Abstract: Provided is a method for retrieving a lost-of-contact mobile terminal. The method is applied to a first control terminal, and includes: receiving a first lost-of-contact distress signal a first mobile terminal forwarded by a server; displaying a help seeking interface; sending, in response to a help-retrieving instruction, a first help-retrieving request to the server; and receiving a first confirmation help message from a second control terminal from the server, wherein the first confirmation help message indicates that the second control terminal agrees to help retrieve the first mobile terminal.

Abstract: The present disclosure provides a combined vaccine against human respiratory syncytial virus (RSV) infection and a method thereof for inducing immune response. The combined vaccine includes; a first composition including an immunologically effective dosage of a replication-deficient human adenovirus type 26 vector contains a nucleotide encoding an antigenic protein of RSV and a pharmaceutically acceptable vector; and a second composition including an immunologically effective dosage of a replication-deficient chimpanzee adenovirus type 63 vector contains a nucleotide encoding an antigenic protein of RSV and a pharmaceutically acceptable vector. The first composition is a primary immunization composition and the second composition is a booster immunization composition, or vice versa. In the present disclosure, the combined vaccine is used for inducing a protective immunity against RSV infection, and a method is provided for generating the protective immunity against RSV infection.

Abstract: Provided is a method for processing video data. The method includes: acquiring a second outline of at least one object in an (n+1)th image frame of a to-be-compressed video data group based on a fuzzy algorithm; determining a motion vector of the at least one object according to the second outline and a first outline of the at least one object in an nth image frame of the to-be-compressed video data group; acquiring compressed video data according to the motion vector and a start image frame of to-be-compressed video data; and sending the compressed video data to an apparatus for displaying images.

Abstract: Provided are a mixed reality display method, a mixed reality device, and a storage medium. The method includes: after receiving a mixed display signal, tracking the eyeballs of a user by means of an eyeball tracker, and determining a gaze point of the user on a display screen; determining, according to a correspondence between the gaze point and a sub-display region in the display screen, the sub-display region the user gazes; determining at least one first image sensor according to a correspondence between the sub-display region and an image sensor in an image sensor array, and adjusting the at least one first image sensor; and superimposing and rendering an environment image output by the image sensor array and a virtual image, and obtaining and displaying an MR image.

Abstract: A control method for display switching, an electronic device, and a storage medium are provided. The control method for display switching includes: establishing a first buffer and a second buffer at a kernel layer and initializing the first buffer; establishing a first service process and a second service process at a user layer, and controlling the first service process to render a first image according to a display parameter of a first buffer and transmit it to a display screen via the first buffer for display; and initializing the second buffer according to a switching instruction, and controlling the second service process to render a second image according to a display parameter of the second buffer and transmit it to the display screen via the second buffer so as to make the display screen switch to displaying the second image.

Abstract: A micro light-emitting diode (LED) includes an n-type layer, a transitional unit, a light-emitting unit disposed on the transitional unit, and a p-type layer disposed on the light-emitting unit. The transitional unit includes a first transitional layer, a second transitional layer and a third transitional layer that are sequentially disposed on the n-type layer in such order. The n-type layer, the first transitional layer, the second transitional layer, the third transitional layer and the light-emitting unit respectively have a bandgap of Egn, a bandgap of Eg1, a bandgap of Eg2, a bandgap of Eg3 and a bandgap of Ega which satisfy a relationship of Egn?Eg1>Eg2>Eg3>Ega.

Abstract: A light-emitting structure includes an n-type layer, an active layer, and a p-type layer. The active layer has N quantum well structure periods, each of the N quantum-well structure periods has a well layer and at least one barrier layer. The N quantum-well structure periods include a first light-emitting section and a second light-emitting section. The first light-emitting section is closer to the n-type layer than the second light-emitting section. A method for producing the light-emitting structure, and a light-emitting device that has the light-emitting structure are also disclosed.

Abstract: A control method for display switching, an electronic device, and a storage medium are provided. The control method for display switching includes: establishing a first buffer and a second buffer at a kernel layer and initializing the first buffer; establishing a first service process and a second service process at a user layer, and controlling the first service process to render a first image according to a display parameter of a first buffer and transmit it to a display screen via the first buffer for display; and initializing the second buffer according to a switching instruction, and controlling the second service process to render a second image according to a display parameter of the second buffer and transmit it to the display screen via the second buffer so as to make the display screen switch to displaying the second image.

Abstract: A nitride light emitting diode includes: an n-type nitride layer, a light emitting layer and a p-type nitride layer in sequence, wherein, the light emitting layer is a MQW structure composed of a barrier layer and a well layer, in which, an AlGaN electron tunneling layer is inserted into at least one well layer closing to the n-type nitride layer with barrier height greater than that of the barrier layer; in addition, the barriers of the AlGaN electron tunneling layer and the well layer are high enough so that electrons are difficult to transit towards thermionic emission direction, but mainly transit through tunneling in the InGaN well layers, which confines electron mobility and adjusts electron distribution. Hence, electrons have less chance to spill over into the P-type nitride layer.

Abstract: A light emitting diode (LED) includes quantum dots serving as the quantum well layer in the multiple-quantum well (MQW) structure, which can greatly improve the combination efficiency of electrons and holes due to quantum confinement effect; a nanoscale metal reflective layer is formed between the quantum barrier layer with nanoscale pits to instantly reflect the light emitted downwards from the MQW to the front of epitaxial structure; in addition, the nanoscale metal reflective layer can form surface plasmon to further improve light emitting efficiency.

Abstract: A nitride layer with embedded hole structure can be used for fabricating GaN-based LED of high external quantum efficiency through epitaxial growth. The approaches can have advantages such as reducing the complexity chip process for forming hole structure, reducing impacts from the chip process on chip reliability, effective reduction of hole structure size and increase of device stability, crush resistance, and reliability. A fabrication method of an underlayer structure with embedded micro-hole structure is also provided.

Abstract: A nitride layer with embedded hole structure can be used for fabricating GaN-based LED of high external quantum efficiency through epitaxial growth. The approaches can have advantages such as reducing the complexity chip process for forming hole structure, reducing impacts from the chip process on chip reliability, effective reduction of hole structure size and increase of device stability, crush resistance, and reliability. A fabrication method of an underlayer structure with embedded micro-hole structure is also provided.