Abstract: The invention discloses a Nine-Degree-of-Freedom Intelligent Construction Platform (Nine-DOF Intelligent Construction Platform), comprising a Mobile Vehicle Module, an Extended Carrier Module, a Robotic Arm, and a Lifting Platform Module. The Extended Carrier Module is assembled with the Mobile Vehicle Module along the translation direction. The Robotic Arm is assembled directly on the Mobile Vehicle Module or via the Lifting Platform Module. The invention utilizes a modular assembly approach. The Mobile Vehicle Module and the Extended Carrier Module accomplish autonomous movement and expand the range of precise positioning motion of the Robotic Arm. The Lifting Platform Module achieves lifting to provide more degrees of freedom for construction. Along with the modules, the Platform can meet the requirements of construction flexibility, real-time mobility, and positioning accuracy at the same time.

Abstract: The invention provides a correction and compensation method in a semiconductor manufacturing process. The method includes the following steps: providing a machine, the machine is at least used for exposure manufacturing of a first product and a second product, performing period maintenance (PM) on the machine, recording an original offset map before and after the period maintenance of the machine is performed, the original offset map has an original exposure size, and adjusting the original exposure size of the original offset map to correspond to a first exposure size of the first product, and performing a first offset compensation correction on the first product. And adjusting the original exposure size of the original offset map to correspond to a second exposure size of the second product, and performing a second offset compensation correction on the second product.

Abstract: A manufacturing method of a contact structure includes the following steps. A substrate is provided, and the substrate includes a first region and a second region. A dielectric layer is formed on the substrate. A photoresist layer is formed on the dielectric layer. An exposure process is performed. The exposure process includes first exposure steps and second exposure steps. Each of the first exposure steps is performed to a part of the first region of the substrate. Each of the second exposure steps is performed to a part of the second region of the substrate. Each of the second exposure steps is performed with a first overlay shift by a first predetermined distance. A develop process is performed for forming openings in the photoresist layer.

Abstract: A manufacturing method of a contact structure includes the following steps. A substrate is provided, and the substrate includes a first region and a second region. A dielectric layer is formed on the substrate. A photoresist layer is formed on the dielectric layer. An exposure process is performed. The exposure process includes first exposure steps and second exposure steps. Each of the first exposure steps is performed to a part of the first region of the substrate. Each of the second exposure steps is performed to a part of the second region of the substrate. Each of the second exposure steps is performed with a first overlay shift by a first predetermined distance. A develop process is performed for forming openings in the photoresist layer.

Abstract: The present invention provides a preparation method of fluoromethyl 1,1,1,3,3,3-hexafluoroisopropyl ether by reacting CH2FX with 1,1,1,3,3,3-hexafluoroisopropanol in the presence of acid-binding agent. The reaction can be also preformed in the presence of solvent and/or phase-transfer catalyst. The present method has the advantages of simple reaction, manageable control condition, high material conversion and product yield, and the product can be easily separated. The obtained fluoromethyl 1,1,1,3,3,3-hexafluoroisoprophyl ether can be used as a safe inhalation anesthetics.