Abstract: A capture ring is provided. The capture ring has a top surface and a bottom surface. A support surface is located at the inner periphery of the capture ring parallel to the top surface for supporting a wafer. An inside diameter lead angle is located between the top surface and the support surface. There is an included angle between the inside diameter lead angle and a normal line of the support surface, wherein the included angle is more than 30 degrees but less than or equal to 90 degrees. Because the foregoing included angle is more than 30 degrees but less than or equal to 90 degrees, the refraction and reflecting area of plasma inside an etching machine will be increased. Therefore, the wafer bevel flake type defect size can be controlled and the wafer bevel defect count can be reduced.