Abstract: Provided VCSEL includes emitters arranged in an array disposed on a surface of a substrate, a first passivation layer disposed on a surface of the emitters facing away from the substrate and provided with a first via, a second passivation layer provided with a second via, and a first pad. The first pad includes first sub-pads and at least one second sub-pad, a number of the first sub-pads is equal to a number of the emitters, the first sub-pads are disposed on a side of the first passivation layer facing away from the substrate and connected to the emitters through the first via, the second passivation layer covers the first sub-pads and the first passivation layer, and the at least one second sub-pad is connected to the first sub-pads through the second via.

Abstract: A vertical cavity surface emitting laser includes a substrate, and emitters arranged in an array, where the emitters are located on a surface of the substrate. Each emitter of the emitters is provided with a light emitting window, a via and an oxidation trench, the light emitting window is used for emitting light, the via surrounds the light emitting window, the oxidation trench surrounds the light emitting window, and at least one of the via or the oxidation trench is shared by at least two emitters, thereby reducing the size between emitters in the vertical cavity surface emitting laser.

Abstract: In the manufacturing method of a vertical cavity surface emitting laser, through the same etching process, a first passivation layer located on a side of an N-type ohmic metal layer away from a substrate is etched to form a first via on the side of the N-type ohmic metal layer away from the substrate to expose the N-type ohmic metal layer, and a first passivation layer located on a side of the P-type ohmic contact layer away from the substrate is etched in a mesa structure to form a second via on the side of the P-type ohmic contact layer away from the substrate in the mesa structure to expose the P-type ohmic contact layer.

Abstract: Provided VCSEL including substrate, emitters arranged in m×n array, and first ohmic metal layer. Surface of substrate includes light-emitting regions in array of m rows and n columns and non-light-emitting region surrounding each light-emitting region, m×n?2. Each emitter includes first DBR on surface of substrate, active layer on side of first DBR away from substrate, and second DBR on side of active layer away from substrate, at least part of first DBR disposed in respective light-emitting region, active layer and second DBR disposed in respective light-emitting region. First ohmic metal layer disposed on surface of first DBR away from substrate and disposed in non-light-emitting region, projection of first ohmic metal layer on substrate doesn't overlap projections of first and second connecting lines on substrate, first and second connecting lines respectively connects centers of emitters in same row, connects centers of emitters in same column.