Abstract: The present application discloses a doped metal oxide semiconductor which is an indium tin oxide or indium tin zinc oxide semiconductor doped with a rare earth oxide. Even at a small doping amount, the oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also discloses the thin-film transistors made thereof the doped metal oxide semiconductor and its application.

Abstract: An electronic device, pertaining to the field of communications technologies are provided. The electronic device includes: a display bracket; a speaker bracket, where the speaker bracket is disposed on the display bracket; a speaker, where the speaker is disposed on the speaker bracket, and the speaker is located on a side of the speaker bracket back away from the display bracket; and a main board bracket, where the main board bracket is connected to the display bracket, and the speaker bracket and the speaker are both located between the display bracket and the main board bracket. The speaker bracket, the speaker, and the main board bracket jointly create a closed rear cavity.

Abstract: An electronic device includes a cover plate; a circuit board, provided with a first through hole; a microphone, where a sound pickup hole of the microphone faces the first through hole; a middle frame, including a body portion for forming a sidewall of the electronic device and a connecting portion extending from the body portion into the electronic device. The connecting portion is in contact with a side of the circuit board facing away from the microphone, and is provided with a second through hole that faces the first through hole, the cover plate and the connecting portion overlap, a first channel is arranged between the cover plate and the body portion, a second channel is arranged between the cover plate and the connecting portion; and the first through hole, the second through hole, the second channel, and the first channel are in communication and form a sound guide channel.

Abstract: The present application discloses an oxide semiconductor thin-film and a thin-film transistor consisted thereof. The oxide semiconductor thin-film is fabricated by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor. The thin-film transistor comprising a gate electrode, a channel layer consisted by the oxide semiconductor thin-film, a source and drain electrode; the thin-film transistor employing etch-stop structure, a back-channel etch structure or a top-gate self-alignment structure.

Abstract: The present application discloses a composite metal oxide semiconductor which is a metal oxide semiconductor doped with a rare earth oxide. Even doping the praseodymium oxide or ytterbium oxide at a small doping amount, oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also disclose the thin-film transistors made thereof the composite metal oxide semiconductor and its application.

Abstract: The present application discloses a doped metal oxide semiconductor which is an indium tin oxide or indium tin zinc oxide semiconductor doped with a rare earth oxide. Even at a small doping amount, the oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also discloses the thin-film transistors made thereof the doped metal oxide semiconductor and its application.

Abstract: The present application discloses an oxide semiconductor thin-film and a thin-film transistor consisted thereof. The oxide semiconductor thin-film is fabricated by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor. The thin-film transistor comprising a gate electrode, a channel layer consisted by the oxide semiconductor thin-film, a source and drain electrode; the thin-film transistor employing etch-stop structure, a back-channel etch structure or a top-gate self-alignment structure.