Patents by Inventor Weier LU

Weier LU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11264461
    Abstract: Disclosed is a graphene electrochemical transfer method assisted by multiple supporting films, comprising: (1) growing graphene on a substrate, and then spin-coating a thin layer of photoresist on a surface of the graphene as a first film; (2) spin-coating n layers of thick, tough, and selectively dissolvable polymer films on the surface of the first film as an top film; (3) dissociating the multi-layer composite film and the graphene from the surface of the substrate by an electrochemical process, and dissolving the thick polymer films which is the top film with a first solvent; (4) after cleaning, transferring the thin first film and the graphene to a target substrate, and finally dissolving the thin first film away with a second solvent to complete the transfer process. This transfer process is fast, stable, and capable of transferring a large-size graphene, which may promote the large-scale application of graphene.
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: March 1, 2022
    Inventors: Weier Lu, Yang Xia, Lili Zhao, Nan Li
  • Patent number: 10840050
    Abstract: A field emission cathode electron source and an array thereof provided by embodiments of the present disclosure include a substrate, and a cathode, a cathode tip and a gate disposed on the same side of the substrate. The cathode, the cathode tip and the gate are disposed on an upper surface of the substrate, and the cathode tip is connected to the cathode, and the gate is located on a side of the cathode tip away from the cathode and an electron emission end of the cathode tip is directed toward a side of the substrate close to the gate. The cathode tips are arranged on the substrate in parallel with the substrate. Compared with the three dimensional stacked structure in the prior art, the present disclosure has a higher stability and reliability and is suitable for a large-scale integration.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: November 17, 2020
    Assignee: THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES
    Inventors: Weier Lu, Yang Xia
  • Publication number: 20200235212
    Abstract: Disclosed is a graphene electrochemical transfer method assisted by multiple supporting films, comprising: (1) growing graphene on a substrate, and then spin-coating a thin layer of photoresist on a surface of the graphene as a first film; (2) spin-coating n layers of thick, tough, and selectively dissolvable polymer films on the surface of the first film as an top film; (3) dissociating the multi-layer composite film and the graphene from the surface of the substrate by an electrochemical process, and dissolving the thick polymer films which is the top film with a first solvent; (4) after cleaning, transferring the thin first film and the graphene to a target substrate, and finally dissolving the thin first film away with a second solvent to complete the transfer process. This transfer process is fast, stable, and capable of transferring a large-size graphene, which may promote the large-scale application of graphene.
    Type: Application
    Filed: February 28, 2019
    Publication date: July 23, 2020
    Inventors: Weier LU, Yang XIA, Lili ZHAO, Nan LI
  • Publication number: 20200219693
    Abstract: A field emission cathode electron source and an array thereof provided by embodiments of the present disclosure include a substrate, and a cathode, a cathode tip and a gate disposed on the same side of the substrate. The cathode, the cathode tip and the gate are disposed on an upper surface of the substrate, and the cathode tip is connected to the cathode, and the gate is located on, a side of the cathode tip away from the cathode and an electron emission end of the cathode tip is directed toward a side of the substrate close to the gate. The cathode tips are arranged on the substrate in parallel with the substrate. Compared with the three dimensional stacked structure in the prior art, the present disclosure has a higher stability and reliability and is suitable for a large-scale integration.
    Type: Application
    Filed: February 25, 2019
    Publication date: July 9, 2020
    Inventors: Weier LU, Yang XIA