Abstract: The present application discloses a manufacturing method for a display module and a display screen. The method includes: forming a semiconductor device by pre-processing a semiconductor epitaxial wafer; forming a first transparent layer on a substrate surface of the semiconductor device; forming a first opening exposing the substrate by etching the first transparent layer; forming a first quantum dot layer on the substrate surface exposed by the first opening and the surface of the first transparent layer; etching away the first quantum dot layer in the outer region of the first opening, and remaining the first quantum dot layer inside the first opening; and forming a DBR film layer that filters blue light.

Abstract: An image processing method and device, a camera apparatus and a storage medium are provided. The image processing method includes: acquiring an initial image, and the initial image corresponds to an RGB data format; dividing the initial image into a plurality of image blocks; converting each image block in the plurality of image blocks from the RGB data format into a YUV data format, wherein Y is a luminance value, and U and V are chromatic value; inverting a luminance value Y of a target image block into a darkness value D, and the target image block is at least one of the plurality of image blocks; coding DUV data of the target image block and YUV data of a non-inverted image block so as to obtain target image data of the initial image.

Abstract: The invention discloses a MOS transistor for suppressing generation of a photo-induced leakage current in an active channel region, and an application thereof. A fabrication process comprises: forming a source and a drain at both ends of a substrate by ion implantation, fabricating a gate oxide layer in a middle of an upper surface of the substrate; depositing a polysilicon or a metal on the gate oxide layer to form a gate; depositing an isolation layer above the gate, the source, and the drain; etching contact holes above the source and the drain to extract the source and the drain; depositing the metal on the contact holes above the source and the drain; etching the metal on the drain to isolate the source from the drain; and enabling the metal on the source to directly extend to cover the active channel region, so as to block light rays.