing nozzle while controlling the dispensing temperature of the etchant in real time as a function of the radial position of the dispensing nozzle over the wafer. The dispensing temperature of the etchant is controlled to enhance the effectiveness of the etchant and thus compensate for the lower etching rate zones in the wafer.
    Type: Grant
    Filed: April 9, 2012
    Date of Patent: January 13, 2015
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Weibo Yu, Kuo Bin Huang, Chao-Cheng Chen, Syun-Ming Jang
  • Patent number: 8735252
    Abstract: A method of fabricating a semiconductor IC is disclosed. The method includes receiving a device. The device includes a semiconductor substrate, a plurality of fins and trenches between fins in the semiconductor substrate. The method also includes filling the trenches with a dielectric material to form shallow trench isolations (STI), applying a low-thermal-budget annealing to the dielectric material, and applying a wet-treatment to the dielectric material.
    Type: Grant
    Filed: June 7, 2012
    Date of Patent: May 27, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Weibo Yu, Ming-Hsi Yeh, Chih-Tang Peng, Hao-Ming Lien, Chao-Cheng Chen, Syun-Ming Jang
  • Publication number: 20130330906
    Abstract: A method of fabricating a semiconductor IC is disclosed. The method includes receiving a device. The device includes a semiconductor substrate, a plurality of fins and trenches between fins in the semiconductor substrate. The method also includes filling the trenches with a dielectric material to form shallow trench isolations (STI), applying a low-thermal-budget annealing to the dielectric material, and applying a wet-treatment to the dielectric material.
    Type: Application
    Filed: June 7, 2012
    Publication date: December 12, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Weibo Yu, Ming-His Yeh, Chih-Tang Peng, Hao-Ming Lien, Chao-Cheng Chen, Syun-Ming Jang
  • Publication number: 20130267099
    Abstract: A method and apparatus for dispensing a liquid etchant onto a wafer dispenses the liquid etchant onto a wafer using a scanning dispensing nozzle while controlling the dispensing temperature of the etchant in real time as a function of the radial position of the dispensing nozzle over the wafer. The dispensing temperature of the etchant is controlled to enhance the effectiveness of the etchant and thus compensate for the lower etching rate zones in the wafer.
    Type: Application
    Filed: April 9, 2012
    Publication date: October 10, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Weibo YU, Kuo Bin HUANG, Chao-Cheng CHEN, Syun-Ming JANG
  • Publication number: 20130078809
    Abstract: A single wafer etching apparatus and various methods implemented in the single wafer etching apparatus are disclosed. In an example, etching a silicon nitride layer in a single wafer etching apparatus includes: heating a phosphoric acid to a first temperature; heating a sulfuric acid to a second temperature; mixing the heated phosphoric acid and the heated sulfuric acid; heating the phosphoric acid/sulfuric acid mixture to a third temperature; and etching the silicon nitride layer with the heated phosphoric acid/sulfuric acid mixture.
    Type: Application
    Filed: September 24, 2011
    Publication date: March 28, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Weibo Yu, Hsueh-Chin Lu, Han-Guan Chew, Kuo Bin Huang, Chao-Cheng Chen, Syun-Ming Jang