Patents by Inventor Wei-Der Chang

Wei-Der Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7420417
    Abstract: A two-port dual-gate field-effect transistor for amplifier applications, wherein a self-bias circuit includes a number of passive elements, such as resistors, diodes and capacitors, is utilized to coupled the output of the amplifier with a second gate of the dual-gate device as a bias source, which transforms the conventional three-port cascade topology into a two-port dual-gate device so as to facilitate device testing, modeling, and packaging for discrete device application. The technology improves the RF performance in conventional two-port single-gate HEMT devices, with slight noise figure degradation.
    Type: Grant
    Filed: June 5, 2006
    Date of Patent: September 2, 2008
    Assignee: Win Semiconductors Corp.
    Inventors: Cheng-Kuo Lin, Wei-Der Chang, Yu-Chi Wang
  • Publication number: 20070290762
    Abstract: A two-port dual-gate field-effect transistor for amplifier applications, wherein a self-bias circuit comprising a number of passive elements, such as resistors, diodes and capacitors, is utilized to coupled the output of the amplifier with a second gate of the dual-gate device as a bias source, which transforms the conventional three-port cascode topology into a two-port dual-gate device so as to facilitate device testing, modeling, and packaging for discrete device application. The technology is for improving the RF performance of conventional two-port single-gate HEMT device, with slightly noise figure degradation. This innovation doesn't require complicated RF testing and modeling as compared with conventional dual-gate devices. The two-port dual-gate device fits packaging molds of conventional two-port discrete device, hence the production line thereof can be easily extended to low noise amplifier and power amplifier applications.
    Type: Application
    Filed: June 5, 2006
    Publication date: December 20, 2007
    Applicant: WIN Semiconductors Corp.
    Inventors: Cheng-Kuo Lin, Wei-Der Chang, Yu-Chi Wang
  • Patent number: 5384158
    Abstract: A method for preparing a magnetic recording medium includes the following steps of providing a substrate; providing a solution consisting essentially of ions of cobalt, manganese and iron in deionized water; and preheating the substrate and spraying the solution onto the preheated substrate at an elevated temperature to uniformly distribute droplets thereon and form a magnetic recording medium film on the subtrate. Such method can prepare a magnetic thin film which has a high recording density and is cost-effective.
    Type: Grant
    Filed: March 24, 1994
    Date of Patent: January 24, 1995
    Assignee: National Science Council
    Inventors: Tsung-Shune Chin, Wei-Der Chang, Ming-Cheng Deng
  • Patent number: 5294312
    Abstract: A method for preparing a magnetic recording medium includes the steps of providing a substrate, providing an alloy composite target attaching thereon Co and Fe pellets to modify the composition of this magnetic recording medium, and utilizing the target to form a (Co,Mn) modified .gamma.-Fe.sub.2 O.sub.3 thin film on the substrate under controlled conditions. Such method can provide a magnetic recording medium which is cost-effective and has a better SNR, a better resistance to corrosion and a high coercivity.
    Type: Grant
    Filed: April 28, 1993
    Date of Patent: March 15, 1994
    Assignee: National Science Council
    Inventors: Tsung-Shune Chin, Wei-Der Chang, Ming-Cheng Deng