Abstract: Provided are a two-dimensional (2D) metal/semiconductor/metal (MSM) device with non-volatile and linearly tunable optical responsivity based on sulfur vacancy migration and a preparation method thereof. The 2D metal/semiconductor/metal (MSM) device with non-volatile and linearly tunable optical responsivity based on sulfur vacancy migration includes a device base, a source electrode, and a drain electrode; where the MSM device base includes a silicon/silica (Si/SiO2) substrate and a molybdenum sulfide layer which are sequentially stacked; and the source electrode and the drain electrode are located on a surface of the molybdenum sulfide layer.

Abstract: An integrated configurable photodetector with an ultra-high circular polarization extinction ratio and a preparation method therefor are provided. The photodetector includes a metal reflective layer, a dielectric layer, an electrode layer, and a two-dimensional material layer. The electrode layer includes symmetrically arranged Z-shaped metallic optical antenna arrays which are respectively integrated with a source electrode and a drain electrode and have opposite chirality. The photodetector operates at zero bias state, and a photo-response is photovoltaic effect, hot electron injection, photo-thermoelectric effect and so on induced by a Schottky junction composed of the source electrode, the drain electrode and the two-dimensional material.

Abstract: The present application relates to an avalanche infrared detector and a preparation method thereof. In the present application, a homogeneous structure is constructed based on an atomic layer number-dependent energy band structure of a two-dimensional van der Waals material, which can solve problems such as lattice mismatch and defects of the traditional heterojunction avalanche photodetectors and can inhibit the generation of main dark current components such as recombination current and tunneling current by detectors. A “peak” electric field at a stepwise homojunction interface is adopted to enhance a coulomb interaction between carriers, inhibit the hot carrier-phonon coupling, and reduce an energy loss caused by a relaxation process.

Abstract: A short-wave infrared detector unit device and a preparation method therefor are provided, which belongs to the technical field of infrared detectors. A photonic crystal structure layer with multi-coupled topological defects is arranged on a surface of an absorption layer. The photonic crystal structure layer with multi-coupled topological defects is a third dielectric material layer with a through-hole structure. The third dielectric material layer is provided with first through holes in periodic arrangement and second through holes in periodic arrangement. The first through holes are filled with a first dielectric material, and the second through holes are filled with a second dielectric material.

Abstract: The present disclosure provides a momentum-matching and band-alignment van der Waals (vdW) infrared photodetector and a fabrication method thereof. The photodetector includes a substrate, a dielectric layer, a Bi2O2Se layer, a black phosphorus (BP) layer, a metal source and a metal drain. The fabrication method includes: transferring, in a wet manner, the Bi2O2Se layer grown on the mica substrate onto the substrate having the dielectric layer, transferring the mechanically exfoliated BP layer through a micro-region fixed-point transfer device onto the Bi2O2Se layer, and separately fabricating the metal source and the metal drain on the Bi2O2Se layer and the BP layer by processes such as electron beam exposure and electron beam evaporation, thereby forming the momentum-matching and band-alignment vdW infrared photodetector having a vertical structure.

Abstract: The present disclosure relates to an infrared photodetector based on a van der waals heterostructure and a preparation method thereof. The infrared photodetector comprises a fully depleted van der waals heterostructure. The fully depleted van der waals heterostructure comprises a first n-type two-dimensional semiconductor layer, a p-type two-dimensional semiconductor layer, and a second n-type two-dimensional semiconductor layer which are sequentially provided from bottom to top. A fully depleted built-in electric field is formed by means of a sandwich structure including the first n-type two-dimensional semiconductor layer, the p-type two-dimensional semiconductor layer and the second n-type two-dimensional semiconductor layer, which can improve the light absorption efficiency while reducing the dark current of a device, and the separation rate and collection efficiency of photo-induced carriers are accelerated.

Abstract: The present disclosure provides a momentum-matching and band-alignment van der Waals (vdW) infrared photodetector and a fabrication method thereof. The photodetector includes a substrate, a dielectric layer, a Bi2O2Se layer, a black phosphorus (BP) layer, a metal source and a metal drain. The fabrication method includes: transferring, in a wet manner, the Bi2O2Se layer grown on the mica substrate onto the substrate having the dielectric layer, transferring the mechanically exfoliated BP layer through a micro-region fixed-point transfer device onto the Bi2O2Se layer, and separately fabricating the metal source and the metal drain on the Bi2O2Se layer and the BP layer by processes such as electron beam exposure and electron beam evaporation, thereby forming the momentum-matching and band-alignment vdW infrared photodetector having a vertical structure.